• Journal of Power System Engineering
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• v.5 no.2
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• pp.36-42
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• 2001

This paper deals with finite element analyses of residual stresses causing popping up which are induced in micromachining processes of a microaccelerometer sensors. The paddle of the micro accelerometer sensor is designed symmetric with respect to the direction of the beam. After heating the tunnel gap up to 100 degree and get it through the cooling process and the additional beam up to 80 degree and get it through the cooling process. We learn the thermal internal stresses of each shape and compare the results with each other, after heating the tunnel gap up to 400 degree during the Pt deposition process. Finally we find the optimal shape which is able to minimize the internal stresses of microaccelerometer sensor. We want to seek after the real cause of this pop up phenomenon and diminish this by change manufacturing processes of microaccelerometer sensor by electrostatic force.

• Journal of Advanced Marine Engineering and Technology
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• v.25 no.3
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• pp.631-635
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• 2001

The major problems associated with the manufacturing processes of the microaccelerometer based on the tunneling current concept is the residual stress. This paper deals with finite element analysis of residual stress causing pop up phenomenon which are induced in micromachining processes for a microaccelerometers sensor using silicon on insulator(SOI) wafer. After heating the tunnel gap up to $100^{\circ}C$and get it through cooling process and the additional beam up to $80^{\circ}C$get it through the cooling process. We learn the residual stress of each shape and compare the results with each other, after heating the tunnel gap up to $400^{\circ}Cduring$ the Pt deposition process. The equivalent stresses produced during the heating process of focused ion beam(FIB) cut was also to be about $0.02~0.25Pa/^{\circ}C$and cooling process the gradient of residual stresses of about $8.4\{times}10^2Pa/{\mu}m$ still at cantilever beam and connected part of paddle. We want to seek after the real cause of this pop up phenomenon and diminish this by change manufacturing processes of microaccelerometer sensors.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.11 no.4
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• pp.12-18
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• 2002

Silicon on insulator(SOI) wafer is used in a variety of microsensor applications in which thermal deformations and other mechanical effects may dominate device Performance. One of major Problems associated with the manufacturing Processes of the microaccelerometer based on the tunneling current concept is thermal deformations and thermal stresses. This paper deals with finite element analysis(FEA) of residual thermal deformations causing popping up, which are induced in micrormaching processes of a microaccelerometer. The reason for this Popping up phenomenon in manufacturing processes of microaccelerometer may be the bending of the whole wafer or it may come from the way the underetching occurs. We want to seek after the real cause of this popping up phenomenon and diminish this by changing manufacturing processes of mic개accelerometer. In microaccelerometer manufacturing process, this paper intend to find thermal deformation change of the temperature distribution by tunnel gap and additional beams. The thermal behaviors analysis intend to use ANSYS V5.5.3.

• Journal of Power System Engineering
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• v.5 no.1
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• pp.73-79
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• 2001

정전기력을 이용하는 마이크로가속도계 센서는 단결성 실리콘 SOI(Silicon On Insulator) 웨이퍼의 기판에 절전재료 적층과 등방성 및 이방성 부식공정으로 제작한다. 마이크로가속도 센서 개발에는 3차원 미소구조체의 제작공정에서 가열 및 냉각공정의 온도구배로 야기되는 포핑업과 같은 열변형 해석이 최적 형상설계에 중요한 요건이다. 본 연구에서는 양자역학적 현상인 턴널링전류 원리로 승용차 에어백의 검침부 역할을 하는 마이크로가속도 센서의 제조공정에서 소착현상을 방지하는 부가 비임과 턴널갭의 FIB 절단가공과 백금 적층공정의 열적 거동을 해석한다. 마이크로머시닝 공정에서 온도의존성을 고려하여 연성해석하고 유한요소법의 상용코드인 MARC K6.1로 분석한 결과를 단결정 실리콘 웨이퍼로 가공하는 마이크로가속도 센서의 최적공정 및 형상설계를 위한 기초자료로 활용될 수 있을 것으로 기대된다.

• Journal of the Korea Institute of Military Science and Technology
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• v.14 no.1
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• pp.132-138
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• 2011

A micromachined silicon accelerometer capable of surviving and detecting very high accelerations(up to 200,000 times the gravitational acceleration) is necessary for a high impact accelerometer for earth-penetration weapons applications. We adopted as a reference model a piezoresistive type silicon micromachined high-shock accelerometer with a bonded hinge structure and performed structural analyses such as stress, modal, and transient dynamic responses and sensor sensitivity simulation for the selected device using piezoresistive-structural coupled-field analysis. In addition, structural optimization was introduced to improve the performances of the accelerometer against the initial design of the reference model. The design objective here was to maximize the sensor sensitivity subject to a set of design constraints on the impact endurance of the structure, dynamic characteristics, the fundamental frequency and the transverse sensitivities by changing the dimensions of the width, sensing beams, and hinges which have significant effects on the performances. Through the optimization, we could increase the sensor sensitivity by more than 70% from the initial value of $0.267{\mu}V/G$ satisfying all the imposed design constraints. The suggested simulation and optimization have been proved very successful to design high impact microaccelerometers and therefore can be easily applied to develop and improve other piezoresistive type sensors and actuators.