• Proceedings of the KSR Conference
• /
• 2006.11b
• /
• pp.771-778
• /
• 2006

Before the Flap type GATE is introduced until, the Turnstile type GATE was plentifully used. The Turnstile type GATE is used plentifully from the Seoul metro, Busan Transportation Corporation and Korea Railroad Corporation. From the Turnstile type GATE, the micro switch breakdown is occurred by the contact of the micro switch which perceives a Turnstile rotation and the cam. The breakdown is cause of the passenger inconveniently. In order to prevent the breakdown which is caused by Micro switch contact, Microswitch support used the sensor in Turnstile rotation perception. The sensor which is used in test is Photo Sensor and Reed Sensor two type. The test result Reed Sensor was suitable in underground environment. When using the RF card, RF card processing came to be quick

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.20 no.2
• /
• pp.481-487
• /
• 1996

A snapping-beam microswitch has been designed, fabricated and tested. From a design analysis, necessary and sufficient conditions for a snap-through switching fouction have been derived for a clamped shallow beam. The necessary condition has resulted in a geometric relation, in which the ratio of beam thickness to initial beam deflection plays a key role in the snapping ability. The sufficient condition for the snapping action has been obtained as a function of the inertia force due to applied acceleration, and the electrostatic force, adjustable by an inter-electrode voltage. For experimental investigations, a set of microbeams of silicon dioxide/$P^+$silicon bimorphs have been fabricated. Geometric size and mechanical behavior of each material film have been measured from on-chip test structures. Estimated and measured characteristics of the fabricated devices are compared.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.12
• /
• pp.639-647
• /
• 2001

We present an integrated optical microswitch, composed of silicon waveguides, gold-coaled silicon micromirrors, and electrostatic contact actuators, for applications to the optical signal transceivers. For a low switching voltage, we modify the conventional curled electrode microactuator into a electrostatic microactuator with touch-down beams. We fabricate the silicon waveguides and the electrostatically actuated micromirrors using the ICP etching process of SOI wafers. We observe the single mode wave propagation through the silicon waveguide with the measured micromirror loss of $4.18\pm0.25dB$. We analyze major source of the micromirror loss, thereby presenting guidelines for low-loss micromirror designs. From the fabricated microswitch, we measure the switching voltage of 31.74V at the resonant frequency of 6.89kHz. Compared to the conventional microactuator, the present contact microactuator achieves 77.4% reduction of the switching voltage. We also discuss a feasible method to reduce the switching voltage to 10V level by using the electrode insulation layers having the residual stress less than 30MPa.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.4
• /
• pp.183-188
• /
• 2016

This paper presents the design and characterization of wide band ohmic microswitch with an actuation voltage as low as 20~25 V, and a restoring force of 14.1 μN. The design of the proposed switch is primarily composed of an electrostatic actuator, bridge membrane, cantilever (beam) and coplanar waveguide, suspended over the substrate. The analysis shows an insertion loss of −0.002 dB at 1GHz and remains as low as −0.35 dB, even at 100 GHz. The isolation loss of the switch is sustained at −21.09 dB at 100GHz, with a peak value of −99.58 dB at 1 GHz and up-state capacitance of 4 fF. To our knowledge, this is the first demonstration of a series contact switch, which works over a wide bandwidth (DC-100 GHz) and with such a high and sustained isolation, even at high frequencies and with an excellent figure of merit (f_c=1/2.pi.Ron.Cu= 39.7 THz).

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.2
• /
• pp.92-97
• /
• 2016

This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.