• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.53-55
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• 2013

In general, various numerical techniques such as MoM, TLM, FEM, and BEM can be introduced to analyze some microwave device and electromagnetic propagation problems. Numerical simulator based on Java thread-level parallelism for improving computation performance is implemented and estimated.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.6
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• pp.306-309
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• 2004

This paper presents a new active antenna consisting of a microstrip patch for the passive radiator, a mixer for frequency conversion, a voltage controlled oscillator (VCO) and a phase detector for phase control. The microwave signal frequency has been converted into intermediate frequency (IF) on the antenna elements by the mixer. The active antenna consists of two ports, the IF port has a transmitted IF signal via power combined to the baseband and the dc control port is under the control of the phase-detector. The input voltage of the VCO is controlled by the phase detector. The scan range of the array is determined by the phase detector and the VCO and is obtained between 30$^{\circ}$ and - 30$^{\circ}$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.234-237
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• 1996

The amorphous chalogenide semiconductors are new material in semiconductor physics. Their properties, especially electronic and optical properties are main motives for device application. Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$material has the stable ac conductivity at high frequency and the dc memory switching property. At higher frequency than 10MHz, ac conductivity of As$_{10}$Ge$_{15}$ Te$_{75}$ thin film is much higher than below frequency and independent of temperature and frequency. If the dc voltages are applied between edges of thin film, one can see the dc memory switching phenomenon, in other words the dc conductivity increases quite a few of magnitude after the threshold voltage is applied. Using the stable ac conductivity at high frequency and the increase of conductivity after dc memory switching, As$_{10}$Ge$_{15}$ Te$_{75}$thin film is considered as new material for microwave switch devices.vices.es.vices.

• Smart Structures and Systems
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• v.5 no.4
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• pp.469-482
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• 2009

The emerging sensor-based structural health monitoring (SHM) technology has a potential for cost-effective maintenance of aging civil infrastructure systems. The author proposes to integrate continuous and global monitoring using on-structure sensors with targeted local non-destructive evaluation (NDE). Significant technical challenges arise, however, from the lack of cost-effective sensors for monitoring spatially large structures, as well as reliable methods for interpreting sensor data into structural health conditions. This paper reviews recent efforts and advances made in addressing these challenges, with example sensor hardware and health monitoring software developed in the author's research center. The hardware includes a novel fiber optic accelerometer, a vision-based displacement sensor, a distributed strain sensor, and a microwave imaging NDE device. The health monitoring software includes a number of system identification methods such as the neural networks, extended Kalman filter, and nonlinear damping identificaiton based on structural dynamic response measurement. These methods have been experimentally validated through seismic shaking table tests of a realistic bridge model and tested in a number of instrumented bridges and buildings.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.63.1-63.1
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• 2012

In recent years, the functional inks for printed electronics that can be combined with a variety of printing techniques have attracted increasingly significant interest for use in low cost, large area, high performance integrated electronics and microelectronics. In particular, the development of solution-processable conductor, semiconductor and insulator materials is of great importance as such materials have decisive impacts on the electrical performance of various electronic devices, and, therefore, need to meet various requirements including solution processability, high electrical performance, and environmental stability. Semiconductor inks such as IGO, CIGS are synthesized by chemical solution method and microwave reaction method for TFT and solar cell application. Fine circuit pattern with high conductivity, which is valuable for flexible electrode for PCB and TSP devices, can be printed with highly concentrated and stabilized conductor inks such as silver and copper. Solution processed insulator such as polyimide derivatives can be use to all printed TFT device. Our research results of functional inks for printed electronics provide a recent trends and issues on this area.

• ETRI Journal
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• v.24 no.3
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• pp.190-196
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• 2002

This paper presents millimeter wave monolithic microwave integrated circuit (MMIC) low noise amplifiers using a $0.15{\mu}m$ commercial pHEMT process. After carefully investigating design considerations for millimeter-wave applications, with emphasis on the active device model and electomagnetic (EM) simulation, we designed two single-ended low noise amplifiers, one for Q-band and one for V-band. The Q-band two stage amplifier showed an average noise figure of 2.2 dB with an 18.3 dB average gain at 44 GHz. The V-band two stage amplifier showed an average noise figure of 2.9 dB with a 14.7 dB average gain at 65 GHz. Our design technique and model demonstrates good agreement between measured and predicted results. Compared with the published data, this work also presents state-of-the-art performance in terms of the gain and noise figure.

• Journal of the Korean Solar Energy Society
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• v.23 no.2
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• pp.35-41
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• 2003

In order to investigate the offshore wind resources around Korean peninsula, the "QuikSCAT Level 3" data by ADEOS II satellite was analyzed from Jan 1 2000 to Jan 18 2003. The "SeaWinds" on the satellite is a specialize4 device for microwave scatterometery that measures near-surface wind speed and direction under all weather and cloud conditions. Wind speed are extrapolated from 10m to 60m with the exponent of 1/10 in the power law model. It has been found that the High wind energy potentials are prevailing in the South sea and Southeastern end of Korean peninsula.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.63-65
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• 2011

Current general-purpose electromagnetic field simulator has been widespread and is being used to antenna design, EMC design, measurement, and microwave device design, etc. This paper is to solve various electromagnetic problems of X-band region for the purpose multi-core-based PC utilizing network resources more efficiently, and then the electromagnetic field simulator based on TCP / IP-based network topology, configuration, and its framework design is proposed.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1955-1957
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• 2003

This paper presents a novel defected ground structure (DGS) and its application to a microwave oscillator. The presented oscillator is designed so as to use the suggested defected ground structure as a feedback loop inducing a negative resistance as well as a frequency-selective circuit. Applying the feedback loop between the drain and the gate of a FET device produces precise phase conversion in the feedback loop. The equivalent circuit parameters of the DGS are extracted by using a three-dimensional EM calculations and simple circuit analysis method. The implemented 1.07 GHz oscillator exhibits 0 dBm output power with over 15% dc-to-RF power efficiency and -106 dBc/Hz phase noise at 100 kHz offset from carrier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.362-363
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• 2006

In this study, the filter was designed for tuning center frequency and fabricated using ($Sr,Ba)TiO_3$ ferroelectrics and $YBa_2CuO_7$ high temperature superconductor thin film. The best result in figure of merit was 35 when the $Ba_{0.5}Sr_{0.5}TiO_3$ thin film deposition temperature was $600^{\circ}C$, the post anneal condition was $600^{\circ}C$, 10min in 1atm, $O_2$. When using $20{\mu}m$ IDC pattern gap. The higher tunability was obtained than using $30{\mu}m$ pattern gap.