• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1005-1010
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• 1997

ZnS:Mn thin film was made by coevaporation with Electron Beam Evaparation(EBE) method. And structural and optical characteristics of ZnS:Mn thin films were investigated by substrate temperature annealing temperature and dopant Mn. When ZnS:Mn thin film was well deposited with cubic crystalline at substrate temperature of 30$0^{\circ}C$ its surface index was [111] and its lattice constant of a was 5.41$\AA$. Also When ZnA:Mn thin film was well made with hexagonal crystalline at substrate temperature of 30$0^{\circ}C$annealing temperature of 50$0^{\circ}C$and annealing time of 60min its miller indices were (0002) (1011), (1012) and (1120). And its lattice constant of a and c was 3.88$\AA$and 12.41$\AA$ respectively. Finally hexagonal ZnS:Mn thin film with dopant Mn of 0.5wt% had fundamental absorption wavelength of 342nm. And so its energy bandgap was about 3.62eV.

• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.187-192
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• 2003

The magnetic and thermal properties of NiFe/[IrMn-Mn]/CoFe with Mn additions have been studied. As-deposited CoFe pinned layers with [IrMn-Mn]layer had dominantly larger exchange biasing field ( $H_{ex}$) and blocking temperature ( $T_{b}$) than those with pure I $r_{22}$M $n_{78}$ used. The $H_{ex}$ and $T_{b}$ improved with 76.8-78.1 vol% Mn, but those of the NiFe/IrMn/CoFe dropped considerably with more addition of 0.6 vol % Mn. The average x-ray diffraction peak ratios of fcc [(111)CoFe, NiFe]/(111)IrM $n_3$ textures for the Mn inserted total vol of 75.5, 77.5, and 79.3% were about 1.4, 0.8, and 0.6, respectively. For the sample without Mn inserted layer, the $H_{ex}$ between IrMn and CoFe layers was almost zero, but it increased to 100 Oe after annealing of 250 $^{\circ}C$. For as-grown two multilayers samples with ultra-thin Mn layers of 77.5 and 78.7 vol %, the $H_{ex}$s were 259 and 150 Oe, respectively. In case of IrMn with 77.5 vol% Mn, the $H_{ex}$ was increased up to 475 Oe at 350 $^{\circ}C$ but decreased to 200 Oe at 450 $^{\circ}C$, respectively. The magnetic properties and thermal stabilities of NiFe/[IrMn-Mn]/CoFe multilayer were enhanced with Mn additions. In applications where higher $H_{ex}$ and $T_{b}$ are required, proper contents of Mn can be used. be used. used.

• Transactions of Materials Processing
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• v.31 no.6
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• pp.365-375
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• 2022

The microstructure and high-temperature plastic deformation behavior of the modified Al-0.7Mn alloy were investigated and compared with the conventional Al-0.3Mn (Al3102) alloy. α-Al (matrix) and Al₆(Mn, Fe) phases were identified in both alloys. As a result of microstructure observation, both alloys showed equiaxed grains, and Al-0.7Mn alloy showed larger grain size and higher Al₆(Mn, Fe) fraction than Al-0.3Mn alloy. High temperature compressive tests, the deformation temperatures of 410℃, 450℃, 490℃, 530℃ and strain rats of 10^-2/s, 10^-1/s, 1/s, 10/s, were conducted using Gleeble equipment. The flow stress values of Al-0.7Mn alloy were higher than that of Al-0.3Mn alloy at all strain rates and temperature conditions. Constitutive equations were presented using the flow stresses obtained from experimental results and the Zener-Hollomon parameter. In the true stress-true strain curves of the two alloys, the experimental and predicted values were in good agreement with each other. Based on the dynamic material model, eutectic deformation maps of Al-0.7Mn and Al-0.3Mn alloys were suggested, and the plastic instability region was presented. The modified Al-0.7Mn alloy showed a wider plastic instability region than that Al-0.3Mn alloy. Based on the process deformation maps, the MPE tube parts could be manufactured through the actual extrusion process using the suggested conditions.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.139-144
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• 2014

