• Journal of the Korea institute for structural maintenance and inspection
• /
• v.18 no.4
• /
• pp.126-137
• /
• 2014

Characteristics of heating and drying of Canadian-imported Douglas-fir timber using microwave in order to secure convenience and quality of drying timber and to get basic data for secondary conservation treatment are as follows: As the results of analysis of change curves of internal temperature of the timber after irradiating it, round timber and board timber showed stable heat distribution, heat consumption and surface water-content in heating with 30kW for 30 minutes and 120 minutes and with 40kW for 3 minutes and 9 minutes, respectively. Especially, surface water-content distribution according to heating by microwave showed very even leveling and water-content decrease rate was also more 30% compared to its weight showing excellent dry efficiency. And in case of soaking timbers into liquid chemicals for secondary conservation according to the analysis results of heat consumption, it is expected that large amount of preservative will be permeated. Therefore, timber heated by microwave is remarkably available for using industrial materials and developing secondary utilized products with its fast water-content decrease and dryness and higher heat consumption.

• Journal of Environmental Science International
• /
• v.19 no.3
• /
• pp.379-387
• /
• 2010

Sediments of Little Scioto (LS) River in Ohio was contaminated by poor disposal of creosote from Baker Wood Creosoting Facility. Among the primary compounds of creosote, Polycyclic Aromatic Hydrocarbons (PAHs) are the most common ingredient PAHs are known for toxic, carcinogenic and mutagenic compounds. There are many difficulties to remove the PAHs in nature environment because their characteristics are having a less water-solubility, volatile and low mobility properties as increasing the molecular weight. The generation of hydroxyl radicals (${\cdot}OH$) and hydrogen peroxide ($H_2O_2$) forms as well as high temperature (5000 K) and pressure (1000 atm) by a physico-chemical effects of ultrasound during a cavitation collapse can promote the degradation and desorption of PAHs in sediment And it can also produces shock wave and microjets which are able to change the size and surface of particle in solid-liquid system as one of physical effects. Therefore, we explored to understand the role of particle size, the effect of elimination for PAHs concentration by ultrasound and optimize the conditions for ultrasonic treatment. The condition of various size of particles (> $150{\mu}m$, < $150{\mu}m$) and solid-liquid ratio (12.5g/L, 25g/L) for the treatment was considered and ultrasonic power (430 W/L) with liquid - hexane extraction and microwave extraction method were applied after ultrasound treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.5
• /
• pp.402-410
• /
• 2008

Single-walled carbon nanotubes (SWCNTs) were currently produced together with some contaminants such as a metallic catalyst, amorphous carbon, and graphitic nanoparticles, which should be sometimes purified for their applications. This study aimed to develop efficient, scalable purification processes but less harmful to SWCNTs. We designed three-step purification processes: acidic treatment, surface functionalization and soxhlet extraction, and heat treatment. During the soxhlet extraction using tetrahydrofuran, specifically, carbon impurities could be easily expelled through a glass thimble filter without any significant loss of CNTs. Finally, SWCNTs were left as a bulky paper on the filter through membrane filtration. Vertically aligned SWCNTs on one side of bulky paper were well developed in a speparation from the filter paper, which were formed by being sucked through the filter pores during the pressurized filtration. The bucky paper showed a very high peak current density of field emission up to $200\;mA/cm^2$ and uniform field emission images on phosphor, which seems very promising to be applied to vacuum microelectronics such as microwave power amplifiers and x-ray sources.

• Journal of the Korean Society for Heat Treatment
• /
• v.34 no.5
• /
• pp.239-244
• /
• 2021

Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.05a
• /
• pp.55.2-55.2
• /
• 2009

A polymer electrolyte membrane (PEM) fuel cell has been getting large interest as a typical issue in useful applications. The PEMFC is composed of a membrane, catalyst and the bipolar plate. SnOx:F films on SUS316 stainless steel were prepared as a function of substrate with using electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) in order to achieve the corrosion-resistant and low contact resistance bipolar plates for PEM fuel cells. The SnOx:F films coated on SUS316 substrate at surface plasma treatment for excellent stability, before/after heat treatment for good crystalline structure and microwave power for were characterized by X-ray diffraction (XRD), auger electron microscopy (AES) and field emission-scanning electron microscopy (FE-SEM). The SnOx:F film coated on SUS316 substrate with various process parameters were able to observe optimum interfacial contact resistance (ICR) and corrosion resistance. It can be concluded that fluorine-doping content plays an important function in electrical property and characteristic of corrosion-protective film.

