• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.1
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• pp.107-114
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• 2021

In this paper, a planar transistor oscillator for X-band using a newly proposed L-shaped monopole slot resonator is proposed. For planar design, an L-shaped monopole slot with an open-end is used as a resonator for a transistor oscillator. As a result of the simulated design of the resonator in three stages, a high Q value of 1169.84 and a high insertion loss of 49.934 dB were identified. The results of the final design and manufactured oscillator measurements confirmed that the oscillation output is greater than 7 dBm and has good phase noise characteristics of -58 dBc/Hz at 100 kHz offset. The proposed oscillator is planar and has the advantage of being directly applicable to microwave integrated circuit technology. It also has the advantage of being able to reduce its size as it can only be implemented in microstrip form without additional devices such as metal cavities and tuning screws in 3D structures, as in the case of a DRO (dielectric resonance oscillator).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.9
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• pp.1165-1171
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• 2020

In this study, we designed a single antenna taking into account the performance, such as return loss and radiation pattern, of 28 GHz and 38 GHz array antennas for 5G mobile devices. In millimeter wave band communication, high path loss occurs between transmission and reception, unlike in conventional microwave bands. In the design of array antennas for 5G millimeter wave terminals, antenna performance such as antenna gain, bandwidth, isolation between antenna elements, side-lobe level(SLL), etc. should be further considered. The performance of the designed array antennas was analyzed by spacing the antenna elements at half a wavelength. Our results proved the validity of the design and its suitability for applications in mm-Wave by showing that the 28 GHz and 39 GHz array antennas had antenna gains of 13.5 dBi and 11.3 dBi and return losses below -18.4 dB and -20 dB, correspondingly.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.31.1-31.1
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• 2009

Carbon nanotubes (CNTs) are attractive material because of their superior electrical, mechanical, and chemical properties. Furthermore, their geometric features such as a large aspect ratio and a small radius of curvature at tip make them ideal for low-voltage field emission devices including backlight units of liquid crystal display, lighting lamps, X-ray source, microwave amplifiers, electron microscopes, etc. In field emission devices for display applications, the phosphor anode is positioned against the CNT emitters. In most case, light generated from the phosphor by electron bombardment passes through the anode front plate to reach observers. However, light is produced in a narrow depth of the surface of the phosphor layer because phosphor particles are big as much as several micrometers, which means that it is necessary to transmit through the phosphor layer. Hence, a drop of light intensity is unavoidable during this process. In this study, we fabricated a transparent cathode back plate by depositing an ultra-thin film of single walled CNTs (SWCNTs) on an indium tin oxide (ITO)-coated glass substrate. Two types of phosphor anode plates were employed to our transparent cathode back plate: One is an ITO glass substrate with a phosphor layer and the other is a Cr-coated glass substrate with phosphor layer. For the former case, light was radiated from both the front and the back sides, where luminance on the back was ~30% higher than that on the front in our experiments. For the other case, however, light was emitted only from the cathode back side as the Cr layer on the anode glass rolled as a reflecting mirror, improving the light luminance as much as ~60% compared with that on the front of one. This study seems to be discussed about the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the cathode back side. The experimental procedures are as follows. First, a CNT aqueous solution was prepared by ultrasonically dispersing purified SWCNTs in deionized water with sodium dodecyl sulfate (SDS). A milliliter or even several tens of micro-liters of CNT solution was deposited onto a porous alumina membrane through vacuum filtration. Thereafter, the alumina membrane was solvated with the 3 M NaOH solution and the floating CNT film was easily transferred to an ITO glass substrate. It is required for CNT film to make standing CNTs up to serve as electron emitter through an adhesive roller activation.

• Proceedings of the Korean Ceranic Society Conference
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• 2005.06a
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• pp.1-112
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• 2005

This report is results of a research on recent R&D trends in electroceramics, mainly focusing on the papers submitted to the organizing committee of the International Conference on Electroceramics 2005 (ICE-2005) which was held at Seoul on 12-15 June 2005. About 380 electroceramics researchers attended at the ICE-2005 from 17 countries including Korea, presenting and discussing their recent results. Therefore, we can easily understand the recent research trends in the field of electroceramics by analyses of the subject and contents of the submitted papers. In addition to the analyses of the papers submitted to the ICE-2005, we also collected some informations about domestic and international research trends to help readers understand this report easily. We analysed the R&D trends on the basis of four main categories, that is, informatics electroceramics, energy and environment ceramics, processing and characterization of electroceramics, and emerging fields of electroceramics. Each main category has several sub-categories again. The informatics ceramics category includes integrated dielectrics and ferroelectrics, oxide and nitride semiconductors, photonic and optoelectronic devices, multilayer electronic ceramics and devices, microwave dielectrics and high frequency devices, and piezoelectric and MEMS applications. The energy and environment ceramics category has four sub-categories, that is, rechargable battery, hydrogen storage, fuel cells, and advanced energy conversion concepts. In the processing and characterization category, there exist domain, strain, and epitaxial dynamics and engineering sub-category, innovative processing and synthesis sub-category, nanostructured materials and nanotechnology sub- category, single crystal growth and characterization sub-category, theory and modeling sub-category. Nanocrystalline electroceramics, electroceramics for smart sensors, and bioceramics sub-categories are included to the emerging fields category. We hope that this report give an opportunity to understand the international research trend, not only to Korean ceramics researchers but also to science and technology policy researchers.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.771-776
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• 2004

