• Title/Summary/Keyword: Mn doping

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Effect of ZnS:Mn, Dy Yellow Phosphor on White LEDs Characteristics (백색 LED의 특성에 대한 ZnS:Mn, Dy 황색 형광체의 영향)

  • Shin, Deuck-Jin;Yu, Il
    • Korean Journal of Materials Research
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    • v.21 no.6
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    • pp.295-298
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    • 2011
  • ZnS:Mn, Dy yellow phosphors for White Light Emitting Diode were synthesized by a solid state reaction method using ZnS, $MnSO_4{\cdot}5H_2O$, S and $DyCl_3{\cdot}6H_2O$ powders as starting materials. The mixed powder was sintered at $1000^{\circ}C$ for 4 h in an air atmosphere. The photoluminescence of the ZnS:Mn, Dy phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn, Dy phosphors was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions. The highest photoluminescence intensity of the ZnS:Mn, Dy phosphors under 450 nm excitation was observed at 4 mol% Dy doping. The enhanced photoluminescence intensity of the ZnS:Mn, Dy phosphors was explained by energy transfer from $Dy^{3+}$ to $Mn^{2+}$. The CIE coordinate of the 4 mol% Dy doped ZnS:Mn, Dy was X = 0.5221, Y = 0.4763. The optimum mixing conditions for White Light Emitting Diode was obtained at the ratio of epoxy : yellow phosphor = 1:2 form CIE coordinate.

Photoluminescence properties of Mn4+-activated Li2ZnSn2O6 red phosphors

  • Choi, Byoung Su;Lee, Dong Hwa;Ryu, Jeong Ho;Cho, Hyun
    • Journal of Ceramic Processing Research
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    • v.20 no.1
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    • pp.80-83
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    • 2019
  • The Mn4+-activated Li2ZnSn2O6 (LZSO:Mn4+) red phosphors were synthesized by the solid-state reaction at temperatures of 1100-1400 ℃ in air. The synthesized LZSO:Mn4+ phosphors were confirmed to have a single hexagonal LZSO phase without the presence of any secondary phase formed by the Mn4+ addition. With near UV and blue excitation, the LZSO:Mn4+ phosphors exhibited a double band deep-red emission peaked at ~658 nm and ~673 nm due to the 2E → 4A2 transition of Mn4+ ion. PL emission intensity showed a strong dependence on the Mn4+ doping concentration and the 0.3 mol% Mn4+-doped LZSO phosphor produced the strongest PL emission intensity. Photoluminescence emission intensity was also found to be dependent on the calcination temperature and the optimal calcination temperature for the LZSO:Mn4+ phosphors was determined to be 1200 ℃. Dynamic light scattering (DLS) and field-effect scanning electron microscopy (FE-SEM) analysis revealed that the 0.3 mol% Mn4+-doped LZSO phosphor particles have an irregularly round shape and an average particle size of ~1.46 ㎛.

Effect of Pr Doping in La-Sn-Mn-O

  • Kumar, Neeraj;Tripathi, Rahul;Dogra, Anjana;Awana, V.P.S.;Kishan, H.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2008.12a
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    • pp.156.2-156.2
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    • 2008
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Effect of $MnO_2$ Addition on the Electric Properties in Pb($Mg_{1/3}Nb_{2/3}$)$O_3$ Relaxor Ferroelectrics ($MnO_2$ 첨가에 따른 Pb($Mg_{1/3}Nb_{2/3}$)$O_3$계 완화형 강유전체에서의 전기적 물성변화)

  • 박재환
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.7
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    • pp.562-566
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    • 2001
  • The effects of MnO$_2$ addition on the properties in Pb(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ relaxor ferroelectrics were studied in the phase transition temperature range from -4$0^{\circ}C$ to 11$0^{\circ}C$. Specimens were made via solid state processing method. Dielectric properties, piezoelctric properties, electric-field-induced strain were examined to clarify the effect of MnO$_2$ addition in 0.9MN-0.1PT. As the amount of MnO$_2$ increases, the maximum dielectric constant and the dielectric loss decreases. Q$_{m}$ increased by increasing the doping contents of Mn. When 0.5wt% MnO$_2$ was doped, Q$_{m}$ increased from 95 to 480. The electric-filed-induced strain and polarization decreases as the amount of MnO$_2$ increases. From the experimental results, it was suggested that Mn behaves as an ferroelectric domain pinning element.ent.

