• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.121-121
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• 1999

Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.79-82
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• 2009

This work presents a novel lighting technology based on a YAG:$Ce^{3+}$ phosphor converter with micro line lenticular structure, to accompany an array of bare LED chips on a board. This technology is especially effective in TFT-LCD backlight applications as it offers the advantages of high light radiation efficiency, low color deviation, uniform luminance distribution and compact backlight thickness. Additionally, the proposed configuration is low-cost, can be manufactured quickly, and can be mass-produced economically.

• Journal of Convergence for Information Technology
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• v.10 no.2
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• pp.96-101
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• 2020

In micro-sized light emitting diodes, which are increasingly attentions as the light sources of displays and semiconductor lighting, increasing the amount of light and improving the luminous efficiency are very important and various development directions and methods have been proposed. In this study, the design of 3-dimensional nano structures through nano frame formation and the application of a nano pattern and a reactive etching method were proposed. And it will also be discussed that nano pillar arrays with nano cavities having improved verticality can be applied to semiconductor light sources through the development of nano frame structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.563-569
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• 2023

Micro light-emitting diodes (LEDs), with a chip size of 100 micrometers or less, have attracted significant attention in flexible displays, augmented reality/virtual reality (AR/VR), and bio-medical applications as next-generation light sources due to their outstanding electrical, optical, and mechanical performance. In the realm of bio-medical devices, it is crucial to transfer tiny micro LED chips onto desired flexible substrates with low precision errors, high speed, and high yield for practical applications on various parts of the human body, including someone's face and organs. This paper aims to introduce a fabrication process for flexible micro LED devices and propose micro LED transfer techniques for cosmetic and medical applications. Flexible micro LED technology holds promise for treating skin disorders, cancers, and neurological diseases.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.13-17
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• 2013

In lighting system where several large-area organic light-emitting diode (OLED) lighting panels are involved, panel aging may appear differently from each other, resulting in a falling-off in lighting quality. To achieve uniform light output across large-area OLED lighting panels, we have employed an optical feedback circuit. Light output from each OLED panel is monitored by the optical feedback circuit that consists of a photodiode, I-V converter, 10-bit analogdigital converter (ADC), and comparator. A photodiode generates current by detecting OLED light from one side of the glass substrate (i.e., edge emission). Namely, the target luminance from the emission area (bottom emission) of OLED panels is monitored by current generated from the photodiode mounted on a glass edge. To this end, we need to establish a mapping table between the ADC value and the luminance of bottom emission. The reference ADC value corresponds to the target luminance of OLED panels. If the ADC value is lower or higher than the reference one (i.e., when the luminance of OLED panel is lower or higher than its target luminance), a micro controller unit (MCU) adjusts the pulse width modulation (PWM) used for the control of the power supplied to OLED panels in such a way that the ADC value obtained from optical feedback is the same as the reference one. As such, the target luminance of each individual OLED panel is unchanged. With the optical feedback circuit included in the lighting system, we have observed only 2% difference in relative intensity of neighboring OLED panels.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.49-52
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• 2009

We have investigated the effect of the surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of ITO thin films, we have processed photolithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the ITO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the ITO thin films. Device structure was ITO/$\alpha$-NPD/DPVB/Alq3/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer (minolta CS-1000A). The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.25-29
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• 2010

We have investigated the effect of surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of AZO thin films, we have processed photo-lithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the AZO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the AZO thin films. Device structure was AZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer. The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• Korean Journal of Optics and Photonics
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• v.21 no.2
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• pp.61-68
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• 2010

Optical simulation methods were applied to the edge-lit LED backlight for LCD TV applications in order to optimize the optical structure of the light guide plate(LGP), and thus to improve the uniformity properties by removing the bright spots caused by LED's. The edge-lit LED backlight consisted of three white LED's with a lamp cover, a light guide plate, and a reflection film. When there was no pattern on the entrance side surface of the LGP, the illuminance uniformity was sensitively dependent on the distance d between the LED and the entrance surface. The illuminance uniformity increased with d but its increasing rate slowed down when d was beyond ~ 1.5 mm. When micro-patterns such as a lenticular lens array (LLA) or a serration pattern were formed on the entrance surface, the illuminance uniformity was improved substantially even for the case of very small d. At the same simulation condition, the lightguide with serration pattern showed a better uniformity than that with LLA pattern. Additional improvement could be achieved by changing the refractive index of the micro-patterns. These results suggest that using micro-patterns is a very effective way to reduce the bright spots due to their refracting function for the concentrated incident rays onto the LGP.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.24-24
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• 2003

Research activity in the III-V nitrides materials system has increased markedly in the past several years ever since high-brightness blue light-emitting diodes (LEDs) became commercially available. Despite of excellent optical properties of the GaN, however, inherently poor thermal property of the sapphire used as a substrate material n these devices may lead to thermal degradation of devices, especially during their high power operation. Therefore, dependable thermal analysis and packaging schemes of GaN-based LEDs are necessary for solid lighting applications under high power operation. In this paper, emphasis will be placed upon thermal design of GaN-based LEDs. Thermal measurements of LEDs on chip and packaging scale were performed using the liquid crystal thermographic technology and micro thermocouples for different bias conditions. By a series of optical arrangement, hot spots with specific transition temperatures were obtained with increasing input power. Thermal design of LEDS was made using the finite element method and analytical unit temperature profile approach with optimal boundary conditions. The experimental results were compared to the simulated data and the results agree well enough for the establishment of dependable prediction of thermal behavior in these devices. The paper will present a more detailed understanding of the thermal analysis of the GaN-based blue and white LEDs for high power applications.

• Journal of Broadcast Engineering
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• v.20 no.6
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• pp.928-937
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• 2015

A portable head up display (HUD) using the optical combiner lens with a 0.47inch LCD panel for a portable multi-windows virtual display is proposed. The proposed system consists of several micro panels, optical devices, and RGB 3in1 light-emitting diodes (LED) for making the full color display, and video and audio format for the high definition multimedia interface (HDMI) for the connecting between HUD and mobile phone. The multi-windows HUD is designed as an alternative to conventional built-in type HUD targeting the mass volume aftermarket at an affordable price.