• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.308-313
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• 2001

We report the effects of the V$_2$O$_{5}$ additive on the sintering behavior and microwave dielectric properties of ZnNb$_2$O$_{6}$ ceramics. Densification temperatures of V$_2$O$_{5}$-doped ZnNb$_2$O$_{6}$ samples are lowered to the range of 875-9$25^{\circ}C$ because of the liquid phase sintering. Doped samples are composed of a Zn(Nb,V)$_2$O$_{6}$ solid solution and second phases. Up to 5 wt% V$_2$O$_{5}$ is the only second phase, however, V$_2$O$_{5}$ also exists as the second phase for 10 wt% V$_2$O$_{5}$ addition. In comparison with reported values of undoped ZnNb$_2$O$_{6}$ ceramics, microwave properties of V$_2$O$_{5}$-doped ZnNb$_2$O$_{6}$ samples are seriously degraded, which is confirmed to originate from the second phases. The optimum microwave properties (Q$\times$f=13,800, $\varepsilon$$_{r}$=23, $\tau$$_{f}$=-66ppm/$^{\circ}C$) are obtained from ZnNb$_2$O$_{6}$ with the addition of 5 wt% V$_2$O$_{5}$ sintered at 90$0^{\circ}C$.90$0^{\circ}C$.EX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.314-314
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• 2008

The low temperature sintering and the dielectric properties of $Al_2O_3/SiO_2$-zinc borosilicate glass composites were investigated in the view of the application for LTCC. When the sintering was conducted at $900^{\circ}C$ $ZnAl_2O_4$ and $ZnB_2O_4$ compounds formed at the $Al_2O_3$-rich and the $SiO_2$-rich compositions, respectively. The reaction between ZBS glass and $Al_2O_3/SiO_2$ caused the formation of these compounds. The $Al_2O_3/SiO_2$ ratio affected the dielectric properties. The excellent dielectric properties, i.e., Q$\times$f value= 40,000 GHz and ${\varepsilon}_r$=4.5, were obtained in the $Al_2O_3/SiO_2$-ZBS glass system and fabricated the LTCC substrate materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.397-403
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• 2003

Microwave dielectric properties of (1-x)ZnW $O_4$-xTi $O_2$ ceramic systems were investigated with calcination temperatures and Ti $O_2$ contents. The ZnW $O_4$ ceramic could be suitably sintered at 1075$^{\circ}C$ and showed the dielectric constant of 13.6, quality factor(Q$\times$ $f_{O}$value) of 22,000 and temperature coefficient of resonant frequency($\tau$$_{f}$) of -65$\pm$2ppm/$^{\circ}C$. Increasing the amount of Ti $O_2$ in the range of 0.25 to 0.45 mol, the dielectric constant and $\tau$$_{f}$ increased due to the role of Ti $O_2$ but the quality factor decreased due to the increase of phase boundaries. The 0.7ZnW $O_4$-0.3Ti $O_2$ ceramic showed the dielectric constant of 19.8, qualify factor(Q$\times$ $f_{0}$) of 20,000 and $\tau$$_{f}$ of -3$\pm$1ppm/$^{\circ}C$.>.EX>.>.>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.955-961
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• 2011

We investigated the physical properties of stoichiometric and non-stoichiometric oxide doped complex perovskite, $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics and their impacts on the microwave dielectric performances using various characterization techniques such as X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and network analyzer. According to the measurement of lattice constant changes, anomalous lattice volume contraction of $ZrO_2$ doped $Ba(Zn_{1/3}Ta_{2/3})O_3$ sample only showed the dielectric quality factor enhancements, which was due to the lattice volume contraction as well as the 1:2 B-site cation ordering. In addition, NiO doping was useful to the stabilization of temperature coefficient of resonance frequency.

• Korean Journal of Crystallography
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• v.12 no.2
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• pp.76-80
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• 2001

We have studied the effect of sintering conditions on the long-range order parameter of the 1 : 2 cation ordering in Ba(Mg/sub 1/3/Nb/sub 2/3/)O₃microwave dielectrics prepared through a columbite precursor method. It is found that the order parameter depends strongly on the sintering conditions. As the heat-treatment time increases at 1350℃, the long-range order parameter decreases. When sintered at 1500℃ for 4 hours, BMN shows a high long-range order parameter of 0.94.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.232-240
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• 1999

