• Journal of the Korean Institute of Landscape Architecture
• /
• v.43 no.3
• /
• pp.77-91
• /
• 2015

This study aims to suggest adequate soil management through the analysis of physicochemical properties of soil in the planting grounds of Incheon International Airport, which was constructed on a massive land reclamation site. Study areas were 5 sites at the international business complex, the passenger terminal, the airport support complex, the free trade zone, and the access road. Soil profile analysis showed that 9 plots out of the 27 plots were hardpan and heterospere within 80cm from the soil surface. The earth laid on the ground was categorized as gravel based soil(4 plots), dredged soil from the sea bottom and mixed reclamation materials(2 plots), clay with poor permeability(3 plots) and waste construction material(1 plot). Average soil hardness was $11.5kg/cm^2$ and soil textures were sandy soil, sandy loam and loamy sand. Average soil pH was 6.7 and average organic matter content was 0.7%. Electrical conductivity was 0.0dS/m and exchangeable cation concentrations were $Ca^{2+}$ 3.4cmol/kg, $Mg^{2+}$ 1.5cmol/kg, $K^+$ 0.3cmol/kg and $Na^+$ 1.0cmol/kg. Average cation exchange capacity was 11.0cmol/kg. Although average figures in Solum mostly meet the landscape design criteria, properties of each soil layer showed various values sometimes over the limit. Base saturations were $Ca^{2+}$ 29.9%, $Mg^{2+}$ 13.3% and $K^+$ 3.7% for lower soil, $Ca^{2+}$ 33.3%, $Mg^{2+}$ 17.0% and $K^+$ 2.7% for mid-soil and $Ca^{2+}$ 32.6%, $Mg^{2+}$ 12.2% and $K^+$ 1.9% for upper soil. Exchangeable sodium percentages were 16.4% for lower soil, 7.5% for mid-soil and 4.7% upper soil. Sodium adsorption rates were 0.8 for lower soil, 0.3 for mid-soil and 0.2 for upper soil. Factors affecting to the vegetation growth were heterogeneity and poorness of solum, disturbance of dredged soils, high soil hardness including hardpan in the subsurface soil layer and shallow effective soil depth, high soil acidity, imbalance of base contents, low organic matter content and low available phosphate levels in the soil.

• Journal of Korean Society of Forest Science
• /
• v.86 no.2
• /
• pp.223-232
• /
• 1997

One hundred Sixty two quadrats were sampled from natural forests, in Kangwon-do and Kyungsangbuk-do. On the basis of Mueller-Dombois & Ellenberg method, field survey, which accounts for the characters of the species structure of Pinus densiflora community and Quercus mongolica community, was carried out between 1991 and 1994. To analyze the data, CCA ordination and D.B.H, analysis were used. 1. DBH analysis showed that Pinus densiflora community is likely replacing Quercus mongolica or Quercus variabilis community. DBH analysis also showed that Quercus mongolica - Lindera obtusiloba community balances among the Quercus mongolica, Fraxinus rhynchophylla, and Tilia amurensid in the canopy, and that Quercus mongolica-Abies nephrolepis community, mixed forest balances among the Quercus mongolica, Pinus koraiensis, and Abies nephrolepis in the canopy. In general, Quercus mongolica seems to remain as a dominant species. 2. A certain correlation seems to exist between nutrients types and Pinus densiflora community. Quercus mongolica prefered to grow in the medium elevation area that has medium level of total nitrogen, organic matter, and C.E.C. Pinus densiflora, Quercus serrata and Quercus variabilis were found in the low elevation area that has low level of total nitrogen, organic matter, and C.E.C. 3. There seemed to be a certain correlation between nutrients types and Quercus mongolica community. Quercus mongolica and Acer pseudosieboldianum was distributed in the slope area that has medium level of $Mg^{{+}{+}}$, $Ca^{{+}{+}}$, and C.E.C., while Abies nephrolepis, Taxus cuspidata and Pinus koraiensis in the high elevation and ridge area that has low level of $Mg^{{+}{+}}$, $Ca^{{+}{+}}$, and C.E.C. Carpinus laxiflora and Abies holophylla were found in the medium elevation area that has medium level of $Mg^{{+}{+}}$, $Ca^{{+}{+}}$, and C.E.C., while Kalopanax pious, Carpinus cordata and Acer truncatum in the moderately moist and valley area that has high level of $Mg^{{+}{+}}$, $Ca^{{+}{+}}$, and C.E.C. Pinus densiflora and Fraxinus rhynchophylla seemed to prefer the slightly dry, low elevation and ridge area.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.6
• /
• pp.283-290
• /
• 2013

