• Journal of the Korean Society of Clothing and Textiles
• /
• v.29 no.3_4 s.141
• /
• pp.449-461
• /
• 2005

The purpose of this study is to rediscover the hidden value of non-mainstreamers style which has been overlooked for the past decade by investigate the aesthetics and formative features of the Grunge fashion. The Grunge fashion was derived from explosive popularity of the early 90's grunge music. Grunge was the alternative anti-thesis against mainstream pop music and anti-fashion against mainstream fashion. Dirty, rubbish grunge style of the poor street youth and grunge musicians have raised to the high fashion by designers. And These trial of designers made people to notice the value of the non-mainstreamers street style like grunge. Actually, the grunge brought the shock with many argument to the 90's fashion field. But now, It became the classic of the street fashion. And It has potent influence on the music, culture and high fashion. The Grunge is a kind of links between music and fashion, street fashion and high fashion, sub culture and mainstream culture, the past and now. Grunge isn't only a fashion of appearance. It is the attitude of wearing clothes and living a life. Variety grunge style in the international street fashion, high fashion, typical musicians's fashion of the 1990's and the 2000's was researched for this study. These materials were gathered from music magazines, fashion magazines, movies, musics and books. As a results of analysis, Grunge has the formative features like mix & match, layering, patchwork, primitive edge, rag, retro, recycle, kinderwhore, sneer scribbling, disheveled hair. Grunge also has the Aesthetic features like the beauty of $disorder{\cdot}\;disharmony{\cdot}\;incompleteness{\cdot}\;kitsch{\cdot}\;poverty{\cdot}\;alternative{\cdot}\;eclectic{\cdot}$symbiosis. For the last 10 years, These features changed our fashion be more pluralistic and dynamic.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.1
• /
• pp.61-64
• /
• 1994

The NMOSFET with gate length of 0.1$\mu$m is fabricated by mix-and-match method. In this device, the electron beam lithography is used to form the gate layer, while other layers are formed by the stepper. The gate oxide is 7nm thick, and the device structure is normal LDD structure. The saturation Gm for gate length of 0.1$\mu$m is 246mS/mm. The subthreshold slope is 180mV/decade for 0.1$\mu$m gate length, but the slope is 80mV/decade for 0.3$\mu$m gate length.