• 센서학회지
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• 제27권5호
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• pp.275-279
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• 2018

In this study, we introduce a sensing platform based on a plasmonic metasurface absorber (MA) with a vertical nanogap for the ultrasensitive detection of monolayer molecules. The vertical nanogap of the MA, where the extremely high near-field is uniformly distributed and exposed to the external environment, is formed by an under-cut structure between a metallic cross nanoantenna and the mirror layer. The accessible sensing area and the enhanced near-field of the MA further enhance the sensitivity of surface-enhanced infrared absorption for the target molecule of 1-octadecanethiol. To provide strong coupling between the molecular vibrations and plasmonic resonance, the design parameters of the MA with a vertical nanogap are numerically designed.

• 한국광학회지
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• 제8권2호
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• pp.111-115
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• 1997

광통신의 파장(1.3.mu.m)에서 동작하는 수직공진 표면광 반도체 레이저를, InGaAsP(.lambda.$_{g}$=1.3.mu.m)이득매질의 에피충돌 양면에 Si/SiO$_{2}$ 유전체 반사경을 증착하여 제작하였다. 제작된 수직공진 반도체 레이저를 Nd-YAG 레이저의 펄스로 광펌핑하여 1.3mu.m근처 파장에서 레이저 동작을 확인하였다. 그리고, 반사율에 따른 문턱 펌프량의 변화, 편광특성 및 펌프광점의 크기에 따른 문턱 펌핑 밀도의 변화 등의 레이저 동작 특성을 조사하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.1009-1014
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• 1997

The small material removal rate of elastic emission machinong (EEM) becomes a serious problem due to using fine powder particles for obtaining finished of high quality. If a cylindrical polyurethane-wheel is used as a tool for accelerating powder particles, the efficiency of machining may be increased through enlarging the machining regionand increasing the surface velocity of the wheel. If these analyicl results are compared with experimental ones, characteristics of EEM using polyurethan-wheel can be clarified. In this study, effects of EEM using cylindrical polyurethane-wheel on the surface roughness and the material removal rate were verified through polishing of the brittle material under various conditions. The high-efficient polishing of silicon wafer has been also carried out using this method.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 추계학술대회 논문집
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• pp.875-878
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• 1997

Electrical discharge machining is the method of using thermal energy by electrical discharge. Generally, if the material of workpiece has conductivity even though it is very hard material and complicated shape which are difficult to cut such as quenching steel, cemented carbide, diamond and conductive ceramics, the EDM is favorable one of possible machining processes. But, the process is necessarily required of finish cut and heat treatment because of slow cutting speed, no mirror surface, brittleness and crack due to the residual stress for manufactured goods.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.921-926
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• 1997

SOI(Silicon On lnsulator) technology is many advantages in the gabrication of MOS(Metal-Oxide Semiconductor) and CMOS(Complementary MOS) structures. These include high speed, lower dynamic power consumption,greater packing density, increased radiation tolearence et al. In smiple form of bonded SOL wafer manufacturing, creation of a bonded SOI structure involves oxidizing at least one of the mirror polished silicon surfaces, cleaning the oxidized surface and the surface of the layer to which it will be bonded,bringing the two cleanded surfaces together in close physical proximity, allowing the subsequent room temperature bonding to proceed to completion, and than following this room temperature joining with some form of heat treatment step,and device wafer is thinned to the target thickness. This paper has been performed to investigate the possibility of the bonded SOI wafer manufacturing Especially, we focused on the bonding quality and thinning method. Finally,we achieved the bonded SOI wafer that Si layer thickness is below 3 .mu. m and average roughness is below 5.angs.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2000년도 춘계학술대회논문집 - 한국공작기계학회
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• pp.435-440
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• 2000

In this study, we aims to develop the machining technology for the ultra precision surface and profile accuracy. For this purpose, we construct the electrolytic in process grinding system (ELID grinding) and apply to the cylindrical and internal grinding. Through the various machining experiments such as SCM steel., ceramics, tungsten carbide etc., we have obtained nanometer surface roughness. And we have applied this mirror grinding technique to hydraulic manual valve and mold core of mini disk optical pick-up base. For the development of fine mechanical part machining technology, e have made multi fiber optical connector using fine grinding technology. And constructed micro drilling system with process monitoring system which is possible to drill 50${\mu}{\textrm}{m}$ diameter hole.

• 대한기계학회논문집
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• 제16권12호
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• pp.2279-2286
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• 1992

본 연구에서는 절삭가공만으로 실리콘 석출을 위한 경면가공을 얻기위한 최적 의 조건을 찾고자 한다.

• 한국결정성장학회지
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• 제10권5호
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• pp.350-355
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• 2000

수평 Bridgeman방식으로 성장된 C축 방향의 사파이어 결정기판을 연마 가공하였으며, 또한 유기금속 기상화학 증착 방법으로 사파이어 기판 위에 GaN 박막을 증착하였다. 사파이어 인고트를 성장하여 2인치 사파이어 기판으로 이용하였으며 웨이퍼 절편장치 및 연마장치를 개발하였다. 이러한 다단계의 연마 가공은 기판 표면을 경면화하였다. 표면 평탄도 및 조도는 원자힘현미경으로 측정하였다. 개발된 사파이어 기판위에 성장된 GaN 박막의 특성 및 청색광소자로의 응용 가능성을 확인하였다.

• 통합자연과학논문집
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• 제6권2호
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• pp.82-86
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• 2013

This paper describes a method for the preparation of porous polymethylmethacrylate showing optical reflectivity from the porous silicon template. A porous polymethylmethacrylate showing optical reflectivity was prepared by replicating porous silicon template which was obtained by applying a computer-generated periodic square current density and resulted in a mirror with high reflectivity in a specific narrow spectral region. A porous polymethylmethacrylate showing an excellent reflectivity was successfully obtained by dissolving the Porous silicon template from the porous polymethylmethacrylate composite film. A porous polymethylmethacrylate exhibited a sharp reflection resonance in the reflectivity spectrum. Surface image of the porous polymethylmethacrylate indicated that the surface of the porous polymethylmethacrylate film had a porous structure. These porous polymethylmethacrylate films in aqueous solutions were stable for several days without any degradation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1313-1314
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• 2006

The polycrystalline 3C-SiC thin films heteroepitaxially grown by LPCVD method using single precursor 1,3-disilabutane at $850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XRD and FT-IR. Residual strain was investigated by Raman scattering. The surface morphology was also observed by AFM and voids or dislocations between SiC and $SiO_2$ were measured by SEM. The grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS applications.