• Title/Summary/Keyword: Microwave substrate

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Low-temperature Sintering and Dielectric Properties of $CaZrO_3-CaTiO_3$ Ceramics for Middle- Permittivity LTCC Substrate (중유전율 LTCC 기판용 $CaZrO_3-CaTiO_3$계 세라믹스의 저온소결 및 유전특성)

  • Park Jeong-Hyun;Choi Young-Jin;Ko Won-Jun;Park Jae-Hwan;Park Jae-Gwan
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.3 s.32
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    • pp.17-22
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    • 2004
  • The microwave dielectric properties of $CaZrO_3$ ceramics with addition of $CaTiO_3$ were studied. The effect of glass addition on the low-temperature sintering and microwave dielectric properties of $CaZrO_3-CaTiO_3$ ceramics were also evaluated to develop the materials for functional substrates of low-temperature co-fired ceramics. When $10-20 wt\%$ of lithium borosilicate glass was added, the sintering temperature of the $CaZrO_3-CaTiO_3$ ceramics decreased from $1450^{\circ}C$ to below $900^{\circ}C$. As the $T_f$ of glass frits and $CaZrO_3$ are slightly negative and that of $CaTiO_3$ is significantly positive, zero $T_f$ could be realized by mixing an appropriate amount of $CaTiO_3$ with $CaZrO_3$. The $CaZrO_3-CaTiO_3$ ceramics sintered at $875^{\circ}C$ with $15wt\%$ glass frits showed the relative density of $98\%$, permittivity of 23, quality factor of 2500 GHz, and temperature coefficient of resonant frequency of $ -3 ppm/^{\circ}C$.

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Lipoxygenase Activity of Milled Fractions from Brown Rice (현미 도정획분의 Lipoxygenase 활성)

  • Kim, Ki-Joong;Rhee, Chong-Ouk
    • Korean Journal of Food Science and Technology
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    • v.29 no.1
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    • pp.145-149
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    • 1997
  • Lipoxygenase activity from brown rice varieties (Tongjinbyeo, Kumohbyeo and Kanchukbyeo) was investigated using spectrophotometric method. In all three varieties, there was an increase in the enzyme activity with the reaction time. Enzyme activity was tested at different concentration of the substrate. The $V_{max}\;and\;K_m$ values of Tongjin, Kumoh and Kanchukbyeo were 57.89, 19.85 and 31.38 units/mg protein and 0.054, 0.045 and 0.035 mM. The study of lipoxygenase activity at different pH levels showed that all the varieties had maximal activities around $pH\;7.0{\sim}7.6$. The enzyme activity and specific activity on milled fractions of different brown rice varieties, fraction II was superior to the other fractions and fraction IV was inferior to the other fractions. As the result of microwave heating for 0, 30, 60 and 90 sec, the enzyme activity and specific activity of all the varieties were decreased by the elapse of heating time.

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Design of Dual Band Antenna for UWB / WAS for Wireless Local Area Communication (무선 근거리 통신을 위한 UWB/WAS용 이중대역 안테나 설계)

  • Kim, Gyeong-rok;Oh, Mal-geun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2018.10a
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    • pp.522-525
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    • 2018
  • In this paper, we design a UWB / WAS microstrip antenna for wireless local high - speed communication. The substrate of the proposed antenna is FR-4 (er = 4.3) and its size is $30[mm]{\times}30[mm]$. It is designed to have characteristics that can be used in the frequency bands of 3.5 [GHz] and 5.2 [GHz], which are UWB / WAS frequency bands. The simulation was performed using CST Microwave Studio 2014. Simulation results show that the gain is 1.592 [dBi] at 3.5 [GHz] and 2.210 [dBi] at 5.2 [GHz]. The S-parameter also showed a result of less than -10 [dB] (WSWR 2: 1) in the desired frequency band. Microstrip antennas have been miniaturized, high performance, and light weight, and excellent and low cost systems are continuously being developed. In addition, many people use wireless local area network systems used in homes, companies, and public facilities. Since the UWB / WAS technology is proposed according to the development of the system and the demand increase, the antenna that satisfies the above conditions will be designed and the technology applicable to the system will be used more conveniently.

