• 제목/요약/키워드: Misfit

검색결과 147건 처리시간 0.035초

초전도 박막의 에피택셜 성장에 관한 연구 (A Study on the Epitaxial Growth of Superconducting Thin Film)

  • 이희갑;박용필;김귀열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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    • pp.208-211
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    • 2002
  • $Bi_2Sr_2CuO_x$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

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순차 스퍼터 법에 의한 BSCCO 박막의 특성 (Characteristics of BSCCO Thin Film by Layer-by-layer Deposition)

  • 이희갑;박용필;김귀열;오금곤;최운식;조춘남
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.281-283
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    • 2001
  • $Bi_{2}Sr_{2}CuO_{x}$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bearn sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition. two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit. then three dimensional growth takes place. Since Cu element is the most difficult to oxidize. only Sr and Bi react with each other predominantly. and forms a buffer layer on the substrate in an amorphous-like structure. which is changed to $SrBi_{2}O_{4}$ by in-situ anneal.

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첨단재료의 기술혁신 특성과 한국의 연구개발전략 (Characteristics of Advanced Materials Innovation and R&D Strategies for Korea)

  • 채재우;조규갑;김정흠
    • 기술혁신학회지
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    • 제6권4호
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    • pp.492-507
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    • 2003
  • Material is enabling technology that creates the product performance and the service of most industrial sectors and fields of technology. However, compared to the other fields such as IT, BT, and NT etc., relatively little attention has been paid to the research on strategy and innovation of materials technology. This bias should have resulted in the misfit of policy and less than enough investment in materials innovation. This paper discusses the characteristics, process, and future of the materials innovation. The process and status of materials technology in Korea are analyzed based on the discussions above. Finally, some suggestions for R&D strategies of Korea are presented on the basis of the nature, trend and barriers of materials innovation.

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순차 스퍼터 법에 의한 BSCCO 박막의 특성 (Characteristics of BSCCO Thin Film by Layer-by-layer Deposition)

  • 이희갑;박용필;김귀열;오금곤;최운식;조춘남
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.281-283
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    • 2001
  • Bi$_2$Sr$_2$CuO$\_$x/(Bi-2201) thin films were fabricated layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to SrBi$_2$O$_4$ by in-situ anneal.

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초저속 순차증착으로 제작한 Bi2212 박막의 특성 (Characteristics of Bi2212 Thin Film Fabricated by Layer-by-Layer Deposition at an Ultra Low Growth rate)

  • 이희갑;박용필;천민우
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.119-121
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    • 2002
  • $Bi_2Sr_2CuO_x$ thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method, 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

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In Situ Spectroscopy in Condensed Matter Physics

  • Noh, Tae Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.92-92
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    • 2014
  • Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

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나사유지형 임플란트 고정성 보철물의 적합도와 캔틸레버가 지지골조직의 응력분산에 미치는 영향 (The Effects of Screw Retained Prosthesis Misfit & Cantilever on Stress Distribution in Bone Around the Implant)

  • 이재인;김태영;조혜원
    • 구강회복응용과학지
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    • 제29권3호
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    • pp.224-235
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    • 2013
  • 임플란트의 장기적인 성공을 위해 고정체의 형태, 외과적 술식, 골조직의 조건, 보철물 적합성, 주기적인 검사, 환자의 구강 위생 등에 많은 주의가 필요하다. 많은 연구에서 임플란트 지지 보철물의 적합도에 따른 임플란트의 예후에 관해 보고되었다. 보철물이 수동 적합되어야 임플란트의 상부구조및 하부구조에 해로운 응력을 야기하지 않는다고 보고되고 있으나 현재의 임플란트 보철물의 제작과정으로 진정한 수동 적합을 얻는 수 없다고 인정된다. 임상과정과 기공과정을 포함하여 임플란트 치료의 전 과정에서 오차가 발생하며, 이는 보철물을 변형을 야기하고 이는 임플란트 상부 보철물과 지대주 사이의 오차를 발생시킨다. 이러한 오차는 보철물 장착 후 보철물의 파절, 나사의 헐거움(screw loosening), 골소실, 골유착 실패와 같은 문제를 야기한다. 이런 오차에 의한 문제점은 cantilever의 존재, 과도한 교합력이 존재할 경우 더욱 증가된다고 보고되고 있다. 본 연구에서는 ITI 임플란트를 하악골의 견치후방의 무치악부에 3개를 식립하고 4-unit 캔틸레버 고정성 국소의치를 다양한 위치의 $100{\mu}m$ gap을 생성한 후 제작하고 gap을 생성하지 않은 고정성 국소의치와 30 lb의 하중하에서 광탄성 응력분석을 시행하여 응력분포 양상과상대적인 응력의 크기를 비교분석하였다.