• Journal of the Korean institute of surface engineering
• /
• v.46 no.4
• /
• pp.145-152
• /
• 2013

The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.1211-1214
• /
• 2003

The film is prepared by electron cyclotron resonance chemical vapor deposition (ECRCVD) employing CH$_4$ and H$_2$ gases. It is deposited by the control of microwave plasma power, gas flow ratio, deposition pressure, and In-situ thermal treatment temperature. The structure of a-C:H (hydrogenated amorphous carbon) thin film is analysed by FT-IR spectroscopy. The fraction sp$^3$ versus sp$^2$ bonding is very important to clear up the surface and interrace of a-C:H film properties such as nano-scale friction behavior. The sp$^3$ versus sp$^2$ bonding of a-C:H thin film is dependent on the deposition conditions, therefore. nano-scale friction behavior is dependent on the deposition conditions.

• Carbon letters
• /
• v.10 no.2
• /
• pp.123-130
• /
• 2009

Multi-elements doped $TiO_2$ was prepared as a new photocatalyst in order to decrease the band gap of $TiO_2$ by sol-gel process which can provide the large active sites of $TiO_2$. Multi-elements were doped by using a single precursor, tetraethylammonium tetrafluoroborate (TEATFB). By the benefit of large specific surface area of $TiO_2$ prepared by sol-gel process, catalysts showed initial fast removal of dye. The photoactivity showed that the doped catalysts significantly promote the light reactivity than undoped $TiO_2$. The commendable photoactivity of prepared catalysts is predominantly attributable to the doping of anions which may reduce the band gap.

• Korean Journal of Food Science and Technology
• /
• v.37 no.6
• /
• pp.873-881
• /
• 2005

This study was conducted to improve the properties of frozen dough foods (buns and noodles etc.) on the quality deterioration with microwave oven cooking. Microwave is a useful cooking method, but it quickly takes moisture from food surface and makes lowering food quality abruptly. For improvement of these problems, mixing doughs with addition of various additives of 34 types manufactured respectively; starches, modified starches, gums and emulsifiers etc. Each mixing dough produced in sheet type $(30{\times}30{\times}1mm)$ and steamed them, was quickly froze at $-70^{\circ}C$ and packed with polyethylene. Packed samples kept at $-20^{\circ}C$ for 48 hours. After they were steam or microwave treatment packed or non-packed with polyethylene, studied for improvement effects of quality as sensory evaluation and selected 6 type additives; modified starches (TA, ST), gums (AR, GA) and emulsifiers (E, S1) as improvement agent. Because moisture loss from microwave oven cooking leads to quality deterioration of frozen dough foods, additive, such as including starches, modified starch, gums, and emusifiers were added to improve dough properties. Amylogram, scanning electron microscopy, textural analysis, and differential scanning calorimetry revealed addition of additives improved textural properties including surface-hardening of frozen dough foods compared to the control.

• Journal of the Korean Vacuum Society
• /
• v.7 no.3
• /
• pp.167-272
• /
• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films havc been of interest due to their lower dielectric constant and compatibility with existing process tools. However, instability issues related to hond and increasing dielectric constant due to water absorption when the SiOF film was exposured to atmospheric ambient. Therefore, the purpose nf this research is to study the effect of post oxygen plasma treatment on the resistance of nioisture absorption and reliability of SiOF film. Improvement of moisture ahsorption resistance of SiOF film is due to the forming of thin $SiO_2$ layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the numher of Si-F honds that tend to associate with OH honds. However, the dielectric constant was inucased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and $300^{\circ}C$ of substrate temperature.