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Oxide perovskite crystals type ABCO4:application and growth

  • Pajaczkowska, A.
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.258-292
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    • 1996
  • In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

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Characteristics of the Diamond Thin Film as the SOD Structure

  • Lee, You-Seong;Lee, Kwang-Man;Ko, Jeong-Dae;Baik, Young-Joon;Chi, Chi-Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.58-58
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    • 1999
  • The diamond films which can be applied to SOD (silicon-on-diamond) structure were deposited on Si(100) substrate using CO/H2 CH4/H2 source gases by microwave plasma chemical vapor deposition(MPCVD), and SOD structure have been fabricated by poly-silicon film deposited on the diamond/Si(100) structure y low pressure chemical vapor deposition(LPCVD). The phase of the diamond film, surface morpholog, and diamond/Si(100) interface were confirmed by X-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM), and Raman spectroscopy. The dielectric constant, leakage current and resistivity as a function of temperature in films are investigated by C-V and I-V characteristics and four-point probe method. The high quality diamond films without amorphous carbon and non-diamond elements were formed on a Si(100), which could be obtained by CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5%, respectively. The (111) plane of diamond films was preferentially grown on the Si(100) substrate. The grain size of the films deposited by CO/H2 are gradually increased from 26nm to 36 nm as deposition times increased. The well developed cubo-octahedron 100 structure nd triangle shape 111 are mixed together and make smooth and even film surface. The surface roughness of the diamond films deposited by under the condition of CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5% were 1.86nm and 3.7 nm, respectively, and the diamond/Si(100) interface was uniform resistivity of the films deposited by CO/H2 concentration ratio of 15.3% are obtained 5.3, 1$\times$10-9 A/cm, 1 MV/cm2, and 7.2$\times$106 $\Omega$cm, respectively. In the case of the films deposited by CH4/H2 resistivity are 5.8, 1$\times$10-9 A/cm, 1 MV/cm, and 8.5$\times$106 $\Omega$cm, respectively. In this study, it is known that the diamond films deposited by using CO/H2 gas mixture as a carbon source are better thane these of CH4/H2 one.

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Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Using a Corrugated Bridge with HRS MEMS Package

  • Song Yo-Tak;Lee Hai-Young;Esashi Masayoshi
    • Journal of electromagnetic engineering and science
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    • v.6 no.2
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    • pp.135-145
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    • 2006
  • This paper presents the theory, design, fabrication and characterization of the novel low actuation voltage capacitive shunt RF-MEMS switch using a corrugated membrane with HRS MEMS packaging. Analytical analyses and experimental results have been carried out to derive algebraic expressions for the mechanical actuation mechanics of corrugated membrane for a low residual stress. It is shown that the residual stress of both types of corrugated and flat membranes can be modeled with the help of a mechanics theory. The residual stress in corrugated membranes is calculated using a geometrical model and is confirmed by finite element method(FEM) analysis and experimental results. The corrugated electrostatic actuated bridge is suspended over a concave structure of CPW, with sputtered nickel(Ni) as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon(HRS) substrate. The corrugated switch on concave structure requires lower actuation voltage than the flat switch on planar structure in various thickness bridges. The residual stress is very low by corrugating both ends of the bridge on concave structure. The residual stress of the bridge material and structure is critical to lower the actuation voltage. The Self-alignment HRS MEMS package of the RF-MEMS switch with a $15{\Omega}{\cdot}cm$ lightly-doped Si chip carrier also shows no parasitic leakage resonances and is verified as an effective packaging solution for the low cost and high performance coplanar MMICs.

Effect of Cultivars, Cooking and Processing on the Trypsin Inhibitor Activity of Soybean

  • Felipe, Penelope;Yang, Yoon-Hyung;Lee, Jung-Hee;Sok, Dai-Eun;Kim, Hyoung-Chin;Yoon, Won-Kee;Kim, Hwan-Mook;Kim, Mee-Ree
    • Preventive Nutrition and Food Science
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    • v.10 no.1
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    • pp.6-10
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    • 2005
  • The trypsin inhibitor activity (TIA) of various soybean cultivars was evaluated by measuring the inhibition of trypsin activity using N-benzoyl-DL-arginine-p-nitro-anilide (BAPNA) as the substrate. The TIA values of eleven white shelled soybean cultivars including a glyphosate-tolerant soybean (16.58 to 17.90㎎/g) were not significantly different among cultivars. Black shelled soybeans had higher TIA values, ranging from 40.09 to 52.11㎎/g, compared to white shelled soybeans (p<0.05). When the TIA of commercially processed soybean foods were determined, no TIA was detected in soysauce, tofu and soybean paste. During conventional moist heating, the IT/sub 50/ (Time required to reach 50% inhibition of TIA) values were decreased as heating temperature and cooking pressure increased. The IT/sub 50/ values of moist heating were estimated to be 91.68, 37.71 and 19.50 min at 60, 80 and 100℃, respectively. The IT/sub 50/ value of microwave cooking was 4.75 min at medium heat, while that of the pressure cooking at 120℃ was only 2.62min. Moreover, there was a negative relationship between temperature and IT/sub 50/ values (R=0.92, p<0.01). The TIA of soybean sprouts was completely inactivated after heating at 100℃ for 5 min, although fresh soybean sprouts showed one fifth of the TIA value of white shelled soybeans. Based on our results, pressure cooking is the most effective cooking method to reduce TIA in soybeans.