GaAs기판의 표면 Offcut각도가 InGaP 에피막의 전위밀도에 미치는 영향 (Effects of Surface Offcut Angle of GaAs Substrate on Dislocation Density of InGaP Epilayers)

  • 이종원;박경수;이종식
    • 마이크로전자및패키징학회지
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    • 제9권3호
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    • pp.49-56
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    • 2002
  • 본 연구에서는 평탄형 (exact) GaAs 기판과 $2^{\circ}$, $6^{\circ}$, $10^{\circ}$ 경사형 (offcut) GaAs 기판 등 네 종류의 기판에 유기금속 기상성장장치를 이용하여 InGaP 에피막을 성장시켰고, 기판경사도에 따른 계면의 탄성특성이 InGaP 에피막의 전위밀도에 미치는 영향에 대하여 최초로 연구하였다. 탄성변형은 TXRD의 격자부정합과 격자 misfit등을 고려하여 산출되었고, 전위밀도는 에피막의 x-선 반치폭을 이용하여 계산되었다. 기판경사도가 $6^{\circ}$일 때 계면의 탄성특성이 가장 양호하였고, x-선 반치폭은 가장 낮았다. 11 K PL측정 결과, 기판경사도 증가에 따라 PL 발진파장은 감소하였고, 기판경사도가 $6^{\circ}$에서 PL 강도 역시 가장 높았다. 에피막의 TEM 관측 결과, 회절패턴은 전형적인 zincblende 구조를 보였고, 기판경사도 $6^{\circ}$에서 전위밀도가 가장 낮게 관측되어 TXRD 및 저온 PL측정 결과와 부합되었다. 본 연구의 결과와 소자제작 특성 및 빔특성을 종합적으로 고려해 볼 대, 광전소자용 InGaP/GaAs 이종접합구조에서 최적의 기판경사도는 $6^{\circ}$임을 밝혔다.

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Si (001) 기판에서 $N_2$처리에 의해 형성된 에피택셜 C49-$TiSi_2$상의 열적 거동과 결정학적 특성에 관한 연구 (Thermal Behavior and Crystallographic Characteristics of an Epitaxial C49-$TiSi_2$ Phase Formed in the Si (001) Substrate by $N_2$Treatment)

  • 양준모;이완규;박태수;이태권;김중정;김원;김호정;박주철;이순영
    • 한국재료학회지
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    • 제11권2호
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    • pp.88-93
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    • 2001
  • $N_2$처리에 의해 Si (001) 기판에 형성된 C49상의 구조를 갖는 에피택셜 $TiSi_2$상의 열적 거동과 결정학적 특성을 X선 회절법 (XRD)과 고분해능 투과전자현미경법 (HRTEM)으로 조사하였다. 에피택결 $C49-TiSi_2$상은 $1000^{\circ}C$ 정도의 고온에서도 안정상인 C54상으로 상변태하지 않고 형태적으로도 고온 특성이 우수하다는 것이 밝혀졌다. HRTEM 결과로부터 에피택결 $TiSi_2$상과 Si 사이의 결정학적 방위관계는 (060) [001]TiSi$_2$//(002) [110]Si임을 알 수 있었고 계면에서의 격자 변형에너지는 misfit 전위의 형성에 의하여 해소되는 것을 확인할 수 있었다. 또한 HRTEM상의 해석과 원자 모델링을 통하여 Si에서 에피택셜 C49-TiSi$_2$상의 형성기구와 C49상의 (020) 면에 존재하는 적층결함을 고찰하였다.

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뇌졸중 환자를 대상으로 실시한 한글판 기능적 보행평가의 타당도 (Validation of the Korean Functional Gait Assessment in Patients With Stroke)

  • 박소연
    • 한국전문물리치료학회지
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    • 제23권2호
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    • pp.35-43
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    • 2016
  • Background: The Functional Gait Assessment (FGA) was developed to measure of gait-related activities. The FGA was translated in Korean but only a few psychometric characteristics had been studied. Objects: The purpose of this study was to evaluate the validity and reliability of the Korean version of FGA scale using Rasch analysis. Methods: The study included 120 patients with stroke (age range=30~83 years; mean${\pm}$standard deviation=$58.3{\pm}11.1$). The FGA and Berg Balance Scale were performed, and were analysed for dimensionality of the scale, item difficulty, scale reliability and separation, and item-person map using Rasch analysis. Results: The 4 rating scale categories of FGA were satisfied with optimal rating scale criteria. The most items of the FGA showed sound item psychometric properties except 2 items ('gait with the horizontal head turns', and 'gait with narrow base of support'), and the 2 misfit items were excluded for all further analyses. The 8 items were arranged in order of difficulty. The most difficult item was 'gait with eyes closed', the middle difficult item was 'gait level surface', and the easiest item was 'gait with vertical head turns.' A person separation reliability was .93 and the person separation index was 3.57. Conclusion: This study suggests that the 8-item Korean FGA are valid measure of assess the gait-related balance performance, and to set the goal of rehabilitation plan in patient with stroke.