• Korean Journal of Materials Research
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• v.10 no.9
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• pp.593-600
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• 2000

This paper investigated the conduction path and conduction mechanism in undoped polycrystalline diamond thin films deposited by microwave chemical vapor deposition. The resistances measured by ac impedance spectroscopy with different directions can not be explained by the previously-known surface conduction model. The electrodeposition of Cu and electroetching of Ag experiments showed that the conduction path is the grain boundaries within the diamond films. The electodeposition of Cu with an insulating surface layer further proved that the main conduction path in polycrystalline films in the grain boundaries. The film with high electrical conductivity has low activation energy of 45meV and higher dangling bond density. By considering the results and surface C chemical bonds, the H-C-C-H bonds at surface and in grain boundaries might be the origin of high conductivity in undoped diamond films.

• Journal of Food Hygiene and Safety
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• v.3 no.1
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• pp.19-26
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• 1988

Most of meat spoilage bacteria area Gram negative, which are very sensitive to freezing ; for instance , 90% of E. coli cells are killed or sub-lethally injured by freezing at -3$0^{\circ}C$, and the freeze-injury rate is dependent upon freezing rate. Since the injured bacterial cells are sensitive to selective agents, they fail to multiply in selective media. Injured bacterial cells are, however, capable of spontaneous repair at appropriate environmental and nutritional conditions . Enumeration of injured bacterial cells involves artificial induction of repair at these conditions. Cubic beef samples(3$\times$3$\times$3cm) were frozen at -6$0^{\circ}C$, -4$0^{\circ}C$, or -18$^{\circ}C$. The samples frozen at each temperature were thawed at 4$^{\circ}C$, 2$0^{\circ}C$, or by microwave . After these respective freezing an thawing treatments, the percentage of sub-lethally injured total coliforms out of total surviving ones was measured and compared. The results were as follows: 1. The interaction between freezing and thawing on injury rate was not significant. 2. The injury rates(as means of all three thawing treatments post-freezing) by freezing at -6$0^{\circ}C$, -4$0^{\circ}C$, or -18$^{\circ}C$ were 32.2$^{\circ}C$ and 19.2$^{\circ}C$ respectively . 3. The injury rates(as means of all three freezing treatments)by thawing at 4$^{\circ}C$, 2$0^{\circ}C$, or by microwave were 49.3%, 11.7% and 21.0% respectively. The highest injury rate was caused by freezing at -6$0^{\circ}C$ and subsequent thawing at 4$^{\circ}C$. However since the injury rates by freezing treatment were not significantly different, freezing at -18$^{\circ}C$ and subsequent thawing at 4$^{\circ}C$ can also be recommended , from an economic perspective.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.687-687
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• 2013

In rearpoint contact solar cell and the PERC (passivated emitter rear contact) type cell, surfaces were passivated by SiO2 or Al2O3 to increase solar cell efficiency. Therefore, we have investigated the effect of surface passivation for crystalline silicon solarcell using mass-production atomic layer deposited (ALD) Al2O3. The patttern which consists of cylinders with 100um diameter and 5um height was formed by PR patterning on Si (100) substrate and then Al2O3 of about 10nm and 20nm thickness was deposited by ALD. The pattern in 10 nm Al2O3 film was removed by dipping in aceton solution for about 10 min but the pattern in 20 nm Al2O3 film was not. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD) and Quasi-Steady-State photoconductance (QSSPC). The solar cell process used in this work combines the advantage of using the applicability of a selective deposition associated with a ALD passivation and the use of low-cost screen print for the contacts formation.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.267-267
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• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films have been of interest due to their lower dielectric constant and compatibility with existing process tools. However instability issues related to bond and increasing dielectric constant to water absorption when the SiOF films was exposured to atmospheric ambient. Therefore, the purpose of this research is to study the effect of post oxygen plasma treatment on the resistance of moisture absorption and reliability of SiOF film. Improvement of moisture absorption resistance of SiOF film is due to the forming of thin SiO₂layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the number of Si-F bonds that tend to associate with OH bonds. However, the dielectric constant was increased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and 300℃ of substrate temperature.

• Journal of Bio-Environment Control
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• v.11 no.4
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• pp.151-156
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• 2002

Root zone cooling, such as soil or nutrient solution cooling, is less expensive than air cooling in the whole greenhouse and is effective in promoting root activity, improving water absorption rate, decreasing plant temperature, and reducing high temperature stress. The heat transfer of a soil cooling system in a plastic greenhouse was analyzed to estimate cooling loads. The thermal conductivity of soil, calculated by measured heat fluxes in the soil, showed the positive correlation with the soil water content. It ranged from 0.83 to 0.96 W.m$^{[-10]}$ .$^{\circ}C$$^{[-10]}$ at 19 to 36％ of soil water contents. As the indoor solar radiation increased, the temperature difference between soil surface and indoor air linearly increased. At 300 to 800 W.m$^{-2}$ of indoor solar radiations, the soil surface temperature rose from 3.5 to 7.$0^{\circ}C$ in bare ground and 1.0 to 2.5$^{\circ}C$ under the canopy. Cooling loads in the root zone soil were estimated with solar radiation, soil water content, and temperature difference between air and soil. At 300 to 600 W.m$^{-2}$ of indoor solar radiations and 20 to 40％ of soil water contents,46 to 59 W.m$^{-2}$ of soil cooling loads are required to maintain the temperature difference of 1$0^{\circ}C$ between indoor air and root zone soil.