• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}Sr_{0.4}TiO_{3}(BST)$ films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}Sr_{x}TiO_{3}$ (x = 0.1 - 0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}Sr_{0.3}TiO_{3}$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.

• Journal of electromagnetic engineering and science
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• 제10권4호
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• pp.282-289
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• 2010

A simplified, practical vector network analyzer (VNA) that uses mature radio-over-fiber technology has been designed and demonstrated. The measurement concept allows the full S-parameters of a microwave device (or antenna) to be obtained while minimizing the detrimental effects of electrical cables, which are replaced with a photonic link. A variety of high-frequency light modulation schemes with frequency sweeping capabilities are presented to realize a one-path (single, forward), frequency-multiplied optical link for VNA applications. Using the photonic one-path link, full two-port S-parameters have been extracted based on five-term error modeling, which has half the error terms compared with the standard duplex configuration. The S-parameters of a microwave filter and antenna measured using frequency-multiplied optical links are found to be in good agreement with those obtained using a conventional VNA.

• 전기학회논문지
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• 제62권6호
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• pp.762-766
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• 2013

Interest in Wireless Power Transmission (WPT) technology has been increasing worldwide recently. This trend is proved by commercialized products such as electric toothbrush, wireless razor, and wireless charger for mobile phone battery. Studies for enhancing the applicability of the technology have been continuously conducted. Currently the WPT technology is based on the technologies using microwave, inductively coupling, and magnetic resonance. In the meantime, development of the microwave-based WPT faces difficulty due to health hazards involved in the technology, and application of the WPT technology using inductively coupling is restricted by area due to the problem of transmission length. In comparison, the WPT technology using magnetic resonance draws attention in terms of efficiency and transmission length. In this study, the sending coil based on the WPT technology using magnetic resonance system was replaced with an HTS coil to enhance transmission efficiency. Since the HTS coil has a zero resistance, power transmission loss can be minimized. At the same time, size of the current density could be increased to 100 times or more than typical coils. In addition, through impedance matching of LC device, maximal resonance properties were induced and consequently, frequency selection quality characteristics or Q was enhanced. As a result, the WPT type using the HTS coil showed a longer transmission length and better transmission efficiency compared with the WPT type using typical coils.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}$S $r_{x}$Ti $O_3$(x=0.1-0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}$S $r_{0.3}$Ti $O_3$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.00 nm.m.m.m.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.648-651
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• 2004

Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

• ETRI Journal
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• 제45권2호
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• pp.338-345
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• 2023

A filtering power divider based on air-filled substrate-integrated waveguide (AFSIW) technology is proposed in this study. The AFSIW structure is used in the proposed filtering power divider for substantially reducing the transmission losses. This structure occupies a large area because of the use of air as a dielectric instead of typical dielectric materials. A filtering power divider provides power division and frequency selectivity simultaneously in a single device. The proposed filtering power divider comprises three AFSIW cavities. The filtering function is achieved using symmetrical inductive posts. The input and output ports of the proposed circuit are realized by directly connecting coaxial lines to the AFSIW cavities. This transition from the coaxial line to the AFSIW cavity eliminates the additional transitions, such as AFSIW-SIW and SIW-conductor-backed coplanar waveguide, applied in existing AFSIW circuits. The proposed power divider with a second-order bandpass filtering response is fabricated and measured at 5.5 GHz. The measurement results show that this circuit has a minimum insertion loss of 1 dB, 3-dB fractional bandwidth of 11.2%, and return loss exceeding 11 dB.

• 한국전자통신학회논문지
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• 제15권5호
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• pp.827-834
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• 2020

본 연구는 주파수 체배기 이론을 이용하여 초고주파 항공용 레이다를 위한 3차 고조파 믹서 설계에 대한 연구이다. 기본 믹서 설계 방법과는 달리 주파수 체배기 이론을 이용하여 국부 주파수(LO)의 3차 고조파 성분이 최대가 되는 게이트 바이어스 전압을 선택하여 중간주파수(IF)에서 3차 고조파 혼합(mixing) 성분이 최대가 되도록 하였다. 제안한 고조파 믹서는 플라스틱 패키지의 상용 GaAs MESFET 소자를 이용하여 설계 및 제작하여 기존 초고주파 믹서의 높은 변환손실, 회로 복잡성, 높은 가격 및 제작 복잡도를 개선할 수 있었다. 제안한 설계 방법을 이용한 3차 고조파 믹서는 33 GHz ~ 36 GHz 대역에서 8 ~10 dB 변환손실 특성 및 0 dBm 선형성 (P1dB) 특성을 나타내었다.

