• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.807-811
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• 2002

In this work, we investigated the deposition behavior of Mo/Si multilayer thin film structures simulated by a PVD process simulator based on Monte Carlo method to assist the optimized fabrication of the high quality mask in EUVL(Extreme Ultra-Violet Lithography) process. The shape of simulated thin film structures turned out to be largely dependent on the gas pressure(1∼30 mTorr), the target-substrate distance(1∼30 cm) and the diffusion length(1∼10 nm). From the simulation studies, it was predicted that relatively uniform thin film structures can be fabricated by decreasing gas pressure and increasing the target-substrate distance.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.88-88
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• 2010

We synthesized molybdenum thin films deposited by RF magnetron sputtering and physicochemical analysis was performed. The physical and chemical properties of these films were examined with X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The obtained film at the oxygen ratio of 0% showed crystallinity of cubic Mo(110) phase. After the oxygen ratio increased more than 5% in the sputter gas, the molybdenum films were formed as an amorphous phase. The thickness of the Mo thin film was drastically decreased from 1000 nm to ca 70 nm after introduction of oxygen in the sputter gas confirmed by spectroscopic ellipsometer (SE) and scanning electron spectroscopy (SEM). The calculated band gap of the film deduced from SE data increased from 3.17 to 3.63 eV by addition of oxygen in the sputter gas. The roughness of the Mo film was examined with atomic force microscopy (AFM) and it was dramatically decreased by introducing of oxygen during sputtering. XPS results revealed that the ratio of metallic Mo species in the film decreased by the contents of Mo(VI) species increased at the ratio of oxygen increased in the sputter gas and fully oxidized at low content of oxygen in the sputter gas.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.3
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• pp.149-154
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• 2000

Bi-layer Mo films were deposited on soda-lime glass substrates using DC magnetron supttering. Increasing gas pressure, the resistivity varied from $1\times10^{-5}\; to\; 8.3\times10^{-3}\; \Omega.cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The micro-structure of the compressively-stressed film which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. The impurity levels in the Mo film exhibited highly concentrated Na, Se and O elements due to less dense micro-structure. The degree of Na diffusion depends on the type of the glass substrate used and the nature of the Mo film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.36-39
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• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

• Journal of Surface Science and Engineering
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• v.33 no.4
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• pp.266-272
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• 2000

Sputtered $MoS_2$ thin films provide lubrication and wear improvements for vacuum and space applications. In this study, deposition of $MoS_2$ thin films by R.F. magnetron sputtering was studied with regard to the micro-structural change of $MoS_2$ film and mechanical properties. The coating parameters such as the working pressure, the RF power, the substrate temperature, the etching time were varied to determine how these parameters affected the film morphology and mechanical properties of deposited films. The best wear properties and critical load were observed with the film deposited at $70^{\circ}C$, 1.0$\times$$10^{ -3}$ Torr, 170W and 1 hour deposition time. The critical load increased with the increase of sputter etching time.

• Journal of Electrochemical Science and Technology
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• v.10 no.4
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• pp.424-432
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• 2019

Planar BiVO₄ and 3 wt% Mo-doped BiVO₄ (abbreviated as Mo:BiVO₄) film were prepared by the facile spin-coating method on fluorine doped SnO₂(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO₄ film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al₂O₃ layer, the ultra-thin Al₂O₃ layer with a thickness of approximately 2 nm was deposited on BiVO₄ film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO₄ and Mo:BiVO₄ films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al₂O₃ layer, the Al₂O₃ coated BiVO₄ (Al₂O₃/BiVO₄) film exhibited enhanced photoelectrochemical performance in 0.5 M Na₂SO₄ solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as V_RHE) than BiVO₄ film (0.12 mA/㎠ at 1.23 V_RHE). Moreover, Al₂O₃ coating on the Mo:BiVO₄ film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 V_RHE) than the Mo:BiVO₄ film (0.86 mA/㎠ at 1.23 V_RHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO₄ film and Al₂O₃/Mo:BiVO₄ film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (V_FB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al₂O₃ coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al₂O₃ layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.361-366
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• 2004

The interface stability of Ta-Mo alloy film on SiO$_2$ was investigated. Ta-Mo alloy films were formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power, When the atomic composition of Ta was about 91％, the measured work function was 4.24 eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy film and SiO$_2$, C-V and XRD measurements were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and 90$0^{\circ}C$. Even after 90$0^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• Journal of the Korean Magnetics Society
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• v.9 no.5
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• pp.256-262
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• 1999

Sputter deposited CoCr(Mo)/Si film were studied with emphasis on the correlation between magnetic properties and crystallographic orientation. The perpendicular coercivities of CoCr films decreased with Si underlayer thickness, whereas those of CoCrMo films increased with Si underlayer thickness. It has been explained that additions of the larger atomic radius Mo atoms in CoCr films impedes crystal growth resulting in a decrease in grain size, thus this small grain size may induce high perpendicular coercivity. The c-axis alignment of CoCrMo film was improved due to addition of 2at.%Mo. It means CoCrMo layer grow self-epitaxial directly from orientation and structure of Si underlayer when the main layer grow on underlayer.

• Journal of Sensor Science and Technology
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• v.17 no.3
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• pp.203-209
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• 2008

Thick film formaldehyde (HCHO) gas sensors were fabricated by using $La_1_{-x}Sr_xMO_3$ (M= Fe, Co, Mn) ceramics. The powders of $La_1_{-x}Sr_xMO_3$ (M=Fe, Co, Mn) were synthesized by conventional solid-state reaction method. By using the $La_1_{-x}Sr_xMO_3$ (M=Fe, Co, Mn) paste, the thick-film formaldehyde sensors were prepared on the alumina substrate by silkscreen printing method. The experimental results revealed that $La_1_{-x}Sr_xMO_3$ (M= Fe, Co, Mn) ceramic powder has a perovskite structure and the thick-film sensor shows excellent gas-sensing characteristics to formaldehyde gas (sensitivity of $La_{0.8}Sr_{0.2}FeO_3$, S= 14.7 at operating temperature of $150^{\circ}C$ in 50 ppm HCHO ambient).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.23-26
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• 2017

Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.