• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.703-712
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• 1997

The PTCR devices of BaTiO3 doped with Sb2O3, SiO2 were prepared by Liquid Addition Method(LPAM) where doping sources were used in the forms of Liquid. The amounts of doping in LPMA is smaller than that in solid state mixing method. Also the doping process in LPMA is very suitable for BaTiO3-based PTCR devices because it is easy to obtain homogeneous mixing and reproductivity. By optimizing the doping condition in BaTiO3 system, (0.09 mol% Sb2O3, 0.25 wt% SiO2 and 0.02 wt% MnO2) it was possible to fabricate BaTiO3-based PTCR devices whee the room-temperature resistivity and specific resistivity were 15{{{{ OMEGA }}cm and 2$\times$106 respectively.

• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.261-263
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• 2006

In order to investigate the magnetic properties of Eu ions in the single crystal $MnF_2$, the temperature dependent magnetic susceptibilities of the antiferromagnetic $MnF_2$ and the single crystal $MnF_2$(1.5% $EuF_3$) with the rutile structures were measured in the temperature range from 4K to 300K. The detailed analysis of the measured susceptibilities showed that the magnetic susceptibility by the doping of the small amount $EuF_3$ in the antiferromagnetic single crystal $MnF_2$ follows the antiferromagnetic Curie-Weiss law with the negative paramagnetic Curie temperature similarly as in $MnF_2$. It was also found that Eu ion has +3 valence. This solves the long standing discrepancy on this problem.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.92-95
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• 2004

Using the Micro-Pulling Down (${\mu}$-PD), $MnO_2$ and $Tb_4O_7$ co-doped crack-free stoichiometric $LiNbO_3$ single crystals were grown in 1.0 mm diameter and 25-30 mm length for c-axis. The homogeneous distributions of $MnO_2$ and $Tb_4O_7$ concentration were confirmed by the Electron Probe Microanalysis (EPMA). Also, the infrared OH absorption band of the single crystals observed by using a Fourier Transform-Infrared Spectrophotometer (FT-IR) at room temperature and the photoluminescence spectra was measured with respect to the $MnO_2$ and $Tb_4O_7$ doping.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.203-206
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• 2007

Effects of doping rare earth elements on Ln site of $Ln_{0.7}Ca_{0.3}MnO_3$ (Ln = N d, Sm and La) were examined from structure, magnetic and electrical properties. Size of a-axis increased as following order of La < Nd < Sm, whereas c-axis was not much changed. Curie temperatures of 170 K for $Nd_{0.7}Ca_{0.3}MnO_3$, 110 K for $Sm_{0.7}Ca_{0.3}MnO_3$ and 250 K for $La_{0.7}Ca_{0.3}MnO_3$ were obtained. This result coincides with change of Mn-O bond length causing by a-axis lattice constant. The highest magnetroresistance ratios were 22% at 77 K for $Sm_{0.7}Ca_{0.3}MnO_3$, 32% at 110 K for $Nd_{0.7}Ca_{0.3}MnO_3$, and 33% at 180 K for $La_{0.7}Ca_{0.3}MnO_3$.

• Bulletin of the Korean Chemical Society
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• v.15 no.12
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• pp.1058-1064
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• 1994

Mn/In$_2O_3$ systems with a variety of Mn mol${\%}$ were prepared to investigate the effect of Mn-addition on the catalytic activity of Mn/In$_2O_3$ in the oxidative coupling of methane. The oxidative coupling of methane was examined on pure In$_2O_3$ and Mn/In$_2O_3$ catalysts by cofeeding gaseous methane and oxygen under atmospheric pressure between 650 and 830 $^{\circ}C$. Although pure In$_2O_3$ showed no C$_2$ selectivity, both the C$_2$ yield and the C$_2$ selectivity were increased by Mn-doping. The 5.1 mol${\%}$ Mn-doped In$_2O_3$ catalyst showed the best C$_2$ yield of 2.6${\%}$ with a selectivity of 19.1${\%}$. The electrical conductivities of pure and Mn-doped In$_2O_3$ systems were measured in the temperature range of 25 to 100 $^{\circ}C$ at PO$_2$'S of 1 ${\times}$ 10$^{-7}$ to 1 ${\times}$ 10 $^{-1}$ atm. The electrical conductivities were decreased with increasing Mn mol${\%}$ and PO$_2$, indicating the specimens to be n-type semiconductors. Electrons serve as the carriers and manganese can act as an electron acceptor in the specimens. Manganese ions doped in In$_2O_3$ inhibit the ionization of neutral interstitial indium or the transfer of lattice indium to interstitial sites and increase the formation of oxygen vacancy, giving rise to the increase of the concentration of active oxygen ion on the surface. It is suggested that the active oxygen species adsorbed on oxygen vacancies are responsible for the activation of methane.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1517-1519
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• 1999

