• 제목/요약/키워드: Microwave Devices

검색결과 220건 처리시간 0.025초

마이크로스트립 공진기와 Rutile-loaded Cavity 공진기로 측정한 $YBa_2$$Cu_3$$O-{7-$\delta$}$박막의 마이크로파 표면저항 비교 연구 (A Comparative Study for the Microwave Surface Resistances of $YBa_2$$Cu_3$$O-{7-$\delta$}$ Films Measured with a Microstrip Resonator and a Inutile-loaded Cavity Resonator)

  • O. K. Kwon;H. J. Kwon;Lee, J. H.;Jung Hur;Lee, Sang-Young
    • Progress in Superconductivity
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    • 제2권2호
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    • pp.86-91
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    • 2001
  • Temperature dependences of the unloaded Q(Q$_{0}$) and the resonant frequency ( $f_{0}$) of YB $a_2$C $u_3$ $O_{7-{\delta}}$ (YBCO) microstrip ring resonators and rutile-loaded cylindrical cavity resonators were measured at low temperatures. Dc magnetron-sputtered YBCO films grown on Ce $O_2$-buffered r-cut sapphire (CbS) substrates were used fur this purpose. The surface resistances ( $R_{s}$) of YBCO films measured by both a microstrip ring resonator and a TE $01\delta$/ mode rutile-loaded cylindrical cavity resonator are compared with each other. It turned out that the values of $R_{s}$ measured by the microstrip resonator technique are comparable to those by the rutile-loaded resonator technique at temperatures lower than ~50 K. However, above 50 K, the $R_{s}$ measured by the microstrip resonator technique appeared higher according to the temperature. Our results show that the current crowding effects near the edge of a microstrip resonator become more significant at temperatures near the critical temperature.emperature.e.e.e.e.e.e.

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Cobalt (Co) Electrode FBAR Devices Fabricated on Seven-Layered Bragg Reflectors and Their Resonance Characteristics

  • Mai Linh;Yim, Mun-Hyuk;Yoon, Gi-Wan;Kim, Dong-Hyun
    • Journal of information and communication convergence engineering
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    • 제1권3호
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    • pp.129-132
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    • 2003
  • In this paper, cobalt (Co)-electrode FBAR devices fabricated on seven-layered Bragg Reflectors are presented along with their resonance characteristics. ZnO films are used as the resonating material in FBAR devices where the Co electrode is 3000${\AA}$ thick. All processes are preformed in an RF magnetron sputtering system. As a result of characterization, the resonance characteristics are observed to depend strongly on the quality of ZnO film and Bragg Reflectors. In addition, the FBAR devices with W/$SiO_2$ reflectors show good resonance characteristics in term of return loss and quality-factor (Q-factor).

Controllable electromagnetically-induced transparency-like response in a bilayer metamaterial

  • Hwang, J.S.;Yoo, Y.J.;Kim, Y.J.;Kim, K.W.;Rhee, J.Y.;Park, S.Y.;Lee, Y.P.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.234.2-234.2
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    • 2015
  • Recently, the electromagnetically-induced transparency (EIT)-like effect in metamaterials has attracted enormous interest. Metamaterial analogs of EIT enable promising applications in slow-light devices, low-loss metamaterial, quantum optics, and novel sensors. In this work, we experimentally and numerically studied a bilayer metamaterial for controllable EIT-like spectral response at microwave frequencies. Bilayer metamaterial consists of two snake-shape resonators (SSRs) with one and two bars. The transmission spectra were measured in a frequency range of 4 - 8 GHz in an anechoic chamber at normal incidence. It is found that two SSRs in the metamaterial are activated in bright modes, and the coupling between two bright modes leads to the EIT-like effect, which results in the enhanced transmission at 5.61 GHz. Furthermore, we confirm that the EIT-like feature could be controlled by adjusting the geometric parameters of metamaterial structure. Our work provides a way to tunable EIT-like effect and various potential applications including filters, sensors, and other microwave devices.

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A NOVEL APPROACH TO COMPACTLY BRAZE ALUMINUM ALLOYS

  • Qian, Yiyu;Dong, Zhangui;Liu, Jun
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.545-550
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    • 2002
  • In order to ensure the signal could be transported cocrrectly, the microwave devices made of Aluminmn alloys must be assembled and brazed flaw-freely. In this paper, a new approach of using contact reactive brazing (CRB) process to realize the compact brazing of Aluminum alloys was put forward. The reason for this is that CRB, which realizes bonding depending on the liquid alloy produced by metallurgy reaction between the materials to be joined, overcomes the limitation of traditional brazing that the macroscopically disorganized filling flow of liquid filler metal would result in defects in brazed seam. Joint ofLF21 (AA3003) with the compactness of over 95% was brazed by the method of CRB using Si powder as an interlayer. At last, the influence of the physical parameter related to the Si powder interlayer on the compactness of the joints was investigated in detail.

