• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.4 s.95
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• pp.366-372
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• 2005

This paper presents analysis of a slot array antenna having a low side lobe level and high front-to-back ratio for a repeater system of a satellite DMB(Digital Multimedia Broadcasting) service. Antennas for this repeater system require a high gain and enough isolation to reduce interferences between signals in system. Therefore, it is necessary to suppress a side lobe level and to increase front-to-back ratio. Unlike a structure 134 by lossy microstrip lines, in this work a single cavity-backed slot antenna array using a single waveguide feed is proposed to obtain the reliability for high power handling and high radiation efficiency. The side lobe level and front-to-back ratio are enhanced with tapered array technique and an optimized vertical reflector. The measured side lobe levels in H- and E-plane are under $-33.24\;\cal{dB}$ and $-35.78\;\cal{dB}$, respectively. The front-to-back ratio over $37.84\;\cal{dB}$, and the peak gain of over $17\;\cal{dBi}$ are measured.

• Journal of Navigation and Port Research
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• v.26 no.3
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• pp.289-294
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• 2002

The broadband high power 3-way combiner was designed and fabricated for the digital TV repeater. To achieve increase of the bandwidth and the high power capability, Wilkinson type power divider was adopted in our research. First of all, Wilkinson type power divider of equal-split and unequal-split were combined, and the characteristics of the four port in-phase power combiner was simulated for each thickness of dielectric substrates. As the results of simulation, the power combiner fabricated by using dielectric substrate of 120 mil-thickness has the characteristics as follows: insertion loss of less than -651 dB, reflection coefficient of less than -13 dB, isolation among the output ports of less than -15 dB, and pose difference among the output ports of smiler than 13$^{\circ}$. Therefore, this power combiner was possible to improve the limit of microstrip line width due to high impedance, the problem of power loss due to interaction between strip lines in a high power combiner and narrow bandwidth simultaneously. Furthermore, making broadband and high power could be achieved since the fabricated 3-way combiner has good characteristics of insertion loss, the reflection coefficient, separation between ports, and phase difference.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.862-877
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• 2008

In this paper, two types of wideband 3-dB ring hybrids are compared and discussed to show the ring hybrid with a set of coupled-line sections better. However, the better one still has a realization problem that perfect matching can be achieved only with -3 dB coupling power. To solve the problem, a set of coupled-line sections with two shorts is synthesized using one- and two-port equivalent circuits and design equations are derived to have perfect matching, regardless of the coupling power. Based on the design equations, a modified ${\Pi}-type$ of transmission-line equivalent circuit is newly suggested. It consists of coupled-line sections with two shorts and two open stubs and can be used to reduce a transmission-line section, especially when its electrical length is greater than ${\pi}$. Therefore, the $3\;{\lambda}/4$ transmission-line section of a conventional ring hybrid can be reduced to less than ${\pi}/2$. To verify the modified ${\Pi}-type$ of transmission- line equivalent circuit, two kinds of simulations are carried out; one is fixing the electrical length of the coupled-line sections and the other fixing its coupling coefficient. The simulation results show that the bandwidths of resulting small transmission lines are strongly dependent on the coupling power. Using modified and conventional ${\Pi}-types$ of transmission-line equivalent circuits, a small ring hybrid is built and named a compact wideband coupled-line ring hybrid, due to the fact that a set of coupled-line sections is included. One of compact ring hybrids is compared with a conventional ring hybrid and the compared results demonstrate that the bandwidth of a proposed compact ring hybrid is much wider, in spite of being more than three times smaller in size. To test the compact ring hybrids, a microstrip compact ring hybrid, whose total transmission-line length is $220^{\circ}$, is fabricated and measured. The measured power divisions($S_{21}$, $S_{41}$, $S_{23}$ and $S_{43}$) are -2.78 dB, -3.34 dB, -2.8 dB and -3.2 dB, respectively at a design center frequency of 2 GHz, matching and isolation less than -20 dB in more than 20 % fractional bandwidth.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.6-13
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• 2009

For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.