• Title/Summary/Keyword: Minimum Surface Temperture

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Numerical Analysis on the Autoignition of Hydrogen/Air Mixture Near a Hot Surface (고온벽면에 의한 수소-공기 예혼합기체의 자연발화에 관한 수치적 해석)

  • 박은성;백승욱
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.16 no.1
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    • pp.70-76
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    • 1992
  • Ignition of hydrogen-air premixed gas in the vicinity of a hot surface has been investigated. Especially multistep reaction model was compared with a single reaction model. It was found that the multistep model with 48 step elementary chemical reactions produced a phenomenologically reasonable trend in ignition delays. The ignition d(2lays increase as the mixture becomes either fuel-rich or fuel-lean with a minimum near the stoichiometric value. The minimum surface temperature has been deduced by extrapolating predicted ignition delays. It was in quite good agreement with the experimental data.

Preparation of SnO$_2$ Thin Films by Chemical Vapor Deposition Using Hydrolysis of SnCla$_4$ and Gas-sensing Characterisics of the Film -Effect of Deposition Variables on the Deposition Behavior and the Electrical Resistivity of SnO$_2$ Thin Film- (SnCl$_4$가수분해 반응의 화학증착법에 의한 SnO$_2$박막의 제조 및 가스센서 특징(I) Preparation of SnO2 Thin Films by chemical Vapor Deposition Using Hydrolysis of SnCl4 and gas-sensing characteristics of the Film)

  • 김용일;김광호;박희찬
    • Journal of the Korean institute of surface engineering
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    • v.23 no.2
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    • pp.18-23
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    • 1990
  • Thin films of tin oxide were prepared by chemical vapor deposition (C.V>D) using the hydrolysis reaction of SnCl4, Deposition rate increased with the increase of temperature up to $500^{\circ}C$and then decreased at $700^{\circ}C$, Deposition rate with SnCl4 partial pressure showed RidealEley behavir. It was found that SnO2 thin film deposited at the temperature above $400^{\circ}C$ had(110) and (301) plane preferred orientation with crystallinity of rutite structure. Electrical resisvity of SnO2 thin film decreased with increase increase of deposition temperature and showed minimum value of 10-3 ohm at $500^{\circ}C$and than largely increased increased with further increase of deposition temperture.

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