• Electrical & Electronic Materials
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• 제8권1호
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• pp.6-12
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• 1995

High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

• Proceedings of the Korean Ceranic Society Conference
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.35-35
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.202-203
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• 2005

To recognize whether admixture affects some $(Ba_{0.6}Sr_{0.4})TiO_3$, powder in this research $Li_2CO_3$, MgO, $MnO_2$ adding each 3 wt % by Tape casting method thick film make. Sitering temperature lowered 1300$^{\circ}C$ adding $Li_2CO_3$, and density is 5.942g/$cm^3$, and specific inductive capacity increases about decuple and displayed 4000. Climbed sitering temperature 1400$^{\circ}C$ adding MgO, specific inductive capacity reduced 1/2 times. Lowered sintering temperature 1325$^{\circ}C$ low adding $MnO_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.157-160
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• 2004

Ferroelectric $(Ba_xSr_{1-x})TiO_3$ (BST) thin films have been deposited on (001) MgO single crystals by a pulsed laser deposition (PLD) method. The structure of deposited BST thin films were investigated by an x-ray diffractometer. Calculated c-axis lattice parameters of the BST films exhibit a strong lattice distortion, which was not observed in ceramic BST at room temperature. This lattice distortion of BST has been attributed to strains caused by lattice constant difference between film and substrate, oxygen vacancies in BST film, and thermal expansion difference between film and substrate. Ferroelectric properties at 10 GHz have been measured using a HP 8510C vector network analyzer. Dielectric properties, capacitance tunability and quality factor, of the interdigitaed capacitors fabricated on BST films were calculated from the measured s-parameters. Two distinct behaviors in structural, opitical, and microwave properties of BST films were observed; below and above 200 mTorr of oxygen pressure in the deposition chmber.

• Journal of the Korean Ceramic Society
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• 제33권2호
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• pp.177-182
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• 1996

strontium titanate (SrTiO3) thin films deposited on Pt/MgO were prepared by Plasma Enhanced Metal Orgainc Chemical vapor Deposition (Pe-MOCVD). The crystallinity of SrTiO3 thin films increased with increasing depo-sition temperature and SrF2 second phase disappeared at 55$0^{\circ}C$ The films showed a dielectric constant of 177 and a dissipation factor of 0.0195 at 100 kHz. The variation of capacitance of the films with applied voltage was small showing paraelectric properties. The charge storage density and leakage current density were 40fC/${\mu}{\textrm}{m}$2 and 3.49$\times$10-7 A/cm2 at 0.25 MV/cm, respectively.

• Environmental Engineering Research
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• 제13권1호
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• pp.28-32
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• 2008

The photocatalytic treatment of water contaminated with 2,4,6-trinitrotoluene (TNT) was explored in bench-scale experiments in batch mode using a Pyrex tube coated with a thin film of $TiO_2$ located inside a photoreactor. The reactor was aerated by purging it with compressed air before initiating the photocatalytic reaction. The rate of TNT degradation approximated first-order kinetics. The reaction rate constant decreased as the TNT concentration increased from 25 to 100 mg/L, while the first-order kinetics could be modeled using a Langmuir adsorption isotherm. The addition of the organic reductants methanol and EDTA significantly enhanced the rate of TNT degradation, with optimum results in the presence of 20% methanol by volume. EDTA increased the rate of TNT removal by enhancing the role of the reductants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.546-547
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• 2002

Ni thin film on the PMN-PT crystal wafer were deposited by using E-beam evaporator technique. Deposited film was patterned by UV-lithography and etching and was in-diffused at 300~600C. Diffusion profile of Ni ions in PMN-PT was measured by secondary ion mass spectroscopy (SIMS).

• Journal of Sensor Science and Technology
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• 제7권2호
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• pp.103-110
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• 1998

Pyroelectric infrared detectors based on La-modified $PbTiO_{3}$ (PLT) thin films have been fabricated by RF magnetron sputtering and rnicrornachining technology. The detectors form $Pb_{l-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.05) thin film ferroelectric capacitors epitaxially grown by RF magnetron sputtering on Pt/MgO (100) substrate. The sputtered PLT thin film exhibits highly c-axis oriented crystal structure that no poling treatment for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency. Polymide is coated on top of the sensing elements to support the fragile structure and the backside of the MgO substrate is selectively etched to reduce the heat loss. The sensing element exhibited a very high detectivity D* of $8.5{\times}10^{8}cm{\cdot}\sqrt{Hz}/W$ at room temperature and it is about 100 times higher than the case of micromachining technology is not used. A sensing system that detects the position as well as the existence of a human body is realized using the array sensor.

• Advances in environmental research
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• 제1권4호
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• pp.289-304
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• 2012

Tris (2-methyl-1-aziridinyl) phosphine oxide (MAPO) is extremely poisonous and persistent in aqueous media. An efficient UV/nano$TiO_2$ process was employed for its mineralization in a high duty falling film photo-reactor based on an experimental design scheme that considers interactions between the main variables. The influencing variables and their range were determined with preliminary studies. The results show substrate mineralization to some extent under mild conditions of: T = $30^{\circ}C$, pH = 8.5, $[MAPO]_0=60\;mg\;L^{-1}$ and $[TiO_2]=110\;mg\;L^{-1}$. The relative importance of the influencing parameters were initial pH > temperature > $[MAPO]_0$ > [$TiO_2$]; while the interdependence of all the parameters was significant. Accordingly, a reduced quadratic expression was developed. Meanwhile, mineralization kinetic studies, based on chemical oxygen demand, revealed a power law model with order of 2.6 during process time until 150 min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.214-214
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• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.