[ $Ba(Zr_{0.08}Ti_{0.92})O_3$ ] polycrystal was grown by floating zone technique with two ellipsoidal mirrors using the $8\%$of Zr-modified BZT ceramics as both a feed rod and a seed crystal. In order to study the annealing effect, a part of the grown crystal was sliced and annealed in the oxygen atmosphere at $1,200^{\circ}C$ for 10 h. The dielectric constant and loss at 10 kHz, 100 kHz, and 1 MHz were measured in the temperature range between $-100^{\circ}C$ and $150^{\circ}C$ to investigate the dielectric properties of the grown polycrystal. The electric-field dependence of the dielectric constant at 10 kHz and 100 kHz was studied by measuring the dielectric constants as a function of the biased-electric fields which ran from -15 kV/cm to 15 kV/cm. Due to the effect of annealing in the oxygen atmosphere, the electric-field tunability of dielectric constants increased from $47.5\%$ to 5 to and the figure of merit for this material from 39.6 to 46.4. Since the figure of merit can be increased to more than 46.4 by increasing the maximum value of the biased-electric fields to more than 15 V/cm, this material nay have a possibility for applications in microwave tuning devices at room temperature.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.6
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• pp.44-52
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• 2017

In this paper, we propose a DFD (Digital Frequency Discriminator) design that has better frequency discrimination and a smaller size. Electronic warfare equipment can analyze different types of radar signal such as those based on Frequency, Pulse Width, Time Of Arrival, Pulse Amplitude, Angle Of Arrival and Modulation On Pulse. In order for electronic warfare equipment to analyze radar signals with a narrow pulse width (less than 100ns), they need to have a special receiver structure called IFM (Instantaneous Frequency Measurement). The DFD (Digital Frequency Discriminator) is usually used for the IFM. Because the existing DFDs are composed of separate circuit devices, they are bulky, heavy, and expensive. To remedy these shortcomings, we use a three delay line ($1{\lambda}$, $4{\lambda}$, $16{\lambda}$) in the DFD, instead of the four delay line ($1{\lambda}$, $4{\lambda}$, $16{\lambda}$, $64{\lambda}$) generally used in the existing DFDs, and apply the microwave integrated circuit method. To enhance the frequency discrimination, we detect the pulse amplitude and perform temperature correction. The proposed DFD has a frequency discrimination error of less than 1.5MHz, affording it better performance than imported DFDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.227-232
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• 2000

$MgTiO_3$thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Epitaxial $MgTiO_3$thin films were obtained on sapphire (c-plane$A1_2O_3$$MgTiO_3$thin films deposited on $SiO_2/Si$ and platinized silicon ($Pt/Ti/SiO_2/Si$) substrates were highly oriented. $MgTiO_3$thin films grown on sapphire were transparent in the visible and had a sharp absorption edge about 290 nm. These $MgTiO_3$thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm, which was examined by AFM. We have investigated the dielectric properties of the $MgTiO_3$thin films in $MIM(Pt/MgTiO_3/Pt)$ capacitors. Dielectric constant and loss of $MgTiO_3$thin films deposited by PLD were about 24 and 1.5% at 1 MHz, respectively. These $MgTiO_3$thin films also exhibited little dielectric dispersion.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.15 no.1
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• pp.71-81
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• 2005

The purposes of this study was to collect, analyze, and describe the MF exposure levels from subways in Korea and to measure and evaluate the MF levels generated from electric appliances used at general homes. The target subway lines were Seoul Metropolitan Line 1 to Line 8, Bundang Line, Incheon Line, Daegu Line, Gwangju Line, and Busan Line 1 and Line 2. We measured at each station in those subway lines and, all the train types (pantograph-equipped, motor-equipped, and common), and platform types(facing and isolating) were investigated by the distance(80, 200, 400 cm) from the train on 19 targeted subway lines using 3 magnetic field measuring devices (EMDEXII, Enertech Co.) during the survey from January till October, 2004. On the other hand, the levels of the 60Hz magnetic fields generated from 14 items of home electric appliances such as electric blankets, hair dryers, electric razors, etc. were measured at 10 general homes using 5 EMDEXII meters with a sampling interval of 1.5 second by the distance(surface, 30, 50, 100, 300cm ) from the target electric appliances. The survey results in the whole subway lines examined in this study were as follows; Seoul Metropolitan Line 4 using AC(alternating current) power source showed the highest mean value of $2.85{\mu}T$, followed by Seoul Metropolitan Line 1 running between Seoul and Incheon using AC($2.78{\mu}T$), Seoul Metropolitan Line 1 between Seoul and Uijongbu using AC($2.73{\mu}T$), Bundang Line using AC($1.79{\mu}T$), Seoul Metropolitan Line 1 connected from Yongsan using AC($1.67{\mu}T$), Seoul Metropolitan Line 1 between Seoul and Suwon using AC($0.79{\mu}T$), and so on. In general, the intensity of the magnetic field in the subway systems in Korea was significantly higher when using AC($2.14{\pm}0.91{\mu}T$) than when using DC($0.29{\pm}0.44{\mu}T$) power source. Among the home electric appliances examined, microwave ovens showed the highest mean value of $7.69{\mu}T$, followed by hair dryers($6.47{\mu}T$), vacuum cleaners($5.27{\mu}T$), televisions ($2.26{\mu}T$), electric blankets($1.38{\mu}T$), personal computers ($0.81{\mu}T$), and so on. Two items of electric appliances showed the excess value of $0.2{\mu}T$ at the distance of 30cm in the MF exposure level; electric razors $1.58{\pm}2.13{\mu}T$ and vacuum cleaners $0.48{\pm}0.44{\mu}T$. As a whole, this study showed a tendency that the shift of the MF levels according to the increase of distance from the electric appliances was lower than those of the results surveyed in UK and USA. As a result, this study is expected to suggest meaningful data for the future study in exposure assessment of magnetic fields and for the establishment of guidelines for subways and electric appliances in Korea. More detailed and large scaled exposure assessment studies should be performed continuously to get the various and useful information on health risk assessment of MFs in Korea.