• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.104-108
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• 2003

COF(Coefficient Of Friction), AE(Acoustic Emission), micro-cracks and crystal structure of the single crystalline silicon were investigated according to the induced normal load during scratching test. Scratching tests were performed with the loading rate of 100 N/min and various scratching speeds of 1, 3, 6, 10 mm/min from 0 up to 30 N of the maximum normal load. In consequence, COF, AE and crack density were observed to increase with increasing normal load or increasing scratching speed. Phase transformations from the silicon diamond structure to other structures were observed in the scratched grooves for the slow scratching speeds using micro-Raman spectroscopy.

• Carbon letters
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• v.13 no.1
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• pp.34-38
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• 2012

Successful application of graphene requires development of various tools for its chemical modification. In this paper, we present a Raman spectroscopic investigation of the effects of UV light on single layer graphene with and without the presence of $O_2$ molecules. The UV emission from a low pressure Hg lamp photolyzes $O_2$ molecules into O atoms, which are known to form epoxy on the basal plane of graphene. The resulting surface epoxy groups were identified by the disorder-related Raman D band. It was also found that adhesive residues present in the graphene samples prepared by micro-mechanical exfoliation using adhesive tape severely interfere with the O atom reaction with graphene. The UV-induced reaction was also successfully applied to chemical vapor deposition-grown graphene. Since the current method can be readily carried out in ambient air only with UV light, it will be useful in modifying the surfaces of graphene and related materials.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.3
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• pp.170-176
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• 2000

A novel method for improving the adhesion of diamond films on cemented carbide tool inserts has been investigated. This method is based on the formation of a compositionally graded interface by developing a microrough surface structure using a pulsed laser process. Residual stresses of diamond films deposited on laser modified cemented carbides were measured as a function of substrate roughness using micro-Raman spectroscopy. The surface morphology and roughness of diamond films and cemented carbides were also investigated at different laser modification conditions. It was found that the increasing interface roughness reduced the average residual stress of diamond films, resulting in improved adhesion of diamond films on cemented carbides.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.430-430
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• 2011

Graphene, one single atomic layer of graphite, has attracted extensive attention in various research fields since its first isolation from graphite. Application in the future electronics requires better understanding and manipulation of electronic properties of graphene supported on various solid substrates. Here, we present a study on charge doping and morphology of graphene prepared on atomically flat and highly polar mica substrates. Ultra-flat single-layer graphene was prepared by micro-exfoliation of graphite followed by deposition on cleaved mica substrates. Atomic force microscopy (AFM) revealed presence of ultra-thin water films formed in a layer-by-layer manner between graphene and mica substrates. Raman spectroscopy showed that a few angstrom-thick water films efficiently block electron transfer from graphene to mica. Hole doping in graphene caused by underlying mica substrates was also visualized by scanning Kelvin probe microscopy (SKPM).

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.470-475
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• 1996

Fiber-textured diamond films have been deposited on scratched silicon(100) substrate by micro wave .plasma enhanced chemical vapor deposition at the condition of micro wave power : 950 W, pressure : 60 torr, H$_{2}$ gas flow rate : 50 sccm, CH$_{4}$ gas flow rate : 1.5 sccm, substrate temperature : about 900.deg. C and deposition time : 20 hours. The films were characterized by mean of scanning electron microscopy, Raman spectroscopy and X-ray analysis.

• Bulletin of the Korean Chemical Society
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• v.11 no.5
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• pp.460-463
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• 1990

The normal and fluorinated high-Tc superconducting materials, $YBa_2Cu_3O_{7-x}F_y$with $0.25{\leq}x{\leq}0.55\;and\;0.00{\leq}y{\leq}0.30$, were synthesized to investigate the dopping effect of fluorine atom on the superconductivity of Y123 and studied by X-ray diffraction analysis and electron probe microanalysis, resistivity and thermopower measurements, and polarized micro-Raman spectroscopy. The reproducible micro-Raman spectra were recorded and analyzed. The coherent assignments could be suggested for the spectra of normal and fluorinated samples. The fluorine atoms introduced were found to be substituted for oxygen in pyramidal Cu-O units rather than in Cu-O chains. The unit cell parameters were decreased upon the substitution of oxygen by fluorine atom. From the decreasing cell parameters and Tc, the increasing thermopower, and the possible assignments of the vibrational modes, it could be suggested that the dopping of fluorine atom localizes the superconducting electrons in Y123.

