• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.491-492
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• 2006

The MMIC (Microwave Monolithic Integrated Circuit) self oscillating double conversion mixer was designed and fabricated for the V-band transmitter applications. The MMIC self oscillating double conversion mixer which dose not need external local oscillator was designed using GaAs PHEMT technology. The first self oscillating mixer use PHEMT technology. The first self oscillating mixer use PHEMT for $f_{LO}$ signal generation and $f_{IF}$ signal is applied at gate port and $f_{RF1}$ signal is generated at a drain port of first stage. The second gate mixer use PHEMT for $f_{LO}$ signal and $f_{RF1}$ signal is applied at gate port and $f_{RF2}$ signal is output at a drain port of second stage.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.12
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• pp.103-108
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• 2004

In this paper, we present MIMIC(Millimeter-wave Monolithic Integrated Circuit) up-mixer with low conversion loss and low LO power for the V-band transmitter applications. The up-mixer was successfully integrated by using 0.1 ㎛ GaAs pseudomorphic HEMTs(PHEMTs) and coplanar waveguide (CPW) structures. The circuit is designed to operate at RF frequencies of 60.4 GHz, IF frequencies of 2.4 GHz, and LO frequencies of 58 GHz. The fabricated MIMIC up-mixer size is 2.3 mmxl.6 mm. The measured results show that the low conversion loss of 1.25 dB when input signal is -10.25 dBm at LO power of 5.4 dBm. The LO to RF isolation is 13.2 dB at 58 GHz. The fabricated V-band up-mixer represents lower LO input power and conversion loss characteristics than previous reported millimeter-wave up-mixers.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.765-768
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• 2005

In this paper, high LO-RF isolation 94 GHz MMIC single-balanced mixer was designed and fabricated using a branch line coupler and a ${\lambda}/4$ transmission line. The 94 GHz MMIC single-balanced mixer was designed using the 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT(MHEMT) diode. The fabricated MHEMT was obtained the cut-off frequency($f_T$) of 189 GHz and the maximum oscillation frequency($f_{max}$) of 334 GHz. The designed MMIC single-balanced mixer was fabricated using 0.1 ${\mu}m$ MHEMT MMIC process. From the measurement, the conversion loss of the single-balanced mixer was 23.1 dB at an LO power of 10 dBm. The LO-RF isolations of single-balanced mixer was obtained 45.5 dB at 94.19 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1133-1136
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• 2002

We designed and fabricated a low local oscillation (LO) power V-band CPW mixer module using a CPW-to-waveguide transition technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, and good LO-RF isolation characteristics. The fabricated mixer exhibited a high conversion gain of 2 dB at a low LO power of 0 dBm. For data transmission of the 60 ㎓ wireless LNA systems, we fabricated a CPW-to-waveguide converter module of WR-15 type and mounted the fabricated mixer in the converter module. The fabricated V-band mixer exhibited a higher conversion gain and a lower LO input power than other reported V-band mixers.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.411-412
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• 2008

The high performance 94 GHz MMIC(Monolithic Micro-wave Integrated Circuit) single balanced mixer was designed and fabricated, using MHEMT structure based diodes and a CPW(Coplanar Waveguide) tandem coupler. A novel single-balanced structure of diode mixer is proposed in this work, where a 3-dB tandem coupler with two section of parallel-coupled line. Implemented air-bridge crossover structures achieve wide frequency operation and the fabricated mixer exhibits excellent LO-RF isolation, larger than 30 dB, in the 5 GHz bandwidth of 91-96 GHz. A good conversion loss of 7.4 dB is measured at 94 GHz. The proposed MHEMT-based diode mixer shows superior LO-RF isolation and conversion loss to those of the W-band mixers reported to date.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.5 s.335
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• pp.61-68
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• 2005

In this paper, low conversion loss 94 GHz MIMIC resistive mixer was designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC's, was fabricated. The DC characteristics of MHEMT are 665 mA/mm of drain current density, 691 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 189 GHz and the maximum oscillation frequency(fmax) is 334 GHz. A 94 GHz resistive mixer was fabricated using $0.1{\mu}m$ MHEMT MIMIC process. From the measurement, the conversion loss of the 94 GHz resistive mixer was 8.2 dB at an LO power of 10 dBm. P1 dB(1 dB compression point) of input and output were 9 dBm and 0 dBm, respectively. LO-RF isolations of resistive mixer was obtained 15.6 dB at 94.03 GHz. We obtained in this study a lower conversion loss compared to some other resistive mixers in W-band frequencies.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.6 s.348
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• pp.46-52
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• 2006

We report on a high performance 94 GHz MMIC resistive mixer using 70-nm metamorphic high electron mobility transistor (MHEMT) and micro-machined W-band ring coupler. A novel 3-dimensional structure of resistive mixer was proposed in this work, and the ring coupler with the surface micro-machined dielectric-supported air-gap microstrip line (DAMLs) structure was used for high LO-RF isolation. The fabricated mixer showed an excellent LO-RF isolation of -29.3 dB and a low conversion loss of 8.9 dB at 94 GHz. To our knowledge, compared to previously reported W-band mixers, the proposed MHEMT-based resistive mixer using micro-machined ring coupler has shown superior LO-RF isolation as well as similar conversion loss.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.89-95
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• 2003

In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.5 s.335
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• pp.55-60
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• 2005

A V-band MIMIC quadruple subharmonic mixer is reported in this paper. The cascode harmonic generator is proposed for a high conversion gain. The proposed cascode harmonic generator is shown with a 4-th harmonic output characteristic that represents an average of 2.9 dB and a maximum of 4 dB higher than the conventional multiplier. The measured result of the subharmonic mixer has a conversion gain of 3_4 dB which a good conversion gain at a LO power of 13 dBm. Isolations of LO-to-IF and LO-to-RF were obtained -53.6 dB and -46.2 dB, respectively. The conversion gain of the subharmonic mixer in this study has a higher conversion gain compared with some other reports in millimeter-wave range.

• Journal of IKEEE
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• v.16 no.2
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• pp.127-130
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• 2012

In this paper, we reported on a single balanced monolithic diode mixer using Marchand balun for millimeter-wave applications. The single balanced monolithic mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process. The average conversion loss is 16 dB in the RF frequency range of 81~86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-to-LO isolation characteristics are greater than -30 dB and the total chip size is $1.0mm{\times}1.35mm$.