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Applied Chemistry for Engineering
• /
• v.31 no.1
• /
• pp.43-48
• /
• 2020

Fe₂O₃ nanoparticles with the mixed structure of cubic and nanorod were synthesized by precipitation, hydrothermal, sol-gel method, etching process and heat treatment. Fe₂O₃/TiO₂ core-shell (CS) of type Fe₂O₃@TiO₂ composite was fabricated on a 20 nm nanolayer of TiO₂ coated on the surface of Fe₂O₃ nanoparticles. Fe₂O₃/TiO₂ yolk-shell (YS) composite was prepared by chemical etching and heat treatment of Fe₂O₃/TiO₂ CS nanoparticles. Physical properties of Fe₂O₃, Fe₂O₃@TiO₂ CS and Fe₂O₃@TiO₂ YS nanoparticles were characterized by FE-SEM, HR-TEM and X-ray diffraction. The solar reflectance, commission internationale de l'Elcairage (CIE) color coordinate and heat shield temperatures of Fe₂O₃, CS and YS type Fe₂O₃@TiO₂ pigments filled with poly acrylate (PA) paints were investigated by UV-Vis-NIR spectrometer and homemade heat shield temperature measuring device. The Fe₂O₃@TiO₂ YS red pigment filled PA composite exhibited excellent near infrared light reflecting performance and also reduced the heat shield temperature of 13 ℃ than that of Fe₂O₃ filled counterparts.

• Maxillofacial Plastic and Reconstructive Surgery
• /
• v.31 no.3
• /
• pp.243-248
• /
• 2009

Purpose: Rehabilitation of the edentulous posterior maxilla with dental implants often poses difficulty because of insufficient bone volume caused by pneumatization of the maxillary sinus and by crestal bone resorption. Sinus grafting technique was developed to increase the vertical height to overcome this problem. The present study was designed to evaluate the sinus floor augmentation with anorganic bovine bone (Bio-$cera^{TM}$) using histomorphometric and clinical measures. Patients and methods: Thirteen patients were involved in this study and underwent total 14 sinus lift procedures. Residual bone height was ${\geq}2mm$ and ${\leq}6mm$. Lateral window approach was used, with grafting using Bio-$cera^{TM}$ only(n=1) or mixed with autogenous bone from ramus and/or maxillary tuberosity(n=13). After 6 months of healing, implant sites were created with 3mm diameter trephine and biopsies taken for histomorphometric analysis. The parameters assessed were area fraction of new bone, graft material and connective tissue. Immediate and 6 months after grafting surgery, and 6 months after implantation, computed tomography (CT) was taken and the sinus graft was evaluated morphometric analysis. After implant installation at the grafted area, the clinical outcome was checked. Results: Histomorphometry was done in ten patients.Bio-$cera^{TM}$ particles were surrounded by newly formed bone. The graft particles and newly formed bone were surrounded by connective tissue including small capillaries in some fields. Imaging processing revealed $24.86{\pm}7.59%$ of new bone, $38.20{\pm}13.19%$ connective tissue, and $36.92{\pm}14.51%$ of remaining Bio-$cera^{TM}$ particles. All grafted sites received an implant, and in all cases sufficient bone height was achieved to install implants. The increase in ridge height was about $15.9{\pm}1.8mm$ immediately after operation (from 13mm to 19mm). After 6 months operation, ridge height was reduced about $11.5{\pm}13.5%$. After implant installation, average marginal bone loss after 6 months was $0.3{\pm}0.15mm$. Conclusion: Bio-$cera^{TM}$ showed new bone formation similar with Bio-$Oss^{(R)}$ histomorphometrically and appeared to be an effective bone substitute in maxillary sinus augmentation procedure with the residual bone height from 2 to 6mm.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.2
• /
• pp.197-206
• /
• 1999

