• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.12-19
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• 1993

Because of their high sensitivity and moderate bandwidth, superconducting receivers with SIS (Superconductor Insulator Superconductor) tunnel junction mixer are now widely used for millimeter wave radio astronomy. In this paper we have introduced how to determine the parameters of SIS tunnel junction which have to be optimized to achieve a good mixer performance. From these results of optimized junction parameters determined by this methods, SIS junctions which consist of a series array of four Nb/Al-AlOx/Nb junctions with each area 3.4${\mu}m^{2}$ have been fabricated by SNEP (Selective Niobium Etching Process) and RIE (Reactive Ion Eching). Also we have tested their DC current-voltage characteristics. These SIS junctions will be used as a mixer for 100GHz band cosmic waves receiver.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.339-342
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• 2004

본 논문은 밀리미터파 대역 무선통신 시스템 송신부의 응용을 위해 CPW 구조를 이용하여 V-band용 상향 주파수 혼합기와 2단 구동증폭기를 설계$\cdot$제작하였다. 능동소자는 본 연구실에서 제작한 $0.1{\mu}m$ 게이트 GaAs Pseudomorphic HEMTs(PHEMTs)를 사용하였으며 입$\cdot$출력단은 CPW를 사용해 정합 회로를 설계하였다. 제작된 상향 주파수 혼합기는 LO power 5.4 dBm, 2.4 GHz IF 신호를 -10.25 dBm으로 입력하였을 때 Conversion Loss 1.25 dB, LO-to-RF Isolation은 58 GHz에서 13.2 dB의 특성을 나타내었다 2단 구동 증폭기는 측정결과 60 GHz에서 S21 이득 13 dB, $58\;GHz\;\~\;64\;GHz$ 대역에서 S21 이득 12 dB 이상을 유지하는 광대역 특성을 얻었고 증폭기의 Pl dB는 3.8 dBm, 최대 출력전력은 6.5 dBm의 특성을 얻었다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.11
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• pp.48-53
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• 2007

In this paper, a high LO-RF isolation W-band MIMIC single-balanced mixer was designed and fabricated using a branch line coupler and a ${\lambda}/4$ transmission line. The W-band MIMIC single-balanced mixer was designed using the $0.1\;{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT diode. The fabricated MHEMT was obtained the cut-off frequency($f_T$) of 154 GHz and the maximum oscillation frequency($f_{max}$) of 454 GHz. The designed MIMIC single-balanced mixer was fabricated using $0.1\;{\mu}m$ MHEMT MIMIC process. From the measurement, the conversion loss of the single-balanced mixer was 12.8 dB at an LO power of 8.6 dBm. P1 dB(1 dB compression point) of input and output were 5 dBm and -8.9 dBm, respectively. The LO-RF isolations of single-balanced mixer was obtained 37.2 dB at 94 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.213-217
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• 2001

본 논문에서는 CPW 구조를 이용하여 60 GHz 무선 시스템 응용을 위한 V-band용 하향 주파수 혼합기를 설계 및 제작하였다. 하향 주파수 혼합기의 설계 및 제작에 있어서 GaAs PHEMT(Pseudomorphic high electron mobility transistor)를 기반으로 하였으며, 회로설계를 위해 coplanar waveguide(CPW) 라이브러리를 구축하여 이용하였다. 제작된 하향 주파수 혼합기의 변환이득은 국부발진주파수(LO) 입력이 8 dBm일 때 -8.5 dB의 최대 변환이득 특성을 얻었으며 Pl dB는 -3.3 dBm을 얻었다. 제작된 회로의 칩 크기는 1.6$\times$l.6 $\textrm{mm}^2$ 이다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.8-15
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• 2006

