• The Korean Journal of Ceramics
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• 제4권2호
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• pp.68-71
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• 1998

The effect of Mn and Nb additions on the electrical properties of BaTiO$_3$ has been studied by means of equilibrium electrical conductivity as a function of temperature, oxygen partial pressure(Po$_2$) and composition. If the manganese ion is added to the normal Ti site, i.e. BaTi$_{1-x}Mn_xO_{\delta-6}$, the equilibrium conductivity shows strong evidence of acceptor-doped behavior. The conductivity minimum, corresponding to the transition from oxygen excess, p-type behavior to oxygen deficient, n-type behavior with decreasing Po$_2$, is displaced to lower Po$_2$ and is broadened and flattened. The partial replacement of Mn ion with Nb decreases the acceptor-doped effect and the total replacement exhibits a typical donor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped samples, for the p-type region, the electrical conductivity follows the 1/6th power dependence of oxygen partial pressure.

• Bulletin of the Korean Chemical Society
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• 제16권4호
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• pp.310-315
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• 1995

The heterobimetallic anion, (OC)5CrMn(CO)5-M+ (M+=Na+, PPN+), which has a donor-acceptor metal-metal bond1, was reacted with allyl bromide to yield BrCr(CO)5- and Mn(CO)5(CH2CHCH2). The reaction mechanism has been proposed in terms of the consecutive reaction pathway in which Cr(CO)5(THF) is an important intermediate leading to the corresponding product. Counterion effect on this reaction was also evaluated and the results were compared with those of the corresponding reaction of the mononuclear carbonyl anion, Mn(CO)5-.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.12-15
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• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• 한국재료학회지
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• 제29권3호
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• pp.150-154
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• 2019

This study investigates the effect of MnO2 and CuO as acceptor additives on the microstructure and piezoelectric properties of $0.96(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}Nb_{0.93}Sb_{0.07}O_3-0.04BaZrO_3$, which has a rhombohedral-tetragonal phase boundary composition. $MnO_2$ and CuO-added $0.96(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}Nb_{0.93}Sb_{0.07}O_3-0.04BaZrO_3$ ceramics sintered at a relatively low temperature of $1020^{\circ}C$ show a pure perovskite phase with no secondary phase. As the addition of $MnO_2$ and CuO increases, the sintered density and grain size of the resulting ceramics increases. Due to the difference in the amount of oxygen vacancies produced by B-site substitution, Cu ion doping is more effective for uniform grain growth than Mn ion doping. The formation of oxygen vacancies due to B-site substitution of Cu or Mn ions results in a hardening effect via ferroelectric domain pinning, leading to a reduction in the piezoelectric charge coefficient and improvement of the mechanical quality factor. For the same amount of additive, the addition of CuO is more advantageous for obtaining a high mechanical quality factor than the addition of $MnO_2$.

• 한국세라믹학회지
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• 제46권2호
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• pp.219-223
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• 2009

Effects of MgO or $R_2O_3$(R:Dy, Ho, Yb) on the capacitance aging behavior of multilayer ceramic capacitors (MLCCs) based on $BaTiO_3$ dielectrics under DC electrical fields has been studied. At a DC field of 1 $V{/\mu}m$, the capacitance of MLCC specimens dropped immediately in a very short period (<10 s, the first stage) and then decreased continuously with time (the second stage). Mn doping significantly increased the aging rate in the second stage. The addition of MgO or $R_2O_3$ notably decreased the second stage aging rate of Mn-doped specimens. Yb doping gives rise to the lowest aging rate in the second stage, which is due to the larger population of defect dipoles associated with oxygen vacancies.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.26-29
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• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• 한국세라믹학회지
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• 제32권1호
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• pp.140-144
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• 1995

The role of Mn on the PTCR characteristics of La-doped BaTiO3 ceramics was studied. The calculated Ns value was increased with Mn concentration and consequently pmax and pmin were increased. The behavior of pmin was explained by the Jonker's theory, and Ns value of 6.35×1017m-2 was well agreed with the theoretical estimate of Jonker's. The value state of Mn was measured by ESR, and changed around Tc from ＋3 in tetragonal phase to ＋2 in cubic phase. Therefore, the amount of electron trap increased at Tc led to the great improvement of PTC R characteristics.

• 한국세라믹학회지
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• 제25권6호
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• pp.571-576
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• 1988

The microstructure and electrical properties of 0.02Pb[Cd1/2W1/2)O3-0.505PbZrO3-0.475PbTiO3 with MnO2 addition have been investigated. The amount of MnO2 addition was 0, 0.2, 0.4, 0.6, 0.8, 1wt%, respectively. When MnO2 is added up to 0.2wt%, Mn3+ which is substituted for Ti4+ site make hole and act as a acceptor. When MnO2 is added over 0.2wt% Mn3+ which is substituted for Cd2+ site create electron and act as a donor. The variation of grain size show that it was rapidly increased by 0.4wt% addition of MnO2, and while that in the range of over 0.6wt% addition of MnO2 it was decreased. The solid solution range of MnO2 that assumed in this composition according to the variations of microstructure and electrical properties was 0.4-0.6wt%.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.21.1-21.1
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• 2006

• 한국세라믹학회지
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• 제33권11호
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• pp.1260-1266
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• 1996

The effects of SiO2 MnO2 and sintering atmospheres (O2, N2) on the piezoelectric properties and densification behaviors of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 were investigated. The addition of SiO2 to the system enhanced the rate of densification but supressed the rate of grain growth. On the other hand the addition of MnO2 to the system did not nearly affect the rate of densification but increased slightly the rate of grain growth The densification of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 was promoted with increasing the partial pressure of O2. The relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 sintered under O2 atmosphere were higher than under N2 atmosphere. Whereas the mechanical quality factor (Qm) of specimens sintered under O2 atmosphere were lower than under N2 atmosphere. Thus the sintering atmosphere of O2 and N2 in Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 acted as donor and acceptor respectively. As the amount of SiO2 increased the relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 but the mechanical quality factor (Qm) did not nearly change, In the case of the addition of MnO2 to the system the relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 sintered under O2 atmosphere decreased rapidly with increasing the amount of MnO2 but they were unchanged with increasing the amount of MnO2 under N2 sintering atmosphere. Therefore the differences of the relative dielect-ric constant ($\varepsilon$r) and piezoelectric constant (d33) due to sintering atmosphere were diminished as the amount of MnO2 increased.