The stochiometric mixture of evaporating materials for the $AgInSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the $AgInSe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $C_0$ were 6.092 $\AA$ and 11.688 $\AA$, respectively. To obtain the single crystal thin films of AgInSe$_2$, the mixed crystal was deposited on thoroughly etched semi-insulator GaAs(100) substrate by HWE system. The source and substrate temperature were fixed to $610^{\circ}C$ and $450^{\circ}C$ respectively, and the thickness of the single thin films was obtained to 3.8 $\mu\textrm{m}$. The crystallization of single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray dirrfaction (DCXD). The Hall effect was measured by the method of van der Pauw and carrier density and mobility dependence on temperature were studied. The carrier density and mobility of $AgInSe_2$single crystal thin films deduced from Hall data are $9.58{\times}10^{22} electron/m^3,\; 3.42{\times}10^{-2}m^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInSe_2$single crystal thin film, the spin orbit coupling $\Delta$So and the crystal field splitting $\Delta$Cr were obtained to 0.29 eV and 0.12 eV at 20 K respectively. From PL peaks measured at 20 K, 881.1 nm (1.4071 eV) and 882.4 nm (1.4051 eV) mean $E_x^U$ the upper polariton and $E_x^L$ the lower polariton of the free exciton $(E_x)$, also 884.1 nm (1.402 eV) express $I_2 peak of donor-bound exciton emission and 885.9 nm (1.3995 Ev) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 887.5 nm (1.3970 eV) was analyzed to be PL peak due to DAP.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.6
• /
• pp.253-257
• /
• 2008

To enhance the luminescence properties, the red phosphor composed of $(Y,\;Zn)_2O_3$:$Eu^{3+}$ as doping concentration of Zn ion is synthesized at $1200^{\circ}C$ for 6 hrs in air atmosphere by conventional solid reaction method. As a result of the red phosphor $(Y,\;Zn)_2O_3$:$Eu^{3+}$ is measured X-ray diffraction (XRD), The main peak is nearly corresponded to the same as JCPDS card (No. 41-1105). When the doping concentration of Zn ion is more than 5 mol%, However, the ZnO peak is showed by XRD analysis. Therefore, when the doping concentration of Zn ion is less than 5 mol%, the Zn ion is well mixed in $Y_2O_3$ structure without the impurity phases. The photoluminescence (PL) properties is shown as this phosphor is excited in 254 nm region and the highest emission spectra of $(Y,\;Zn)_2O_3$:$Eu^{3+}$ has shown in 612 nm region because of a typical energy transition ($^5D_0{\rightarrow}^7F_2$) of $Eu^{3+}$ ion. As the doping concentration of Zn ion is more than 10 mol%, the emission peak is suddenly decreased. when the highest emission peak as doping concentration of Zn ion is shown, the composition of this phosphor is $(Y_{0.95},\;Zn_{0.05})_2O_3$:$Eu^{3+}_{0.075}$ and the particle size analyzed by FE-SEM is confirmed from 0.4 to $3{\mu}m$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.5
• /
• pp.217-224
• /
• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Applied Chemistry for Engineering
• /
• v.9 no.6
• /
• pp.870-877
• /
• 1998

With impedance spectrum measurements, impedance was studied in the interface between sample solutions for $K^+-ion$ selective PVC membrane electrode containing neutral carriers [dibenzo-18-crown-6 (D18Cr6) and valinomycine (Val)]. Response characteristics of electrode were examined by measuring AC impedance spectra that were resulted from the chemical structure and the content of carrier, variation of plasticizer, membrane thickness, doping of base electrolytes, and concentration variation of sample solution. Transport characteristics of PVC membrane electrode were also studied. It was found that the equivalent circuit for the membrane in $K^+$ solution could be expressed by a series combination of solution resistance and a parallel circuit consisting of the bulk resistance and geometric capacitance of the membrane system. But the charge transfer resistance and Warburg resistance were overlapped a little in the low concentration and low frequency ranges. The carrier, D18Cr6 was best for electrode and impedance characteristics, and ideal electrode characteristics were appeared especially in case of doping of the base electrolyte[potassium tetraphenylborate(TPB)]. The optimum carrier content was about 3.23 wt% in case of D18Cr6 and Val. DBP was best as a plasticizer. As membrane thickness decreased the impedance characteristics was improved, but electrode characteristics were lowered for membrane thickness below the optimum. In the case of D18Cr6, the selectivity coefficients by the mixed solution method for the $K^+$ ion were the order of $NH_4{^+}>Ca^{2+}>Mg^{2+}>Na^+$.

• Journal of Sensor Science and Technology
• /
• v.11 no.5
• /
• pp.309-318
• /
• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.