In this study, the $(1-\chi)Ba(Mg_{\fraction one-third}Ta_{\fraction two-thirds}O_3-\chiBa(Co_{\fraction one-third}\Nb_{\fraction two-thirds})O_3$ ceramics($\chi$=0.3,0.4,0.5,0.6) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1500~1575^{\circ}C$ for5 hours in air. The BMT-BCN ceramics have a complex perovskite structure, and have peaks of (101), (102), (201), (202) and (212). Increasing the sintering temperature, dielectric constant was increased. Temperature coefficients of resonant frequency of the specimens were decreasing with increasing BCN content. In the case of the 0.7BMT-0.3BCN ceramics sintered at $1575^{\circ}C$ for 5 hours, dielectric constant, quality factor and temperature coefficient of resonant frequency for microwave dielectrics application were a good value of 28, 235500 at ㎓ and -$1.2 ppm/^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.356-360
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• 2017

We investigated the phase evolution, microstructure, and microwave dielectric properties of Na- and Zr-doped $Ba(Mg_{0.5}W_{0.5})O_3$ [i.e., ($Ba_{1-2x}Na_{2x})(Mg_{0.5-x}Zr_xW_{0.5})O_3$] ceramics. $BaWO_4$ as a secondary phase was observed in all compositions, and it increased as the dopant concentration increased. All specimens revealed a dense microstructure. For the composition of x=0.01, polyhedral grains were observed. As the dopant concentration increased, the densification and the grain growth were promoted by a liquid phase. The quality factor($Q{\times}f_0$) decreased remarkably, whereas the dielectric constant (${\varepsilon}_r$) tended to decrease as the dopant concentration increased. The dielectric constant, quality factor, and temperature coefficient of the resonant frequency of the composition of x=0.01 sintered at $1,700^{\circ}C$ for 1 h were 18.6, 216,275 GHz, and $-22.0ppm/^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.56 no.6
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• pp.526-533
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• 2019

Indialite/cordierite glass-ceramics demonstrate excellent microwave dielectric properties such as a low dielectric constant of 4.7 and an extremely high quality factor Qf of more than 200 × 10³ GHz when crystallized at 1300℃/20 h, which are essential criteria for application to 5G/6G mobile communication systems. The glass-ceramics applied to dielectric resonators, low-temperature co-fired ceramic (LTCC) substrates, and direct casting glass substrates are reviewed in this paper. The glass-ceramics are fabricated by the crystallization of glass with cordierite composition melted at 1550℃. The dielectric resonators are composed of crystallized glass pellets made from glass rods cast in a graphite mold. The LTCC substrates are made from indialite glass-ceramic powder crystallized at a low temperature of 1000℃/1 h, and the direct casting glass-ceramic substrates are composed of crystallized glass plates cast on a graphite plate. All these materials exhibit excellent microwave dielectric properties.

• Korean Journal of Materials Research
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• v.19 no.10
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• pp.550-554
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• 2009

Unreported dielectrics based on the binary system of MgO-SiO$_2$ were investigated as potential candidates for microwave dielectric applications, particularly those demanding a high fired density and high quality factors. Extensive dielectric compositions having different molar ratios of MgO to SiO$_2$, such as 2:1, 3:1, 4:1, and 5:1, were prepared by conventional solid state reactions between MgO and SiO$_2$. 1 mol% of V$_2$O$_5$ was added to aid sintering for improved densification. The dielectric compositions were found to consist of two distinguishable phases of Mg$_2$SiO$_4$ and MgO beyond the 2:1 compositional ratio, which determined the final physical and dielectric properties of the corresponding composite samples. The increase of the ratio of MgO to SiO$_2$ tended to improve fired density and quality factor (Q) without increasing grain size. As a promising composition, the 5MgO.SiO$_2$ sample sintered at 1400 $^{\circ}C$ exhibited a low dielectric constant of 7.9 and a high Q $\times$ f (frequency) value of $\sim$99,600 at 13.7 GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.139-142
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• 2003

Microwave dielectric properties of $Ca(Li_{1/4}Nb_{3/4})O_3-CaTiO_3$ ceramic systems were investigated with calcination temperatures and amounts of $CaTiO_3$ in the range of 0.2 to 0.4mol. $Ca(Li_{1/4}Nb_{3/4})O_3$ ceramics having orthorhombic crystal structure could be synthesized at $750^{\circ}C$ and sintered well at $1250^{\circ}C$. They showed the dielectric constant of 26, quality factor($Q{\times}f_o$) of 13,000 and temperature coefficient of resonant frequency(${\tau}_f$) of $-49{\pm}2ppm/^{\circ}C$ With adding the $CaTiO_3$ amount the dielectric constant and ${\tau}_f$ increased due to the solute of $CaTiO_3$ but the quality factor decreased. The 0.7$Ca(Li_{1/4}Nb_{3/4})O_3-0.3CaTiO_3$ ceramic showed the dielectric constant of 44, quality factor($Q{\times}f_o$) of 12,000 and ${\tau}_f$ of $-9{\pm}1ppm/^{\circ}C$.