• Journal of Magnetics
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• v.3 no.2
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• pp.64-67
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• 1998

Microwave absorbing properties of ferrite-epoxy composite (absorbing layer) attached on the carbon fiber polymer composite (reflective substrate) are analyzed on the basis of wave propagation theory. A modified equation for wave-impedance-matching at the front surface of absorbing layer including the effect of electrical properties of the quasi-conducting substrate is proposed. Based on this analysis, the frequency and layer dimension that produce zero-reflection can be estimated from the intrinsic material properties of the obsorbing layer and the substrate. It is demonstrated that the microwave reflectivity of carbon fiber composite has a strong influence on the microwave absorbance of front magnetic layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.1
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• pp.20-24
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• 2006

Iridium-catalyzed carbon nanofilaments were formed on MgO substrate as a function of the gap between the substrate and the plasma using microwave plasma-enhanced chemical vapor deposition method. Under the remote plasma condition, carbon nanofibers were formed on the substrate. Under the adjacent plasma condition, on the other hand, carbon nanotubes-like materials instead of carbon nanofibers could be formed. When the substrate immersed into the plasma, any carbon nanofilaments formation couldn't be observed. During the reaction, the substrate temperatures were measured as a function of the gap. Based on these results, the cause for the different carbon nanofilaments formation according to the gap was discussed.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.540-544
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• 1996

To apply the CVD diamond film to coated tools, it is necessary to make adhesion strength between diamond film and substrate stronger. So adhesion strength of diamond coated WC-Co tools using Microwave Plasma CVD and cutting test of Al-18mass%Si alloy using diamond cutting tools were studied. Diamond coating was carried out using Microwave Plasma CVD apparatus. Reaction gas was used mixture of methane and hydrogen. Substrate temperature were varied from 673K to 1173K by control of microwave output power and reaction pressure. By observation of SEM, grain size became larger and larger as substrate temperature became higher and higher. Also all deposits were covered with clear diamond crystals. XRD results, the deposits were identified to cubic diamond. An analysis using Raman spectroscopy, the deposit synthesized at lower substrate temperature (673K) showed higher quality than deposit synthesized at higher substrate temperature (1173K). As a result of scratch adhesion strength test, from 873K to 1173K adhesion strength decreased by rising of substrate temperature. The deposit synthesized at 873K showed best adhesion strength. In the cutting test of Al-18mass%Si alloy using diamond coated tools and the surface machinability of Al-Si works turned with diamond coating tools which synthesized at 873K presented uniform roughness. Cutting performance of Al-18mass%Si alloys using diamond coated WC-Co tools related to the adhesion strength.

• Journal of electromagnetic engineering and science
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• v.18 no.2
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• pp.101-107
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• 2018

The impedance bandwidth and radiation characteristics of an aperture-coupled microstrip line-fed patch antenna (ACMPA) with a high permittivity (${\varepsilon}_r=10$) feed substrate suitable for integration with a monolithic microwave integrated circuit (MMIC) are investigated for various feed substrate thicknesses through an experiment and computer simulation. The impedance bandwidth of an ACMPA with a high permittivity feed substrate increases as the feed substrate thickness decreases. Furthermore, the front-to-back ratio of an ACMPA with a high permittivity feed substrate increases and the cross-polarization level decreases as the feed substrate thickness decreases. As the impedance bandwidth of an ACMPA with a high permittivity feed substrate increases and its radiation characteristics improve as the feed substrate thickness decreases, the ACMPA configuration becomes suitable for integration with an MMIC.

• International Journal of Computer Science & Network Security
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• v.21 no.9
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• pp.358-361
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• 2021

In this paper, we have simulated a rectangular microstrip patch antenna for aerospace applications based on graphen as a conductor and a multilayer substrate .as a result of the use of the graphen patch we obtained a reconfigurable antenna on the frequency range (0.6-0.7 terahertz) with a gain up to 12 db. The simulation of this antenna has been performed by using CST Microwave Studio, which is a commercially available finite integral based electromagnetic simulator.

• Journal of Electrical Engineering and information Science
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• v.2 no.3
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• pp.95-98
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• 1997

A nonlinear optical-microwave interaction is carried out in an uniplanar CPW-to-Slotline ring resonator on the semi-insulating GaAs substrate, in which a Schottky photodetector is monolithically integrated as a coupling gap. When the capacitive reactance of the detetor is modulated, the parametric amplification effect of the mixer occurs. In this device structure, the parametric amplification gain of 20 dB without the applied bias in RF signal is obtained. This microwave optoelectronic mixer can be used in the fiber-optic communication link.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.22-22
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• 2009

The silver thick film has been used in many industries such as display, chip, solar cell, automobile, and decoration with conventional heating. The silver thick film is fired with optimal time and temperature. However, decreasing the fabrication time is required due to high production power. Furthermore, there is a problem that silver in electrode is diffused throughout any substrates. For inhibiting the Ag diffusion and long fabrication time we considered a microwave heating. We investigated firing of silver thick film with conventional and microwave heating. The temperature of substrate was measured by thermal paper and the temperature of substrate was under $100\;^{\circ}C$ The shrinkage of electrode was measured with optical microscopy and optical profilometry. The shrinkage of electrode heat treated with microwave for 5min was similar to the that fired by the conventional heating for several hours. After firing by two types of heating, the diffusion of silver was determined using a optical microscope. The microstructure of sintered silver thick film was observed by SEM. Based on our results, the microwave heating should be a candidate heating source for the fabrication electronic devices in terms of saving the tact time and preventing the contamination of substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.905-908
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• 2000

The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.198-202
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• 2006

We could achieve the bridge-type formation of the iridium-catalyzed carbon nanofibers across the gap on the MgO substrate using microwave plasma enhanced chemical vapor deposition method. On the plane surface area of the MgO substrate, the iridium-catalyzed carbon nanofibers were grown as a lateral direction to the substrate. The bridge-type formation and/or the lateral growth of the iridium-catalyzed carbon nanofibers were interconnected with each other. Finally, they could form an entangled network having the bridge-type formation of the carbon nanofibers across the gap on the substrate and the laterally-grown carbon nanofibers on the plane surface area of the substrate. The entangled network showed the semiconductor electrical characteristics.

• Journal of Surface Science and Engineering
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• v.39 no.3
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• pp.87-92
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• 2006

The characteristic of interface layer and the effect of bias voltage on the microstructure of c-BN films were studied in the microwave plasma hot filament C.V.D process. c-BN films were deposited on a high speed steel(SKH-51) substrate by hot filament CVD technique assisted with a microwave plasma to develop a high performance of resistance coating tool. c-BN films were obtained at a gas pressure of 20 Torr, vias voltage of 300 V and substrate temperature of $800^{\circ}C$ in $B_2H_6-NH_3-H_2$ gas system. It was found that a thin layer of hexagonal boron nitride(h-BN) phase exists at the interface between c-BN layer and substrate.