• Journal of Advanced Navigation Technology
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• v.24 no.5
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• pp.415-422
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• 2020

Federal Communications Commissions (FCC) has adopted a new rule that can provide a 1,200 MHz unlicensed spectrum to maximize the public benefits in the 5.925 ~ 7.125 GHz(6 GHz) band by expanding unlicensed broadband into the 6 GHz band while also ensuring that licensed services that operate in the band continue to thrive. In Korea, the M/W band of 6 GHz has been reallocated to introduce unlicensed services in the 6 GHz band. Considering the national interests, the entire 1,200 MHz will be supplied for the indoor uses, but only the 500 MHz of the lower bandwidth (5925 ~ 6425 MHz) will for the outdoor uses under the limited power to protect the incumbent services. The introduction of unlicensed devices is being actively promoted through the reallocation of the 6 GHz M/W band, but since it is desperately necessary to prepare technical requirements to operate them in Korea. In this paper, the US 6 GHz unlicensed rules has been analyzed, these results will be utilized for establishing Korean technical standards with the unlicensed spectrum expansion.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.8-14
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• 1999

The active devices used at microwave frequency have the different phase shift according to input power. Especially, The difference of the phase shift is large in the saturation region of the amplifier. In this paper, we disigned the phase control system for fixing the different phase shift at device. With the high frequency nonlinear amplifier, we fabricated such system that the phase shift to be fixed automatically using the varible phase shifter. The variable phase shifter fixed total phase variation of the circuit using the information that was obtained from the comparison of imputsignal phase with output signal phase. Even though the input signal is 2-tone or FM type, we could estimate and also fix the phase variation on DUT Dynamic range is about 10dB. It has been experimented at 1960MHz using Teflon (H=31mil, ${\varepsilon}r$=3.2)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.79-79
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• 2008

We report the growth of $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thin films and their substrate-dependent electrical characteristics. BST thin films were deposited on alumina(non-single crystal), $Al_2O_3$(100) substrates by Nd:YAG Pulsed Laser Deposition(PLD) with a 355nm wavelength at substrate temperature of $700^{\circ}C$ and post-deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for 1hours. BST materials had been chosen due to high dielectric permittivity and tunability for high frequency applications, To analyze the oxygen partial pressure effects, deposited films at 1, 10, 50, 100, 150, 200, 300 mTorr. The effects of oxygen pressure on structural properties of the deposited films have been investigated by X-ray diffraction(XRD) and atomic force microscope(AFM), respectively. Then we manufactured a inter-digital capacitor(IDC) patterns twenty fingers and $10{\mu}m$ gap, $700{\mu}m$ length and electrical properties were characterized. The results provide a basis for understanding the growth mechanisms and basic structural and electrical properties of BST thin films as required for tunable microwave devices applications such as varactors and tunable filters.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.61-64
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• 2002

We have optimally designed and implemented by a monolithic microwave integrated circuit(MMIC) the low noise amplifier(LNA) of 5.8GHz band composed of receiver front-end(RFE) in a on-board equipment system for dedicated short range communication using a depletion-mode GaAs MESFET. The LNA is provided with two active devices, matching circuits, and two drain bias circuits. Operating at a single supply of 3V and a consumption current of 18㎃, The gain at center frequency 5.8GHz is 13.4dB, Noise figure(NF) is 1.94dB, Input 3rd order intercept point(lIPS) is 3dBm, and Input return loss(5$_{11}$) and Output return loss(S$_{22}$) is -l8dB and -13.3dB, respectively. The circuit size is 1.2$\times$O.7$\textrm{mm}^2$.EX>.>.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.8 s.111
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• pp.732-738
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• 2006

Divide-by-2 and divide-by-4 circuits which can operate up to 10 GHz are designed. A design method used in these circuits is the TSPC(True Single Phase Clocking) topology. The structure of the TSPC dividers is very simple because they need only a single clock and purely consist of smalt sized cmos devices. Through measurements, we find the fact that in proportion to the bias voltage, the free running frequency increases and the operation region also moves toward a higher frequency region. For operating conditions of bias voltage $3.0{\sim}4.0V$, input power 16dBm and dcoffset $1.5{\sim}2.0V$, 5 GHz and 2.5 GHz output signals divided by 2 and 4 are measured. The layout size of the divide-by-2 circuit is about $500{\times}500 um^2$($50{\times}40um^2$ except pad interconnection part).