Protein Quality Evaluation of Cooked Hagfish (Eptatretus burgeri) Meats

  • Hwang, Eun-Young;Lee, Jin-Hwa;Ryu, Hong-Soo;Park, Nam-Gyu;Chun, Soon-Sil
    • Preventive Nutrition and Food Science
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    • v.7 no.3
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    • pp.287-292
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    • 2002
  • The effect of cooking methods on in vivo and in vivo indices of the protein quality of hagfish meat were investigated. In vivo protein digestibilities of cooked meats (81.3~83.5 %) were not significant different (p<0.05) from those of van meat (82.9%), with the exception of steamed (11$0^{\circ}C$, 15 min) meat (86.3 %). Convection oven cooking (22$0^{\circ}C$, IS min) resulted in a higher trypsin indigestible substrate (TIS, 49.2 mg/g solid) compared with that of raw meat (38.9 mg/g solid). free amino acid content of raw meat was decreased after boiling (10$0^{\circ}C$, 10min). Both convection oven and microwave cooking (2,450 MHz, 3 min) decreased available lysine from 4.9g/16g N to 3.8~4.1g/16g N. In vivo apparent protein digestibilites (AD) of hagfish meat were similar fur raw (92.4%) and cooked meats, but were somewhat lower than ANRC (Animal Nutrition Research Council) casein (945%). The PERs (3.7~4.1) and NPRs (3.7~4.9) of cooked meats were significantly higher (p<0.05) than those of raw meat (PER 3.3, NPR 3.6 and ANRC casein (PER 2.5, NPR 2.6), despite their lower in vivo protein digestibilities. These results demonstrate that cooking at optimal conditions resulted in remarkably positive effects on in vivo and in vivo protein qualities of hagfish meats. Therefore, steamed hagfish meat is an excellent source of high quality protein from seafood products.

The Properties on Ceramic/glass Composites of SiO2-B2O3-R(CaO, BaO, ZnO, Bi2O3 Borosilicate Glass System for Low Temperature Ceramics (저온 소결 세라믹스용 SiO2-B2O3-R(CaO, BaO, ZnO, Bi2O3 붕규산염계 세라믹/유리 복합체의 특성)

  • Kim, Kwan-Soo;Yoon, Sang-Ok;Shim, Sang-Heung;Park, Jong-Guk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.1
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    • pp.19-24
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    • 2007
  • The effects of $B_2O_3-SiO_2-R(R;CaO,\;BaO,\;ZnO,\;Bi_2O_3)$ borosilicate glass system on the sintering behavior and microwave dielectric properties of ceramic/glass composites were investigated as functions of modifier, glass addition ($30{\sim}50\;vol%$) and sintering temperature ($500{\sim}900^{\circ}C$ for 2 hrs). The addition of 50 and 45 vol% glass ensured successful sintering below $900^{\circ}C$. Sintering characteristics of the composites were well described in terms of modifier. Borosilicate glass enhanced the reaction with $Al_{2}O_{3}$ to form pores, second phases and liquid phases, which was responsible to component of modifier. Dielectric constant (${\varepsilon}_{r},\;Q{\times}f_{o}$) and temperature coefficient of resonant frequency (${\tau}_{f}$) of the composite with 50 and 45 vol% glass contents($B_{2}O_{3}:SiO_{2}:R=25:10:65$) demonstrated A-CaBS(7.8, 2,560 GHz, -81ppm/$^{\circ}C$), A-BaBs(5.8, 3.130 GHz, -64 ppm/$^{\circ}C$), A-ZnBS(5.7, 17,800 GHz, -21 ppm/$^{\circ}C$), A-BiBs(45 vol% glass in total)(8.3, 2,700 GHz, -45 ppm/$^{\circ}C$) which is applicable to substrate requiring an low dielectric properties.

A CPW-Fed Self-Affine Cross Shape Fractal Antenna (자기 아파인 프랙탈 구조를 이용한 CPW 급전 크로스 안테나)

  • Kim Tae-Hwan;Lee Jae-Wook;Cho Choon-Sik;Lee Yun-Hyun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.9 s.100
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    • pp.949-956
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    • 2005
  • In this paper, a new CPW-fed cross shape fractal antenna having a self-affinity is presented. This novel configuration, which has anisotropic scaling symmetry, makes smaller profile characteristic compared to the fractal antenna using a self-similarity. Increase of the iteration coefficient, which leads to decrease of the fundamental resonant frequency, shows a good impedance matching condition and multi-band characteristics due to new surface current paths. The radiation patterns are similar to those of monopole antennas. In the K3 stage of iteration, the proposed antenna shows a measured maximum gain 2.27 dBi at 940 MHz. A commercially available software based on the FDTD algorithm has been used to obtain the predicted results. In addition, an RT/Duroid 5880 substrate has been employed for the experimental results.