• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1534-1535
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• 2005

Highly luminescent efficiency phosphors have been successfully produced by surface modification and microwave irradiation treatment. The SEM image and XRD analysis reveal that the surface morphology of the white-light phosphors can be notably modified by microwave irradiation and exhibit with better crystalline property. The VUV PL spectra show that the microwave irradiation treatment can effectively enhance the luminescent efficiency by a factor of 1.5 times for intensity compared to that without microwave treatment. A further improvement in all visible emission can be made by modifying surface composition through MgO coating on the phosphor powder. These results demonstrate that such a simple approach can provide for improving luminescent efficiency of phosphors for the optoelectronic devices.

• 한국광학회지
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• 제17권5호
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• pp.475-479
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• 2006

본 논문에서는 폴리머 링 광공진기를 이용하여 집적광학형 K-band용 마이크로웨이브 대역통과 필터를 제안하고 구현하였다. 특히, 열광학 효과를 이용하여 광공진기의 공진파장을 변화시킴으로써 대역통과 필터의 전달특성을 전기적으로 조절하였다. 측정된 필터의 중심주파수는 20 GHz, 소멸비는 약 15 dB, 3 dB 대역폭은 2 GHz, 그리고 Q값은 10이었다. 마이크로웨이브 필터에서 중심주파수의 출력특성을 27 dB범위 내에서 ${\sim}6.7dB/mW$로 조절할 수 있었다. 전기적으로 조절되는 전달특성을 갖는 이 필터는 마이크로웨이브스위치 등으로 응용할 수 있을 것으로 기대된다.

• Nuclear Engineering and Technology
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• 제48권5호
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• pp.1219-1229
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• 2016

The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or g fields. To this end, theoretical and experimental investigations of microwave oscillating system for outer-space applications were carried out. Radiation effects on the transient parameters and electrical properties of the proposed devices have been studied in detail with the application of computer programming. Also, the oscillation parameters, power characteristics, and bias current were plotted under the influence of different ${\gamma}$ and neutron irradiation levels. Finally, shelf or oven annealing processes were shown to be satisfactory techniques to recover the initial characteristics of the irradiated devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.373-373
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• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1016-1018
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• 1995

In this paper, we studied the electrical and the microwave properties of the amorphous $As_{10}Ge_{15}Te_{75}$ thin film. The electrical properties of a-$As_{10}Ge_{15}Te_{75}$ thin film were examined d.c. and a.c. bias with annealing condition. As the result of the electrical properties, we observed the physical characteristics of a-$As_{10}Ge_{15}Te_{75}$ thin film such as the density of defect states, characteristic relaxation time, localized density of states, and localized wave function by using CBH and QMT model. We also examined the microwave conduction properties before and after d.e. switching.

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.539-542
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• 2002

The effect of the superconducting film thickness on the surface resistance has been investigated. Superconducting YBCO thin films have been grown on MgO substrates by pulsed laser deposition. The dependence of the orientation of YBCO film on thickness has been investigated by X-ray diffraction technique. X-ray diffraction indicated that the film orientation was changed by increasing the film thickness and by changing the substrate temperature. The microwave properties of the films with mixed orientations of a-axis and c-axis will be reported for the applications of microwave devices.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2000년도 전력전자학술대회 논문집
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• pp.90-94
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• 2000

A conventional power supply to drive a microwave oven has ferro-resonant transformer and high voltage capacitor(HVC). Though it is simple transformer is bulky heavy and has low-efficiency. To improve this defect a high frequency switching inverter-type power supply has been investigated an developed. in recent years. But because of it's additional circuit and devices inverter-type power supply is more expensive than conventional one. In this paper The design procedure of a novel HVC embedded high frequency transformer is proposed for down-sizing and cost reduction. Also transformer equivalent circuit model is derived by FEM analysis and parameter measurements. And the operation of proposed HVC embedded transformer is verified by simulation and experimental results.

• 전기학회논문지
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• 제56권7호
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• pp.1282-1287
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• 2007

We investigated the damage of the CMOS IC which manufactured three different technologies by high power microwave. The tests separated the two methods in accordance with the types of the CMOS IC located inner waveguide. The only CMOS IC which was located inner waveguide was occurred breakdown below the max electric field (23.94kV/m) without destruction but the CMOS IC which was connected IC to line organically was located inner waveguide and it was occurred breakdown and destruction below the max electric field. Also destructed CMOS IC was removed their surface and a chip condition was analyzed by SEM. The SEM analysis of the damaged devices showed onchuipwire and bondwire destruction like melting due to thermal effect. The tested results are applied to the fundamental data which interprets the combination mechanism of the semiconductors from artificial electromagnetic wave environment and are applied to the data which understand electromagnetic wave effects of electronic equipments.

• 전자공학회논문지D
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• 제34D권2호
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• pp.1-9
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• 1997

For the reduction of parasitic inductance and matching of bonding wire in the package of microwave devices, we propose multiple bonding wires buried in a dielectric material of FR-4 composite. This structure is analyzed using the method of moments (MoM) and compared with the common bondwires and ribbon interconnections. The FR-4 composite is modelled by the cole-cole model which can consider the loss and the variation of the permittivity in a frequency. At 20 GHz, the parasitic reactance is reduced by 90%, 80%, 60% compared to those of a single bonding wire in air, double bonding wires in air and ribbon interconnection in air, respectively. Also, the new bondwire shows very good matching of 60.ohm characteristic impedance and has 15dB, 10dB, 5dB improvement of the return loss and 2.5dB, 0.7dB, 0.2dB improvement of the insertion loss compared to the common interconnections. This technique can minimize the parasitic effect of bondwires in microwave device packaging.

• 반도체디스플레이기술학회지
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• 제15권4호
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• pp.22-26
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• 2016

In this paper, we measured the efficiency of the receiver for 5.8GHz Microwave Smartphone Charging. We have designed and fabricated 1W and 2W power amplifier, respectively. A 1W power amplifier used a TC3531 power device of TRANSCOM Inc. In addition, a 2W power amplifier using the two TC3531 devices was constructed with divider and combiner. We used the Wilkinson divider theory for divider and combiner. The voltage was measured using the 1W and 2W power amplifier and integrated receivers to the distance of 50cm.