In this paper, the 94 GHz, low conversion loss, and high isolation single balanced mixer is designed and fabricated using GaAs-based metamorphic high electron mobility transistors (MHEMTs) with 70 nm gate length and the hybrid ring coupler with the micromachined transmission lines, dielectric-supported air-gapped microstrip lines (DAMLs). The 70 nm MHEMT devices exhibit DC characteristics with a drain current density of 607 mA/mm an extrinsic transconductance of 1015 mS/mm. The current gain cutoff frequency ($f_T$) and maximum oscillation frequency ($f_{max}$) are 320 GHz and 430 GHz, respectively. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of $3.57{\pm}0.22dB$ and the transmission loss of $3.80{\pm}0.08dB$ in the measured frequency range of 85 GHz to 105 GHz. This mixer shows that the conversion loss and isolation characteristics are $2.5dB{\sim}>2.8dB$ and under -30 dB, respectively, in the range of $93.65GHz{\sim}94.25GHz$. At the center frequency of 94 GHz, this mixer shows the minimum conversion loss of 2.5 dB at a LO power of 6 dBm To our knowledge, these results are the best performances demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• 한국초전도학회:학술대회논문집
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• v.14
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• pp.9-9
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• 2004

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.921-924
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• 2005

We report low conversion loss and high LO to RF isolation 94 GHz MMIC resistive mixers based on 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The fabricated resistive mixers applied a one-stage amplifier on RF port of the mixer. By using the one-stage amplifier, we obtained the decrement of conversion loss and the increment of LO to RF isolation. So, we can obtain higher performances than conventional resistive mixers. The modified mixer shows excellent conversion loss of 6.7 dB at a LO power of 10 dBm. We also observed an extremely high isolation characteristic from the MMICs exhibiting the LO-RF isolation of 21 ${\pm}$ 0.5dB in a frequency range of 93.7${\sim}$ 94.3 GHz. The low conversion loss and high LO-RF isolation characteristics of the MMIC modified resistive mixers are mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 654 mS/mm, a current gain cut-off frequency of 173 GHz and a maximum oscillation frequency of 271 GHz.

• Journal of Astronomy and Space Sciences
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• v.23 no.1
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• pp.19-28
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• 2006

The noise temperature of existing millimeter-wave receivers is already within two or three times quantum noise limit. One of practical ways to increase the observation speed of single dish radio telescope without longer integration time is use of multi-beam focal plane array receiver as demonstrated in several large single dish radio telescopes. In this context the TRAO (Taeduk Radio Astronomy Observatory), which operates a 143n Cassegrain radio telescope, is planning to develop a 4 x 4 beams focal plane array SIS receiver system for 86-115 GHz band. Even though millimeter-wave HEMT LNA-based receivers approach the noise temperature comparable to the SIS receiver at W-band, it is believed that the receiver based on SIS mixer seems to offer a bit more advantages. The critical part of the multi-beam array receiver will be sideband separating SIS mixers. Employing such a type of SIS mixer makes it possible to simplify the quasi-optics of receiver. Otherwise, an SSB filter should be used in front of the mixer or some sophisticated post-processing of observation data is needed. In this paper we will present a preliminary design concept and components needed for the development of a new 3 mm band multi-beam focal plane array receiver.

• Journal of Sensor Science and Technology
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• v.25 no.1
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• pp.8-12
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• 2016

A planar, light-weight, and low-cost notch filter structure is required for the KSTAR ECEI (Electron Cyclotron Emission Imaging) system to protect the mixer arrays from spurious plasma heating power. Without protection, this heating power can significantly degrade or damage the performance of the mixer array. To protect mixer arrays, a frequency selective surface (FSS) structure is the suitable choice as a notch filter to reject the spurious heating power. The FSS notch filter should be located between the lenses of the ECEI system. This paper presents a 170 GHz FSS notch filter for the KSTAR ECEI sensor application. The design of such an FSS notch filter is based on the single-sided square loop geometry, because that makes it relatively insensitive to the incident angle of incoming wave. The FSS notch filter exhibits high notch rejection with low pass-band insertion loss over a wide range of incident angles. This paper also reviews the simulated and measured results. The proposed FSS notch filter might be implemented in other millimeter-wave plasma devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.11
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• pp.1318-1323
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• 2010

A lot of demand for parts of millimeter wave band, as would be expected 57~63 GHz band down conversion mixer was designed and fabricated using IHP 0.25 um SiGe process. Designed and fabricated mixer was double balanced type and located reduced 3D balun at RF port and buffer amplifier at outport for suppression LO signal and conversion gain. Fabricated mixer measured conversion gain of 13.8 dB, $P1dB_{in}$ -17 dBm and 88 mA of current consumption characteristics, respectively.