• Title/Summary/Keyword: Mo/Si thin film

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The study of crystallization to Si films deposited using a sputtering method on a Mo substrate (Mo기판 위에 sputtering 법으로 성장된 Si 박막의 결정화 연구)

  • 김도영;고재경;박중현;이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.36-39
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    • 2002
  • Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

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Computer Simulation of Mo/Si Thin Film Characteristics for EUVL Technology (EUVL 응용을 위한 Mo/Si 박막 특성 전산모사)

  • Lee, Young-Tae;Chung, Yong-Chae
    • Journal of the Korean Ceramic Society
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    • v.39 no.8
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    • pp.807-811
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    • 2002
  • In this work, we investigated the deposition behavior of Mo/Si multilayer thin film structures simulated by a PVD process simulator based on Monte Carlo method to assist the optimized fabrication of the high quality mask in EUVL(Extreme Ultra-Violet Lithography) process. The shape of simulated thin film structures turned out to be largely dependent on the gas pressure(1∼30 mTorr), the target-substrate distance(1∼30 cm) and the diffusion length(1∼10 nm). From the simulation studies, it was predicted that relatively uniform thin film structures can be fabricated by decreasing gas pressure and increasing the target-substrate distance.

High temperature poly-Si thin film transistors on a molybdenum substrate

  • Kim, Do-Young;Gangopadhyay, Utpal;Park, Joong-Hyun;Ko, Jae-Kyung;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.523-525
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    • 2002
  • The poly-Si thin film can be used in high mobility active matrix liquid-crystal display (AMLCD) and system on panel (SOP). In this paper, poly-Si thin films were grown by novel high temperature process on the molybdenum (Mo) substrate. By applying a high current above 48A on a Mo substrate. We obtained an improved crystalline Si films with the crystallinity over 80%. We exhibit the properties of structural and electrical properties of high temperature poly-Si thin film transistor on the Mo substrates.

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Formation of MoSi2 Layer by Hydrogen Reduction and Si-pack Cementation (수소 환원 공정과 실리콘 확산 침투 처리 공정을 통한 이규화 몰리브덴 코팅층 형성)

  • Jeon, In Mok;Byun, Jong Min;Kim, Se Hoon;Kim, Jin Woo;Kim, Young Do
    • Korean Journal of Metals and Materials
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    • v.50 no.9
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    • pp.653-657
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    • 2012
  • In this study, a molybdenum disilicide ($MoSi_2$) coating process was investigated by hydrogen reduction and Si-pack cementation. At first, the metallic Mo coating was carried out by hydrogen reduction of $MoO_3$ powder at $750^{\circ}C$ for various holding times (1, 2, 3 h) in hydrogen atmosphere. A $4.3{\mu}m$ thick metallic molybdenum thin film was formed at 3 h. $MoSi_2$ was obtained by Si-pack cementation on molybdenum thin film through hydrogen reduction processing. It was carried out using $Si:Al_2O_3:NH_4Cl=5:92:3$ (wt%) packs at $900^{\circ}C$ for various holding times (30, 60, 90 min) in Ar atmosphere. When the holding time was 90 min, a $MoSi_2$ layer was coated successfully and a $15.4{\mu}m$ thickness was observed.

Electrical Properties of Molybdenum Metal Deposited by Plasma Enhanced - Atomic Layer Deposition of Variation Condition (다양한 조건의 플라즈마 원자층 증착법으로 증착된 Mo 금속의 전기적 특성)

  • Lim, Taewaen;Chang, Hyo Sik
    • Korean Journal of Materials Research
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    • v.29 no.11
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    • pp.715-719
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    • 2019
  • Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). $Mo(CO)_6$ and $H_2$ plasma are used as precursor. $H_2$ plasma is induced between ALD cycles for reduction of $Mo(CO)_6$ and Mo film is deposited on Si substrate at $300^{\circ}C$. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is $176{\mu}{\Omega}{\cdot}cm$ at $Mo(CO)_6$ pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

Effects of Mo and Si on the Coercivity of CoCrTa/CrMo and CoCrTa/CrSi Thin Film Media (CoCrTa/CrX (X=Mo, Si) 자성박막의 보자력에 미치는 Mo와 Si의 영향)

  • 조준식;남인탁;홍양기
    • Journal of the Korean Magnetics Society
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    • v.9 no.4
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    • pp.203-209
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    • 1999
  • Effects of Mo and Si addition in Cr underlayer on magnetic properties of CoCrTa/CrMo and CoCrTa/Si thin films media were investigated. Thin films were prepared with DC magnetron sputtering system. The thickness of CoCrTa magnetic layer and Cr underlayer were fixed at 300 $\AA$ and 700 $\AA$, respectively. The substrate heating temperature was kept constant at 26$0^{\circ}C$ for both magnetic layer and underlayer preparation. The coercivity increase of CoCrTa film was realized due to Mo addition in Cr underlayer. Si addition made a small decrease in coercivity. Coercivity increase seems to be attributed by the improvement of preferred orientation of Cr(200) plane. It is found that lattice fit between Cr(200) and CoCrTa(1120) of CrMo underlayer is better than that of CrSi underlayer. This small misfit may also contribute coercivity increase.