Activated carbon fiber (ACF) was modified with MnS nanoparticles to prepare MnS-ACF, and it was employed for preparation of MnS-$ACF/TiO_2$ composites with titanium (IV) n-butoxide (TNB). The properties of MnS-$ACF/TiO_2$ composites were characterized by XRD, SEM, and EDX. EDX results showed the presence of C, O, and Ti as major elements and traces of the metal elements Mn and S. The photocatlytic activity was evaluated by degradation of methyl blue (MB) and methyl orange (MO) dye. The results demonstrated that as-prepared samples could effectively photodegrade MB and MO under UV irradiation. Subsequently, the decomposition of MB solution showed the combined effects of adsorptions by ACF and enhanced photocatalytic effect by $TiO_2$. Finally, the photocatalytic effect increased due to photo-induced-electron absorption effect by ACF and electron trap effect by comodified MnS nanoparticles.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.1-5
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• 2008

ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.141-141
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• 2010

ZnS:Mn yellow phosphors doped with Cu for white light emitting diodes were synthesized by solid state reaction method. Photoluminescence excitation spectra originated from $Mn^{2+}$ were ranged from 450 nm to 500 nm. The yellow emission at around 580 nm was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions in ZnS:Mn,Cu phosphors. The highest photoluminescence intensity of the phosphors under 405 nm excitation was obtained at Cu concentration of 0.02 mol%.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.3
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• pp.99-114
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• 2012

Proxy Mobile IPv6 (PMIPv6) has received considerable attention between telecommunications and the Internet communities and does not require active participation of the Mobile Node (MN) by way of network-based mobility management. The PMIPv6 domain is studying establishment in progress to support extensively a number of MN by using a low handover latency. In this research, we are propose a novel 3S scheme for building Scalable and Secure and Seamless PMIPv6 domains. In the proposed scheme, all of Mobility Access Gateway (MAG) are acting as the Local Mobility Anchor (LMA) and composing a virtual ring with another MAG. General hashing is used in the efficient distribution-mapping between each MN and the MN's LMA of all MAGs. And, MAG and MN are authenticated using the symmetric key. Through mathematical analysis, we verifies the safety, scalability, and seamless service for 3S. Also, we're propose a handover procedure of 3S and show better than the existing schemes in terms of handover latency.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.5
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• pp.2993-2999
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• 2015

Steel companies are applying Ni-B or Ni-Co alloy plating to protect the surface of Continuous casting mold, and they are using saccharin polish which causes crack on plating layer due to sulfur in saccharin. It is considered that the Ni-S compound causes the cracking and additional tensile stresses. The Ni-Mn-B ternary alloy plating was developed for suppression of crack by forming Mn-S compound before Ni-S compound is formed, but there were no domestic or international standard on the Ni-Mn-B alloy plating. Therefore, reliability evaluation standard was established to evaluate the newly developed Ni-Mn-B plating. To develop accelerating life testing method, FMEA(Failure Mode & Effective analysis) was used to analyze the cause of the main failure in plating. The Ni-Mn-B reliability standard included accelerating life test method, and it was categorized by the fundamental performance test, environment test, and accelerated life test, and was designed to guarantee 1 000 hours of B10 life with 80 % reliable level.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.6
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• pp.1194-1203
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• 2004

The RR protocole, proposed in IETF mip6 WG and standardized by RFC 3775 at lune 2004, send a message 'Binding Update' that express MN's location information to CN safety and update location information. Standard RR protocole has some problems with initiating the protocol by the MN; it causes to increases in communication load in the home network, to increases communication delay between MN and CN. Also, is connoting vulnerability to against attacker who are on the path between CN and HA in security aspect. This paper proposes doing to delegate MN's location information update rights by HA new location information update method. That is, When update MN's location information to HA, Using MN's private key signed location information certificate use and this certificate using method that HA uses MN's location information at update to CN be. It decreases the route optimization overhead by reducing the number of messages as well as the using location information update time. Also, remove security weakness about against attacker who are on the path between CN and HA.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.13-16
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• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.