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Sintering behavior and characterization of Ln0.7Ca0.3MnO3 (Ln=Nd, Sm, La) (Ln0.7Ca0.3MnO3 (Ln=Nd, Sm, La)의 소결 거동 및 특성)

  • Chon, Gom-Bai;Koo, Bon-Heun;Lee, Chan-Gyu
    • Korean Journal of Materials Research
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    • v.16 no.1
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    • pp.44-49
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    • 2006
  • Effects of doping rare earth element on Ln site of $Ln_{0.7}Ca_{0.3}MnO_3$ (Ln=Nd, Sm and La) were examined from sintering behavior, structure and magnetic properties. Sintering reactions proceeded rapidly in order of $La_{0.7}Ca_{0.3}MnO_3>Nd_{0.7}Ca_{0.3}MnO_3>Sm_{0.7}Ca_{0.3}MnO_3$. This result can be explained by diffusivity of metal cation. Size of a-axis increased as following order of La$Nd_{0.7}Ca_{0.3}MnO_3$, 93K for $Sm_{0.7}Ca_{0.3}MnO_3$ and 225K for $La_{0.7}Ca_{0.3}MnO_3$ were obtained. This result coincides with change of Mn-O bond length causing by a-axis lattice constant.

The Effects of Mn-doping and Electrode Material on the Resistive Switching Characteristics of ZnOxS1-x Thin Films on Plastic

  • Han, Yong;Cho, Kyoungah;Park, Sukhyung;Kim, Sangsig
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.1
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    • pp.24-27
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    • 2014
  • In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of $ZnO_xS_{1-x}$ resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/$ZnO_xS_{1-x}$/Au and Al/$ZnO_xS_{1-x}$/Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the $ZnO_xS_{1-x}$ devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/$ZnO_xS_{1-x}$/Cu device, the ratio of the HRS to LRS is above $10^6$, and the memory characteristics are maintained for $10^4$ sec, which values are comparable to those of ReRAM devices on Si or glass substrates.

Synthesis of Ni-rich NCMA Precursor through Co-precipitation and Improvement of Cycling through Boron and Sn Doping (공침법을 통한 Ni-rich NCMA 합성과 붕소와 주석 도핑을 통한 사이클 특성 향상)

  • Jeon, Hyungkwon;Hong, Soonhyun;Kim, Minjeong;Koo, Jahun;Lee, Heesang;Choi, Gyuseok;Kim, Chunjoong
    • Korean Journal of Materials Research
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    • v.32 no.4
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    • pp.210-215
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    • 2022
  • Extensive research is being carried out on Ni-rich Li(NixCoyMn1-x-y)O2 (NCM) due to the growing demand for electric vehicles and reduced cost. In particular, Ni-rich Li(NixCoyMn1-x-y-zAlz)O2 (NCMA) is attracting great attention as a promising candidate for the rapid development of Co-free but electrochemically more stable cathodes. Al, an inactive element in the structure, helps to improve structural stability and is also used as a doping element to improve cycle capability in Ni-rich NCM. In this study, NCMA was successfully synthesized with the desired composition by direct coprecipitation. Boron and tin were also used as dopants to improve the battery performance. Macro- and microstructures in the cathodes were examined by microscopy and X-ray diffraction. While Sn was not successfully doped into NCMA, boron could be doped into NCMA, leading to changes in its physicochemical properties. NCMA doped with boron revealed substantially improved electrochemical properties in terms of capacity retention and rate capability compared to the undoped NCMA.

Sol-gel synthesis and luminescence of $Zn_2SiO_4$:Mn, Al phosphor (Sol-gel법에 의한 $Zn_2SiO_4$:Mn, Al 형광체의 합성과 발광특성)

  • Kim, Chang-Jun;Kwon, Myoung-Seok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.271-278
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    • 2006
  • Green light emitting $Zn_2SiO_4$Mn and Al co-doped $Zn_2SiO_4$:Mn phosphor were synthesized by a sol-gel method combined with a furnace firing. The luminescent properties of the sample have been investigated. We have found that the phosphor powder with uniform shape show the maximum luminescent intensity when it is prepared with sol-gel method and fired at relatively high temperature ($1100{\sim}1300^{\circ}C$).

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