FED용 형광체로 사용되는 $ZnGa_2O_4$를 Glycine Nitrate Process로 합성하여 고상 반응법으로 합성한 $ZnGa_2O_4$ 분말과 비교 분석하였다. 또한 Glycine Nitrate Process로 제조시 Mn의 doping 농도를 변화시키면서 각각의 조성비에 따른 발광특성을 알아보았다. TGA 측정 결과 GNP법으로 합성된 $ZnGa_2O_4$의 경우약 $300^{\circ}C$이상에서 무게감량이 없으며, XRD 상분석 결과 연소반응 후 이미 상형성이 이루어짐을 알 수 있었다. PL측정을 결과 GP(Glycine Nitrate Process)로 제조된 $ZnGa_2O_4$ 분말의 발광효율이 고상 반응법으로 제조된 분말보다 우수하였으며, 균일하고 비표면적이 큰 단일상임이 관찰되었고, 더 작은 에너지와 시간으로 제조할 수 있는 장점이 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.178-183
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• 2002

The effects of Dy$_2$O$_3$and Er$_2$O$_3$addition on the electromagnetic properties of Mn-Zn ferrite were investigated in the doping concentration range from 0.05 wt% to 0.25 wt%. All samples were prepared by standard fabrication of ferrite ceramics. The XRD patterns of sample were observed spinel and secondary phase. The densities of sample were showed nearly constant values. As the increased additive, electrical resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. Excess doped with Dy$_2$O$_3$ and Er$_2$O$_3$, those values decreased. The maximum electrical resistivity was observed with 0.15 we% and initial permeability was observed with 0.05 wt%. Magnetic loss decreased with additive and then increased in proportion to increased.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.52-55
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• 2009

A red phosphor, $(Sr,Ca)_2P_2O_7:Eu^{2+},Mn^{2+}$, for UV-LED was synthesized under a reducing atmosphere, and its luminescent properties were investigated. The phosphor absorbs ultraviolet light at around 400 nm and efficiently emits red light at approximately 610 nm through an energy transfer from $Eu^{2+}$ to $Mn^{2+}$. Using the varied input current test for the phosphor-loaded LED lamps, it was found that the luminescent efficiency of the phosphor decreased with increasing light flux. This might be due to an increased probability of excited-state absorption and the consequent non-radiative relaxation in $Mn^{2+}$ ions in the condition of high photon influx.

• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.290-298
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• 2018

In order to investigate the effect of thickness on the dielectric and piezoelectric properties of (001) PMN-29PT single crystals, three different types of PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: high density crystal [99%], low density crystal [95%], and high density crystal doped with Mn [98.5%]. When their thickness decreased from 0.5 mm to 0.05 mm, their dielectric constant ($K_3{^T}$), piezoelectric constants ($d_{33}$ and $g_{33}$), and electromechanical coupling factor ($k_t$) decreased continuously. However, their dielectric loss (tan ${\delta}$) increased. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$), increased the coercive electric field ($E_C$), and prevented local depoling. Therefore, Mn-doped PMN-PT crystals show high stability as well as high performance, even in the form of very thin plates (< 0.2 mm), and thus are suitable for application to high frequency composites, medical ultrasound probes, non-destructive testing devices (NDT), and flexible devices.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.24-27
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• 2013

In this paper, we investigated the effect of luminescence properties of various concentrations of magnesium-doped ZnS:Mn phosphor excited by plasma luminescence device. The PL intensity was evaluated in the range of 300~500 nm excitation wavelengths. We found the highest PL intensity of the phosphors excited by 365 nm and 450 nm was observed at Mg concentrations of 1.4 wt% and 0.8 wt%, respectively. In addition, an emission peak was distinguished at 580 nm wavelength. With increasing Mg dopant level, enhanced PL intensity was observed, which is possibly applicable to color converting materials by blue emission for white light sources. Finally, we evaluated the luminance properties of color converting ZnS:Mn,Mg phosphors with plasma blue light source. the white luminance of plasma light source with CIE(0.36,0.26) was established by color converting phosphors of ZnS:Mn with 0.8 wt% Mg.