• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• ETRI Journal
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• v.31 no.6
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• pp.642-646
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• 2009

Highly efficient white phosphorescent organic light-emitting diodes with a mixed-host structure are developed and the device characteristics are studied. The introduction of a hole-transport-type host (N, N'-dicarbazolyl-3-3-benzen (mCP)) into an electron-transport-type host (m-bis-(triphenylsilyl)benzene (UGH3)) as a mixed-host emissive layer effectively achieves higher current density and lower driving voltage. The peak external quantum and power efficiency with the mixed-host structure improve up to 18.9% and 40.9 lm/W, respectively. Moreover, this mixed-host structure device shows over 30% enhanced performance compared with a single-host structure device at a luminance of 10,000 $cd/m^2$ without any change in the electroluminescence spectra.

• International conference on construction engineering and project management
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• 2005.10a
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• pp.335-340
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• 2005

In many urban cities, mixed-use development is becoming increasingly essential for the creation of an attractive and sustainable environment that promotes economic vitality, social equity and environmental quality. Due to the differences in scale, scope and intent, certain aspects within the project delivery process of mixed-use are not the same as "conventional" single-use projects. The objective of this paper is to highlight these aspects. Two cases in Southeast Asia serve to illustrate the uniqueness and challenges of mixed-use. In conclusion, the differences between mixed-use and single-use are evident in terms of the diversity of team members, the necessity of multiple market analyses, and a multi-layer (versus single-source) financing structure. Finally, issues concerning ownership tangles, land assembly, planning and application procedures, investment criteria of institutions have been identified as major pitfalls.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.45-48
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• 2003

BiSrCaCuO thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.281-283
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• 2001

$Bi_{2}Sr_{2}CuO_{x}$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bearn sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition. two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit. then three dimensional growth takes place. Since Cu element is the most difficult to oxidize. only Sr and Bi react with each other predominantly. and forms a buffer layer on the substrate in an amorphous-like structure. which is changed to $SrBi_{2}O_{4}$ by in-situ anneal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.281-283
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• 2001

Bi$_2$Sr$_2$CuO$\_$x/(Bi-2201) thin films were fabricated layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to SrBi$_2$O$_4$ by in-situ anneal.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

• Proceedings of the Korean Geotechical Society Conference
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• 2009.03a
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• pp.805-812
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• 2009

Permeation water resulting in the reclaimed land of waste can possibly cause the second pollution, such as the underground water and environmental pollution. Accordingly, Liner layer has been installed in the reclaimed land of waste to block and purify permeation water and prevent this second pollution. The material used as Liner layer is the one for water resistance and that of less than permeability coefficient $1{\times}10^{-7}cm/sec$ is widely used. As it is very difficult to secure in bulk this natural clay with low permeability around the field, the suitable way to secure low permeable material is that we use blend with good watertighness by mixing it with natural soil which is spread in the site. While this mixed soil which can resist water is commonly used in the site, bentonite mixed soil which is widely used as Liner layer in the reclaimed land of waste is recognized in Liner and durability. In this study, the engineering characteristics of soil-bentonite mixed liner are investigated using the laboratory hydraulic conductivity and uni-axial strength tests. The soil used for the liner is the clay soil located near the site. Mixing ratio of the bentonite which satisfies the requirement of hydraulic conductivity is determined and the optimum mixing ratio of bentonite is recommended for the landfill. After the mixed liner is constructed using the optimum mixing ratio of bentonite, the block samples of the constructed liner are obtained and the strength tests were performed. The hydraulic and strength properties of the liner for construction of the waste landfill were both satisfactory.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.2
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• pp.105-113
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• 2014

The mode II fracture behavior of a single-layer graphene sheet (SLGS) containing a center crack was characterized with the results of an atomistic simulation and an analytical model. The fracture of zigzag graphene models was analyzed with molecular dynamics and the mode II fracture toughness was found to be $2.04MPa{\sqrt{m}}$. The in-plane shear fracture of a cellular material was analyzed theoretically for deriving the $K_{IIc}$ of SLGS, and FEM results were obtained. Mixed-mode fracture of SLGS was studied for various mode I and mode II ratios. The mixed-mode fracture criterion was determined, and the obtained fracture envelope was in good agreement with that of another study.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.9 no.2
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• pp.104-111
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• 1997

The freezing phenomenon of saturated water with the supercooled region in a horizontal circular cylinder has been studied experimentally by using the holographic real time interferometry technique. From the experiments, it was found that there were three types of freezing patterns. The first is the annular ice layer growing from the cylinder surface at a high cooling rate; the next is the asymmetric ice layer at a moderate cooling rate; and the last is the instantaneous ice layer growth over the full region at lower cooling rate. As the water was coolde from room temperature to the subfreezing point passing through the density inversion point, the freezing pattern was largely affected by the inversion phenomenon, which had much effected the free convection and was susceptible to influences from the cooling rate. When the cooling rate is high, supercooling energy is released before the water is sufficientry mixed by free convection. On the other hand, when the cooling rate is low, there is much time for the water to be mixed by free convection. This seems to be the reason why the different ice layer growths occur.