• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.131-134
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• 2003

[ $ZnWO_4$ ] shows excellent frequency selectivity due to its high quality factor($Q{\times}f$) at microwave frequencies. However, in order to use $ZnWO_4$ as multilayered wireless communication components, its other properties such as sintering temperature($1050^{\circ}C$), ${\tau}_f$ ($-70ppm/^{\circ}C$) and ${\varepsilon}_r(15.5)$ should be modified. In present study, $TiO_2$ and LiF were used to improve the microwave dielectric and sintering properties of $ZnWO_4$. $TiO_2$ additions to $ZnWO_4$ changed ${\tau}_f$ from negative to positive value, and also increased ${\varepsilon}_r$ due to its high ${\tau}_f$ ($+400ppm/^{\circ}C$) and ${\varepsilon}_r$(100). At 20 mol% $TiO_2$ addition, ${\tau}_f$ was controlled to near zero $ppm/^{\circ}C$ with ${\varepsilon}_r=19.4$ and $Q{\times}f=50000GHz$. However, the sintering temperature was still high to $1100^{\circ}C$. LiF addition to the $ZnWO_4+TiO_2$ mixture was greatly reduced the sintering temperature from $1100^{\circ}C$ to $850^{\circ}C$ due to liquid phase formation. Also LiF addition decreased the ${\tau}_f$ value due to its high negative ${\tau}_f$ value. Therefore, by controlling the $TiO_2$ and LiF amount, temperature stable LTCC material in the $ZnWO_4$-TiO_2-LiF$ system could be fabricated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.59-62
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• 1996

The effect of NiO addition on the microstructure and microwave dielectric properties of (Zr$_{0.8}$Sn$_{0.2}$)TiO$_4$(ZST) was investigated. With the NiO addition, a dense ZST body of density higher than 95% has been achieved in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be NiTiO$_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_{f}$decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in term of the second phase. The ZST ceramics with small amount of additive gave $\varepsilon$$_{r}$=38, Q=7000 at 7 GHz and TC$_{f}$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by previous investigation.stigation.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.473-475
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• 2000

The (1-x)$MgTiO_3-xSrTiO_3$$(x=0.03{\sim}0.04)$ ceramics were fabricated by conventional mixed oxide method. The structural properties and microwave dielectric properties were investigated by XRD, SEM and HP8757D network analyzer. In the $0.96MgTiO_3-0.04SrTiO_3$ ceramics, the perovskite structure $SrTiO_3$ and ilmenite structure $MgTiO_3$ phases were coexisted. The dielectric constant(${\varepsilon}_r$ and temperature coefficient of resonant frequency(${\tau}_f$) was increased with addition of $SrTiO_3$. In the case of $0.96MgTiO_3-0.04SrTiO_3$ ceramics sintered at $1325^{\circ}C$, the dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.13, 7956(at 7.27GHz), +1.7568ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.282-286
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• 2003

We investigated the effects of calcination temperature and sintering additives on the sintering behaviors and microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$. Highly densified samples were obtained at the sintering temperatures below $1000^{\circ}C$ with additions of 0.45 wt.% $Bi_2O_3$ and 0.55 wt.% $V_2O_5$. From the examination of the existing phases and microstructures before and after sintering of $(Zn_{0.8}Mg_{0.2})TiO_3$ system calcined at the various temperatures ranging from $800^{\circ}C$ to $1000^{\circ}C$, it was found that high $Q{\times}f_o$ values were obtained when unreacted or second phases in calcined body were reduced. When calcined at $1000^{\circ}C$ and sintered at $900^{\circ}C$, it consists of hexagonal as a main phase with uniform microstructure and exhibits $Q{\times}f_o$ value of 42,000 GHz and dielectric constant of 22.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.926-931
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• 2000

The microwave dielectric properties and the microstructures as a mole fraction of (1-x)ZnNb$_2$O$_{6}$-xPb$_{5}$Nb$_4$O$_{15}$ ceramics with CuV$_2$O$_{6}$, Sb$_2$O$_3$ and glass(ZNPN ceramics) was investigated. 0.98ZN-0.02PN ceramics containing 1.5 wt% CuV$_2$O$_{6}$ 1.0 wt% Sb$_2$O$_3$ and 1.0 wt% glass had a dielectric constant($\varepsilon$$_{r}$) of 23, Qxf$_{o}$ value of 15000 and TCF(Temperature Coefficient of resonance Frequency) of -25 ppm/$^{\circ}C$ and it is possible to be co-fired with Ag electrode at 90$0^{\circ}C$. As sintered temperature increases over 90$0^{\circ}C$ the grain size of ZNPN ceramics was increasing for growth and it has poor co-fired properties with Ag electrode.e.ctrode.e.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.323-323
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• 2007