• Journal of Electrical Engineering and Technology
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• 제12권5호
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• pp.2007-2013
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• 2017

In order to give hydrophobic surface properties on carbon steel, the fluorinated amorphous carbon films were prepared by using linear 2.45GHz microwave PECVD device. Two different process approaches have been tested. One is direct deposition of a-C:H:F films using admixture of $Ar/CH_4/CF_4$ working gases and the other is surface treatment using $CF_4$ plasma after deposition of a-C:H film with $Ar/CH_4$ binary gas system. $Ar/CF_4$ plasma treated surface with high $CF_4$ gas ratio shows best hydrophobicity and durability of hydrophobicity. Nanometer scale surface roughness seems one of the most important factors for hydrophobicity within our experimental conditions. The properties of a-C:H:F films and $CF_4$ plasma treated a-C:H films were investigated in terms of surface roughness, hardness, microstructure, chemical bonding, atomic bonding structure between carbon and fluorine, adhesion and water contact angle by using atomic force microscopy (AFM), nano-indentation, Raman analysis and X-ray photoelectron spectroscopy (XPS).

• 한국인터넷방송통신학회논문지
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• 제12권6호
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• pp.241-249
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• 2012

전 세계적으로 전파자원의 수요의 급증으로 전파 자원의 효율적 이용을 위해 많은 선진국들이 초광대역 무선 전송 제반 기술을 효율적으로 이용하기 위한 기술연구를 진행하고 있다. 초광대역 통신의 특징은 넓은 가용 대역폭으로 인하여 고속 전송에 유리하며 짧은 전송 거리는 주파수 재 사용률을 높일 수 있고, 보안성을 유지하기에 유리하다. 하지만 서로 다른 서비스간에 주파수 간섭으로 인해 혼선을 빚는 일이 발생하고 있는데 아직 이에 관한 연구가 미흡한 실정이다. 한정된 주파수 자원을 보다 효율적으로 활용하기 위해서는 새로운 주파수 회피기술의 개발뿐만 아니라 주파수 간섭에 의한 피해를 줄이고 무선전파 장애 요소 발생을 최소화 할 수 있는 주파수 간섭 기준 설정과 관련된 각종 대책의 정립이 필요하다. 따라서, 본 논문의 목적은 광대역 통신 무선 Access Network 기술 동향 및 구현방안에 관한 연구를 통해 RSS 분기국사(또는 모국사)에서 특정지역(집단단지, 도서지역)에 이르는 광대역 무선통신 Network 분석 및 단거리 광대역 무선전송을 위한 국내외 기술동향 분석 등 소형 무선장비 전송을 위한 기술동향을 분석하여 마이크로웨이브 통신의 활성화와 효율을 향상시키는데 있다.

• 방사선산업학회지
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• 제17권2호
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• pp.199-207
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• 2023

Since seeds can be directly used as food resources as well as for crop cultivation or preservation of genetic resources, it is essential to develop high-quality seed processing technology to increase agricultural productivity. Seed treatment means processing technologies of seeds through physical or chemical treatment processes from after harvesting seeds to before sowing of seeds to improve germination and growth rate, durability, and immunity, etc. Since chemical seed treatment technology using pesticides or plant growth regulators has problems of environmental pollution and human toxicity, it is desired to develop an alternative technology. As a physical seed treatment method, various technologies such as ionizing radiation, plasma, microwave, and magnetic field are being developed, and some of them are being used practically. In this paper, I will summarize the mechanism of seed priming and disinfection, and the advantages and disadvantages of application, focusing on these physical seed treatment methods. Low dose or moderate intensity ionizing radiation, microwave, low-temperature plasma, and magnetic field treatments often promoted seed germination and seedling growth. However, effective removal of direct seed pathogens at these treatment intensities appears to be difficult. And it has been shown that relatively high-dose electron beam treatment using low-energy electron beams kills microorganisms on the seed surface and hull layer while not damaging the inner tissue of the seed, and is also effectively used for seed treatment on a commercial scale. In order to put the physical seed treatment technology to practical use in Korea, it is necessary to develop an economical scale treatment device along with the development of individual treatment technology to each crop.