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Accurate Measurements of the Unloaded Q of a Dielectric-loaded High-Q $TE_{01{\delta}}$ mode Cavity Resonator with HTS Endplates

  • Kwon, H.J.;Hur, Jung;Lee, Sang-Young
    • Progress in Superconductivity
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    • 제1권1호
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    • pp.36-41
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    • 1999
  • Methods for mode identification and accurate measurements of the unloaded Q ($Q_0$) of a dielectric-loaded $TE_{01{\delta}}$ mode cavity resonator with HTS endplates are proposed. A resonator with a sapphire rod and $YBa_2Cu_3O_{7-x}$(YBCO) endplates was prepared and its microwave properties were studied at temperatures above 30 K. The $TE_{01{\delta}}$ mode $Q_0$ of the resonator, designed to work as a tunable resonator with variations in the gap distance (s) between the sapphire rod and the top YBCO, was more than 1000000 at s = 0 mm and at 30 K with the resonant frequency of 19.56 GHz. The $TE_{01{\delta}}$ mode $Q_0$ decreases as s increases for s < 2 mm until mode couplings between the $TE_{01{\delta}}$ mode and other modes appeared at s = 2 mm. Significant dependence of the $TE_{01{\delta}}$ mode $Q_0$ on the input and output coupling constants was also observed. Applications of the open-ended $TE_{01{\delta}}$ mode cavity resonator for a tunable resonator with a very high Q as well as a characterization tool for the surface resistance measurements of HTS films are described.

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수직으로 전이되는 마이크로스트립의 접지용 방사형 스터브 (Grounding Radial Stub for the Vertical Microstrip Transition)

  • 권덕규;이종호;이해영
    • 대한전자공학회논문지TC
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    • 제37권3호
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    • pp.58-63
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    • 2000
  • 본 논문에서는 고집적 3차원 초고주파 소자 및 모듈에서 발생되는 수직 전이 구조의 효과적인 연결을 위하여 방사형 스터브 (radial stub)를 사용한 접지 방법을 제시하였다. 제안된 구조는 완전 해석법 (full-wave analysis)인 유한 요소법 (finite element method)을 이용하여 해석하였고 제작을 통하여 그 결과를 검증하였다. 해석결과, 2.S~6.3 GHB 주파수 범위에서 반사손실 (return loss) IS dB 이상, 삽입손 실 (insertion loss) 0.5 dB 이하의 특성을 가짐을 확인하였다. 본 해석 결과는 고집적, 소형화를 위한 3차 원 구조를 갖는 초고주파 소자 및 모듈의 공통 접지 연결을 위해 유용하게 사용될 수 있다.

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$BaO-Sm_2O3-TiO_2$계 마이크로파 유전체의 합성 및 그 특성에 관한 연구 (A study of the synthesis and the properties on microwave dielectric material of $BaO-Sm_2O_3-TiO_2$ system)

  • 이용석;김준수;이병하
    • E2M - 전기 전자와 첨단 소재
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    • 제10권3호
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    • pp.274-283
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    • 1997
  • These days, according to surprising development of communication enterprises, every soft of devices is getting smaller and cheaper. Among these Devices, microwave dielectric ceramics are studied and progressed briskly as the materials of dielectric resonator. Dielectric properties of BaO-S $M_{2}$ $O_{3}$-Ti $O_{2}$, one of the BaO Lnsub 2/ $O_{3}$-Ti $O_{2}$ (Ln=La, Sm, Nd, Pr…) system, synthesized by solid-reaction and coprecipitation method were investigated. Disk-type samples were sintered at 1250-1400.deg. C for 2hrs. As a result, single phase was not synthesized in both method. First created the second phase of S $M_{2}$ $Ti_{2}$ $O_{7}$, and then the last phase of $Ba_{3.75}$S $m_{9.5}$ $Ti_{18}$ $O_{54}$, Ti $O_{2}$, and $Ba_{2}$ $Ti_{9}$ $O_{20}$. When the sample was sintered at 1280.deg. C (in solid reaction method) and at 1310.deg. C (in coprecipitation method), it obtained highest dielectric constant (72.96 and 71.70, respectively) and high Q value. Above that temperature, dielectric constant and Q value decreased because of lattice defect according to oxygen vacancies........

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A Study on the Design and Characteristics of thin-film L-C Band Pass Filter

  • Kim In-Sung;Song Jae-Sung;Min Bok-Ki;Lee Won-Jae;Muller Alexandru
    • KIEE International Transactions on Electrophysics and Applications
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    • 제5C권4호
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    • pp.176-179
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    • 2005
  • The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.