Influence of $La_2O_3$ addition to $CaO-B_2O_3$-based glass on the water leaching resistance of the glass was first investigated. The optimized $La_2O_3-CaO-B_2O_3$(LCB) glass was ball milled for varying time, followed by mixing with $Al_2O_3$ crystalline phase to form $Al_2O_3$-LCB glass composites at $875^{\circ}C$ for 1h. Microwave dielectric properties of the composites were investigated as a function of the ball milling time of the LCB glass. Dielectric constant and quality factor of the composites were 6.31 and 13856 GHz, respectively, when the LCB glass was ball milled for 2h prior to mixing with $Al_2O_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.324-324
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• 2007

Influence of $La_2O_3$ addition to $ZnO-B_2O_3$-based glass on the water leaching resistance of the glass was first investigated. The optimized $La_2O_3-ZnO-B_2O_3$ (LZB) glass was ball milled for varying time, followed by mixing with $Al_2O_3$ crystalline phase to form $Al_2O_3$-LZB glass composites at $875^{\circ}C$ for lh. Microwave dielectric properties of the composites were investigated as a function of the ball milling time of the LZB glass. Dielectric constant and quality factor of the composites were 6.01 and 11676 GHz, respectively, when the LZB glass was ball milled for 2h prior to mixing with $Al_2O_3$.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.328-332
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• 2003

Ceramics of xCaTiO$_3$-(1-x)Li$_{0.5}$Nd$_{0.5}$TiO$_3$(xCT-(1-x)LNT) series have been prepared by the mixed oxide route. Powders were calcined at 110$0^{\circ}C$ ; cylindrical specimens were fired at temperatures in the range 1300-150$0^{\circ}C$. Sintered products were typically 90-95% dense. The microstructures were dominated by angular grains typically 1.3${\mu}{\textrm}{m}$ to 3.5 ${\mu}{\textrm}{m}$ in size. Twinning in the microstructures was analysed using Electron Back Scattered Diffraction (EBSD). Microwave dielectric properties of xCT-(1-x)LNT at 2.1 GHz ($\varepsilon$$_{r}$, Qxf, and $\tau$r) were 170,3800 GHz and 744 ppm/$^{\circ}C$ for pure CaTiO$_3$ and 80,2000 GHz and -240 ppm/$^{\circ}C$ for LNT. The $\tau$r decreases almost linearly from 744 for pure CaTiO$_3$ to -240 for pure LNT.LNT.T.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.29-34
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• 2006

The effects of $B_2O_3$ addition on the low-temperature sintering behavior and microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ ceramic system were investigated. Highly dense samples were obtained at the sintering temperatures below $900^{\circ}C$. The $Q{\times}f_o$ values were determined by the microstructures and sintering shrinkages which are affected by the amount of $B_2O_3$ and sintering temperature. Temperature coefficient of resonance frequency($T_f$) changes to a positive value with increasing the amount of $B_2O_3$ due to the increased amount of rutile phase which is one of the reaction products between $(Zn_{0.8}Mg_{0.2})TiO_3$ and $B_2O_3$. For $6.19 moi.{\%}B_2O_3$-added $(Zn_{0.8}Mg_{0.2})TiO_3$ system, it exhibits ${\epsilon}_r$ = 23.5, $Q{\times}f_o$ = 53,000 GHz, and $T_f$ = 0 ppm/$^{\circ}C$ when sintered at $900^{\circ}C$ for 5 h.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1197-1202
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• 1998

To check the possibility for microwave sintering of MLCC(multi layer ceramic capacitor) the tape cast-ed BaTiO3 thick films in zirconia insulation box were sintered by the domestic microwave oven. Microwave sintered samples had higher density lower porosity than coventionally sintered ones. but they didn't show Z5U electrical properties due to short sintering time about 15 minutes.