• Journal of Internet Computing and Services
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• v.21 no.2
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• pp.19-26
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• 2020

This paper analyses the feasibility of using implantable antennas to detect and monitor tumors. We analyze this setting according to the wireless propagation loss and signal fading produced by human bodies and their environment in an indoor scenario. The study is based on the ITU-R propagation recommendations and prediction models for the planning of indoor radio communication systems and radio local area networks in the frequency range of 300 MHz to 100 GHz. We conduct primary estimations on 915 MHz and 2.4 GHz operating frequencies. The path loss presented in most short-range wireless implant devices does not take into account the human body as a channel itself, which causes additional losses to wireless designs. In this paper, we examine the propagation through the human body, including losses taken from bones, muscles, fat, and clothes, which results in a more accurate characterization and estimation of the channel. The results obtained from our simulation indicates a variation of the return loss of the spiral antenna when a tumor is located near the implant. This knowledge can be applied in medical detection, and monitoring of early tumors, by analyzing the electromagnetic field behavior of the implant. The tumor was modeled under CST Microwave Studio, using Wisconsin Diagnosis Breast Cancer Dataset. Features like the radius, texture, perimeter, area, and smoothness of the tumor are included along with their label data to determine whether the external shape has malignant or benign physiognomies. An explanation of the feasibility of the system deployment and technical recommendations to avoid interference is also described.

• Journal of the Korean Chemical Society
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• v.45 no.4
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• pp.351-356
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• 2001

Planarization of the free-standing diamond film surface as smooth as possible could be obtained by using the hydrogen plasma etching with the diffusion of the carbon species into the metal alloy (Fe, Cr, Ni). For this process, we placed the free-standing diamond film between the metal alloy and the Mo substrate like a metal-diamond-molybdenum (MDM) sandwich. We set the sandwich-type MDM in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. The sandwich-type MDM was heated over ca. 1000 $^{\circ}C$ by using the hydrogen plasma. We call this process as the hydrogen plasma etching with carbon diffusion process. After etching the free-standing diamond film surface, we investigated surface roughness, morphologies, and the incorporated impurities on the etched diamond film surface. Finally, we suggest that the hydrogen plasma etching with carbon diffusion process is an adequate etching technique for the fabrication of the diamond film surface applicable to electronic devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.5
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• pp.787-794
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• 2001

In this paper, the development of large-signal model extractor for GaAs FET device through the Monolithic Microwave integrated Circuit(MMIC) is presented. The measurement program controlled by personal computer is developed for the processing of an amount of measured data, and the de-embedding algorithm is added to the program for voltage dropping as attached series resistance on measurement system. The small-signal model parameters are typically consisted of 7 elements that are considered as complexity of large-signal model and its the accuracy of the small-signal model is verified through comparing with measured data as varied bias point. The fitting function model, one of the empirical model, is used for quick simulation. In the process of large-signal model parameter extraction, one-dimensional optimization method is proposed and optimized parameters are extracted. This study can reduce the modeling and measuring time and can secure a suitable model for circuit.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.247.1-247.1
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• 2014

The capacitive coupled plasma is used widely in the semiconductor industries. Especially, the uniformity of the industrial plasma is heavily related with defect ratio of devices. Therefore, the industries need the capacitive coupled plasma source which can generate the uniform plasma and control the plasma's uniformity. To achieving the uniformity of the large area plasma, we designed multi-powered electrodes. We controlled the uniformity by controlling the power of each electrode. After this work, we started to research another concept of the plasma device. We make the plasma chamber that has multi-ground electrodes imaginary (CST microwave studio) and simulate the electric field. The shape of the multi-ground electrodes is ring type, and it is same as the shape of the multi-power electrodes that we researched before. The diameter of the side electrode's edge is 300mm. We assumed that the plasma uniformity is related with the impedance of ground electrodes. Therefore we simulated the imaginary chamber in three cases. First, we connected L (inductor) and C (capacitor) at the center of multi-ground electrodes. Second, we changed electric conductivity of multi-ground electrode. Third, we changed the insulator's thickness between the center ground electrode and the side ground electrode. The driving frequency is 2, 13.56 and 100 MHz. We switched our multi-powered electrode system to multi-ground electrode system. After switching, we measured the plasma uniformity after installing a variable vacuum capacitor at the ground line. We investigate the effect of ground electrodes' impedance to plasma uniformity.