• Journal of the Korean institute of surface engineering
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• v.43 no.1
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• pp.7-11
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• 2010

Solid phase crystallization (SPC) is a simple method in producing a polycrystalline phase by annealing amorphous silicon (a-Si) in a furnace environment. Main motivation of the crystallization technique is to fabricate low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) on a thermally susceptible glass substrate. Studies on SPC have been naturally focused to the low temperature regime. Recently, fabrication of polycrystalline silicon (poly-Si) TFT circuits from a high temperature polycrystalline silicon process on steel foil substrates was reported. Solid phase crystallization of a-Si films proceeds by nucleation and growth. After nucleation polycrystalline phase is propagated via twin mediated growth mechanism. Elliptically shaped grains, therefore, contain intra-granular defects such as micro-twins. Both the intra-granular and the inter-granular defects reflect the crystallinity of SPC poly-Si. Crystallinity and SPC kinetics of high temperatures were compared to those of low temperatures using Raman analysis newly proposed in this study.

• Journal of the Korean institute of surface engineering
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• v.42 no.4
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• pp.173-178
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• 2009

DLC film was synthesized on plastic injection mold(SKD11, $30\;mm\;{\times}\;19\;mm\;{\times}\;0.5\;mm$) and Si(100) wafer for 2 h at $130^{\circ}C$ under 6 mTorr using hybrid method of rf sputtering and ion source. The obtained film was analysed by Raman spectroscopy, AFM, TEM, Nano indenter and scratch tester, etc. The film was defined as an amorphous phase. In the Raman spectrum, broad peak of $sp^2$-bonded carbon attributed to graphite at $1550\;cm^{-1}$ were observed, and the ratio of ID($sp^3$ diamond intensity)/IG($sp^2$ graphite intensity) was approximately 0.54. The adhesion of DLC film was more than 80 N with scratch tester when $0.2\;{\mu}m$ thickness Cr was coated as interlayer. The micro-hardness was distributed at 35~37 GPa. The friction coefficient was 0.02~0.07, and surface roughness(Ra) was 0.34~1.64 nm. The lifetime of DLC coated plastic injection mold using as a connector part in computer was more than 2 times of non-coated mold.

• Progress in Superconductivity
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• v.6 no.2
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• pp.95-98
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• 2005

We present results of Raman spectroscopic studies of superconducting $YBa_2Cu_3O_7$ (YBCO) coated conductors. Raman scattering is used to characterize optical phonon modes, oxygen content, c-axis misalignment, and second phases of the YBCO coated conductors at a micro scale. A two-dimensional mapping of Raman spectra with transport properties has been performed to elucidate the effect of local propertied on current path and superconducting phase. The information taken from the local measurement will be useful for optimizing the process condition.

• Proceedings of the Korea Society for Industrial Systems Conference
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• 2001.05a
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• pp.224-231
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• 2001

Hydrogenated amorphous carbon films were deposited by ERC-PECVD with deposition conditions, such as ECR power, gas composition of methane and hydrogen, deposition time, and substrate bias voltage. The characteristics of the film were analyzed using the AES, ERDA, FTIR. Raman spectroscopy and micro hardness tester. From the results of AES and ERDA, the elements in the deposited film were confirmed as carbon and hydrogen atoms. FTIR spectroscopy analysis shows that the atomic bonding structure of a-C:H film consisted of sp³and sp²bonding, most of which is composed of sp³bonding. The structure of the a-C:H films changed from CH₃bonding to CH₂or CH bonding as deposition time increased. We also found that the amount of dehydrogenation in a-C:H films was increased as the bias voltage increased. Raman scattering analysis shows that integrated intensity ratio (I/sub D//I/sub G/) of the D and G peak was increased as the substrate bias voltage increased, and films hardness was increased.