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The Effect of Si Underlayer on the Magnetic Properties and Crystallographic Orientatation of CoCr(Mo) Thin Film (CoCr(Mo) 박막의 자기적 특성 및 미세구조에 미치는 Si 하지층의 영향)

  • 이호섭;남인탁
    • Journal of the Korean Magnetics Society
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    • v.9 no.5
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    • pp.256-262
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    • 1999
  • Sputter deposited CoCr(Mo)/Si film were studied with emphasis on the correlation between magnetic properties and crystallographic orientation. The perpendicular coercivities of CoCr films decreased with Si underlayer thickness, whereas those of CoCrMo films increased with Si underlayer thickness. It has been explained that additions of the larger atomic radius Mo atoms in CoCr films impedes crystal growth resulting in a decrease in grain size, thus this small grain size may induce high perpendicular coercivity. The c-axis alignment of CoCrMo film was improved due to addition of 2at.%Mo. It means CoCrMo layer grow self-epitaxial directly from orientation and structure of Si underlayer when the main layer grow on underlayer.

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CO Gas Sensing Characteristic of ZnO Thin Film/Nanowire Based on p-type 4H-SiC Substrate at 300℃ (P형 4H-SiC 기판에 형성된 ZnO 박막/나노선 가스 센서의 300℃에서 CO 가스 감지 특성)

  • Kim, Ik-Ju;Oh, Byung-Hoon;Lee, Jung-Ho;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.2
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    • pp.91-95
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    • 2012
  • ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

Evaluations of Si based ternary anode materials by using RF/DC magnetron sputtering for lithium ion batteries

  • Hwang, Chang-Muk;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.302-303
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    • 2010
  • Generally, the high energy lithium ion batteries depend intimately on the high capacity of electrode materials. For anode materials, the capacity of commercial graphite is unlike to increase much further due to its lower theoretical capacity of 372 mAhg-1. To improve upon graphite-based negative electrode materials for Li-ion rechargeable batteries, alternative anode materials with higher capacity are needed. Therefore, some metal anodes with high theoretic capacity, such as Si, Sn, Ge, Al, and Sb have been studied extensively. This work focuses on ternary Si-M1-M2 composite system, where M1 is Ge that alloys with Li, which has good cyclability and high specific capacity and M2 is Mo that does not alloy with Li. The Si shows the highest gravimetric capacity (up to 4000mAhg-1 for Li21Si5). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. Si thin film is more resistant to fracture than bulk Si because the film is firmly attached to the substrate. Thus, Si film could achieve good cycleability as well as high capacity. To improve the cycle performance of Si, Suzuki et al. prepared two components active (Si)-active(Sn, like Ge) elements film by vacuum deposition, where Sn particles dispersed homogeneously in the Si matrix. This film showed excellent rate capability than pure Si thin film. In this work, second element, Ge shows also high capacity (about 2500mAhg-1 for Li21Ge5) and has good cyclability although it undergoes a large volume change likewise Si. But only Ge does not use the anode due to its costs. Therefore, the electrode should be consisted of moderately Ge contents. Third element, Mo is an element that does not alloys with Li such as Co, Cr, Fe, Mn, Ni, V, Zr. In our previous research work, we have fabricated Si-Mo (active-inactive elements) composite negative electrodes by using RF/DC magnetron sputtering method. The electrodes showed excellent cycle characteristics. The Mo-silicide (inert matrix) dispersed homogeneously in the Si matrix and prevents the active material from aggregating. However, the thicker film than $3\;{\mu}m$ with high Mo contents showed poor cycling performance, which was attributed to the internal stress related to thickness. In order to deal with the large volume expansion of Si anode, great efforts were paid on material design. One of the effective ways is to find suitably three-elements (Si-Ge-Mo) contents. In this study, the Si based composites of 45~65 Si at.% and 23~43 Ge at.%, and 12~32 Mo at.% are evaluated the electrochemical characteristics and cycle performances as an anode. Results from six different compositions of Si-Ge-Mo are presented compared to only the Si and Ge negative electrodes.

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Low-temperature Epitaxial Growth of a Uniform Polycrystalline Si Film with Large Grains on SiO2 Substrate by Al-assisted Crystal Growth

  • Ahn, Kyung Min;Kang, Seung Mo;Moon, Seon Hong;Kwon, HyukSang;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.1 no.2
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    • pp.103-108
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    • 2013
  • Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a $SiO_2$ substrate at $450^{\circ}C$ by a Al-assisted crystal growth process. For the purpose, a thin Al layer was deposited on the $SiO_2$ substrate for Al-assisted crystal growth. However, the epitaxial growth of Si film resulted in a rough surface with humps. Then, we introduced a thin amorphous Si seed layer on the Al film to minimize the initial roughness of Si film. With the help of the Si seed layer, the surface of the epitaxial Si film was smooth and the crystallinity of the Si film was much improved. The grain size of the $1.5-{\mu}m$-thick Si film was as large as 1 mm. The Al content in the Si film was 3.7% and the hole concentration was estimated to be $3{\times}10^{17}/cm^3$, which was one order of magnitude higher than desirable value for Si base layer. The results suggest that Al-doped Si layer could be use as a seed layer for additional epitaxial growth of intrinsic or boron-doped Si layer because the Al-doped Si layer has large grains.