• Korean Journal of Materials Research
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• v.6 no.1
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• pp.40-48
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• 1996

고주파 저손실 재질로 사용되고 있는 Mn-Zn 페라이트의 제조공정 중 소결조건과 Ta2O5첨가가 Mn-Zn 페라이트의전력손실에 미치는 영향에 대해서 연구하였다. 등조성선을 따라 냉각하기 위하여 컴퓨터를 사용해서 정확하게 산소분압을 조절하였으며 적절한 등조성선을 선택함으로써 보다 좋은 손실특성을 얻을 수 있었다. CaO-SiO2 첨가계에 Ta2O5를 0ppm에서 400ppm으로 변화시켜 가며 첨가하였으며, Ta2O5 가 400ppm 첨가되었을 경우 균일한 grain 성장과 더불어 낮은 전력손실을 나타내었다. 온도에 상응하는 상평형 산소분압을 정확히 맞춰 냉각할 경우 전력손실 최소값이 질소 분위기에서 냉각시킨 시편보다 높은 온도쪽으로 이동됨도 확인할 수 있었다.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.143-148
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• 2000

We made MnZn ferrites by conventional ceramic processing method and observed magnetic domain structures by Bitter method. The Bitter method revealed that the domain structure of the surface is stripe-like. When a magnetic field was applied, the domain wall motion was observed during the initial magnetization process and the irregular motion of domain wall or domain rotation was observed near the saturation magnetic field (90∼120 Oe).

• Electrical & Electronic Materials
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• v.3 no.3
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• pp.205-214
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• 1990

본 논문은 저손실 Mn-Zn-Fe 페라이트 제조에 관하여 연구한 것이다. Mn-Zn-Fe 페라이트는 16mol% Xno, 31mol% MnO 및 53mol% Fe$_{2}$O$_{3}$로 조성하였으며 0.1wt% $Na_{2}$SiO$_{3}$ 0.05wt% $Na_{2}$SiO$_{3}$ 0.1%wt% CaO 0.05% SiO$_{2}$ 및 0.05wt% SiO$_{2}$ 및 0.05wt% $Na_{2}$SiO$_{3}$ 0.1% CaO 0.05wt% $Al_{2}$O$_{3}$를 미량 첨가하였다. 그리고 하소와 분쇄과정을 거친 분말은 충진성을 높이기 위하여 과립화하였다. 소결 1250, 1300 및 1350.deg.C에서 이루어졌고, 평형 산소분압은 소오킹 시 PO$_{2}$는 6%부터 시작하여 점차 감소시켰으며 900.deg.C에서 순수한 질소 분위기로 냉각시켰다. 초투자율, 손실계수 및 고유저항 등의 자기적인 특성은 1300.deg.C에서 소결했을 경우의 것이 가장 우수하였다. 즉, 초투자율은 2*$10^{3}$~$10^{3}$의 높은 값을 얻을 수 있었으며 tan.delta./.mu.i값은 100KHz~ 400KHz의 고파수대에서 9*10$_{-6}$~21*10$_{-6}$이었으며 고유저항 값은 485~680 .OMEGA.-cm의 높은 값을 나타내어 중간주파수대의 자심재료에 적합한 페라이트임을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.289-295
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• 1997

Effect of ceramic processing was investigated on the microstructure and electronic properties of low loss Mn-Zn ferrite. Addition of CaO and SiO2 to calcined powder rather than to raw materials mixtured resulted in finer-grained microstructure. Higher oxygen pressure during sintering caused microstructural inhomogeneity and the increase in power loss and disaccommodation factor. Relatively low power loss was found for sintering up to 130$0^{\circ}C$ from powders calcined at high temperature and milled shortly. It was caused by slow densification rate and normal grain growth up to 130$0^{\circ}C$. Calcination at low temperature and prolonged milling enhanced den-sification, which gave a fine grained microstructure and low powder loss at sintering temperture below 120$0^{\circ}C$. Sintering temperature above 125$0^{\circ}C$, however, showed abnormal grain growth.

• Proceedings of the Korean Magnestics Society Conference
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• 1999.10a
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• pp.38-39
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• 1999

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.290-295
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• 2003

In this study, we investigated the effect of particle size of Mn-Zn ferrite which is used as a material of electromagnetic wave absorber on electromagnetic wave properties. With increasing the particle size, the matching frequency is shifted toward lower frequency and the absorption ability of electromagnetic wave is decreased. We suggest that a sheet-type ferrite absorber composed of Mn-Zn ferrite with large particle is useful to compare with it composed of small particle size for mobile phone.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.756-761
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• 2003

The microwave absorption properties of silicone, chloride polyethylene(CPE), and natural lacquer which is newly suggested in this study as a binder for composite microwave absorber were investigated to develop a superior microwave absorber. MnZn ferrite composite microwave absorbers mixed with them were prepared and their absorption property was investigated. A MnZn ferrite microwave absorber mixed with natural lacquer showed an excellent microwave absorption property in expanded frequency band.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.668-673
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• 1997

A Single-crystalline Mn-Zn Ferrite (110 orientation) was masklessly etched by focused Ar laser irradiation in an H$_3$PO$_4$ solution. The depth of the etched grooves increases with increasing a laser power, decreasing a scan speed, and increasing the H$_3$PO$_4$concentration. The width of the etched grooves increases with a increasing laser power, but was relatively insensitive to the scan speed and H$_3$PO$_4$concentration. High etching rate of up to 714 ${\mu}{\textrm}{m}$/s and an aspect ratio of 6 for vertical slab structure have been obtained by the light-guiding effect of the laser bean in the H$_3$PO$_4$ solution.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.243-244
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 1996.10a
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• pp.52-53
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• 1996