• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.16-19
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• 2017

For the economical and environmental-friendly fabrication of polisher, Mo mask layer were sputtered on glass substrate instead of Cr mask material. Mo mask layers were sputtered by pulsed-DC sputtering and Photoresist patterns were formed on Mo mask layer for different develop times and optimized. After Mo mask layer were patterned and exposed glass was wet etched by HF solution for different etching times, the remaining Mo mask was stripped by using Al etchant. Develop time of 30 sec and HF wet etching time of 3 min were selected as optimized process condition and applied to the fabrication of polisher.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.129-131
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• 2004

극자외선 리소그래피(EUV lithography) 기술은 50nm 이하의 선폭을 가지는 차세대 소자 제작에 있어서 선도적인 기술 중 하나이다. EUVL 에서 필수적인 요소중의 하나가 mirror 로 사용되는 blank mask 이다. Blank mask 에 있어서 가장 중요한 요소는 반사도이다. 이 blank mask 는 Si substrate 위에 반사를 위한 Mo/Si pair 가 40pair 이상 적층되어있다. Blank mask 는 매우 청결해야한다. 만약 결함이 있다면 blank mask 에는 치명적이다 결함은 blank mask 에 있어서 반사도를 떨어뜨리는 주 요소이기 때문이다. 그 결함에는 amplitude defect 과 phase defect 이 있다. FIB 에서는 amplitude defect 을 수정하는 것이 가능하다. 우리는 FIB 를 이용하여 mage mode, spot mode, bar rotation mode 를 사용하여 amplitude defect을 수정하였다. 그리고, 그 결과 효과적으로 amplitude defect을 수정하였다.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.34-42
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• 2021

Recent cleaning technologies of mask in extremely ultraviolet semiconductor processes were reviewed, focused on newly developed issues such as particle size determination or hydrocarbon and tin contaminations. In detail, critical particle size was defined and proposed for mask cleaning where nanosized particles and its various shapes would result in surface atomic ratio increase vigorously. A new cleaning model also was proposed with amphoteric behavior of electrolytically ionized water which had already shown excellent particle removing efficiency. Having its non-equilibrium and amphoteric properties, electrolyzed ion water seemed to oxidize contaminant surface selectively in nano-scale and then to lift up oxidized ones from mask surface very effectively. This assumption should be further investigated in future in junction with hydrogen bonding and cluster of water molecules.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Journal of Broadcast Engineering
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• v.18 no.3
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• pp.474-480
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• 2013

In orthogonal frequency division multiplexing system (OFDM), rapid channel variation caused by fast moving receiver leads to a loss of subcarrier orthogonality which results in inter-carrier interference (ICI) and receiver performance degradation. In conventional receivers, performance is enhanced by estimating ICI and removing it from received signals. In this paper, an ICI reduction scheme using a time-domain mask and adding is proposed. The proposed scheme is applied to DVB-T receiver to prove the Doppler mobile performance enhancement.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3276-3278
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• 1999

LIGA 기술을 제품의 대량생산에 적용하기 위해서는 한번에 넓은 면적을 노광할 수 있는 X-ray 마스크가 요구된다. 기존에 널리 사용되고 있는 SiN 멤브레인 마스크는 내구성이 좋지 않고 면적을 크게하기 어렵다. 따라서 본 연구에서는 이러한 단점을 보완하기 위해 상용 graphite sheet를 이용하여 X-ray 마스크를 제작하였다. 제작된 graphite 마스크와 SiN 마스크를 이용하여 동일한 조건에서 X-ray 노광 실험을 하였고 마스크의 외형변화를 관찰하였다. 그 결과 SiN 마스크는 에너지 2.3GeV, 평균 전류 110mA에서 약 18시간 만에 파괴되었으나 graphite mask는 60시간 경과 후에도 육안상의 변화는 관찰되지 않았다. 또한 graphite 마스크를 이용하여 제작된 미세구조물의 치수측정결과 오차가 $1{\mu}m$ 미만인 정밀한 구조물 제작이 가능함을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.807-811
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• 2002

In this work, we investigated the deposition behavior of Mo/Si multilayer thin film structures simulated by a PVD process simulator based on Monte Carlo method to assist the optimized fabrication of the high quality mask in EUVL(Extreme Ultra-Violet Lithography) process. The shape of simulated thin film structures turned out to be largely dependent on the gas pressure(1∼30 mTorr), the target-substrate distance(1∼30 cm) and the diffusion length(1∼10 nm). From the simulation studies, it was predicted that relatively uniform thin film structures can be fabricated by decreasing gas pressure and increasing the target-substrate distance.

• Journal of the Optical Society of Korea
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• v.17 no.1
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• pp.38-43
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• 2013

In this study, we propose a simple and indirect method to determine the optical constants of Mo and ITO thin films in the extreme ultraviolet (EUV) wavelength region by using X-ray reflectometry (XRR) and Rutherford backscattering spectrometry (RBS). Mo and ITO films were deposited on silicon substrates by using an RF magnetron sputtering method. The density and the composition of the deposited films were evaluated from the XRR and RBS analysis, respectively and then the optical constants of the Mo and ITO films were determined by an indirect optical method. The results suggest that the indirect method by using the XRR and RBS analysis will be useful to search for suitable high absorbing EUVL mask material quickly.