• 대한기계학회논문집
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• 제16권1호
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• pp.70-76
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• 1992

본 연구에서는 수소와 공기의 예혼합기체가 가열된 벽면에 노출되어 있는 경 우의 점화문제를 1차원 비정상상태로 예측하고자 하며 특히, 계산에서 가정하는 화학 반응기구가 갖는 정확성에 관하여 수치해석적으로 고찰하고자 한다.

• 한국표면공학회지
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• 제23권2호
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• pp.18-23
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• 1990

Thin films of tin oxide were prepared by chemical vapor deposition (C.V>D) using the hydrolysis reaction of SnCl4, Deposition rate increased with the increase of temperature up to $500^{\circ}C$and then decreased at $700^{\circ}C$, Deposition rate with SnCl4 partial pressure showed RidealEley behavir. It was found that SnO2 thin film deposited at the temperature above $400^{\circ}C$ had(110) and (301) plane preferred orientation with crystallinity of rutite structure. Electrical resisvity of SnO2 thin film decreased with increase increase of deposition temperature and showed minimum value of 10-3 ohm at $500^{\circ}C$and than largely increased increased with further increase of deposition temperture.