• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• Korean Journal of Materials Research
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• v.4 no.3
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• pp.280-286
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• 1994

As-grown $YBa_2Cu_3O_{7-x}$ films on MgO(100)substrates were prepated by a reactive co-evaporation method, and effects of activated oxygen plasma on the crystallinity and superconductivity at substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$ were investigated. The film deposited under the activated oxygen plasma at the substrate temperature of $590^{\circ}C$ had a single crystal phase. Whereas, when films were deposited under only oxygen gas, they were not in perfect single crystal phase but with slight polycrystalline nature. When the substrate temperature was $590^{\circ}C$, $Tc_{zero}$'s were 83K and 80K for films with and without activated oxygen plasma, respectively. The critical temperature, the crystal structure and the surface morphology of as-grown films were found to be insensitive to the activated oxygen plasma which is introduced during deposition instead of oxygen gas, but the crystalline quality was improved somewhat by the introduction by the introduction of actvated oxygen plasma.

• Progress in Superconductivity and Cryogenics
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• v.9 no.1
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• pp.5-8
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• 2007

We have investigated the superconducting properties and surface morphology of $Sm_xBa_yCu_3O_{6+z}$ thin films deposited on LMO/IBAD-MgO/Hastelloy which prepared with different composition ratio by co-evaporation method(EDDC, Evaporation using Drum in Dual Chambers). We observed the composition ratio of SmBCO thin films by EDS analysis. We fabricated SmBCO thin film with critical current density of $1.5{\times}10^6A/cm^2$ at composition ratio of SM:Ba:Cu=1.10:2.01:3(at 77 K self-field). And, we confirmed that substitution of Sm-Ba did not occur at Cu rich phase by EDS analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.206-206
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• 2009

RF Magnetron Sputtering 방법을 통해 ZnS:Mn 박막 형광체를 증착한 다층 TFEL (Thin-Film Electroluminescent) Backlight 소자를 제작하였다. Alumina 기판 위에 Au 전극과 PMN 후막 유전체를 Screen printing 기법으로 층을 형성하였다. 그 위에 MgO 박막 유전체를 E-Beam 장비를 이용하여 증착 후, ZnS:Mn 박막 형광체를 50 W 의 저전력으로 약 8000 ${\AA}$ 두께로 증착하였다. 형광체는 Sputter 증착 시 Sulfur 부족 현상을 보상해주기 위해 ZnS:Mn (0.5%) Target 에 2 at % 의 Sulfur를 첨가하였으며, 상부 전극으로 사용할 ITO 는 DC Magnetron Sputter 를 이용하여 증착하였다. 어닐링 공정은 Air 분위기에서 급속 열처리 장치 (RTA, Rapid Thermal Annealing) 을 이용하여 600 $^{\circ}C$에서 20 분 진행하였다. 이러한 과정들을 통해 저전압 고휘도의 TFEL Backlight 소자를 제조할 수 있었다.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1226-1228
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• 1997

펄스 레이저 증착법을 이용하여 MgO 기판 위에 YBCO 박막을 c 축으로 성장시켰다. 이를 위하여 다양한 두께의 YBCO 박막을 여러 온도에서 증착시킴으로서 두께와 온도에 따른 YBCO 박막의 방향성을 조사하였다. 레이저원으로는 Nd:YAG 레이저의 355 nm의 파장을 이용하였으며, 증착시 기판온도는 $700^{\circ}C$와 $750^{\circ}C$에서 박막의 두께를 $3,000{\AA}$, $10,000{\AA}$, $20,000{\AA}$ 등으로 변화시켜 증착하였다. 이렇게 증착되어진 박막의 표면은 SEM으로 관촬되어졌으며, Raman Spectrascopy로 박막을 분석하였고, XRD를 사용하여 그 박막의 배향성을 연구하였다. 본 논문에서는 이와 같은 분석과 연구를 통하여 증착되어진 다성분 박막의 배향성이 기판온도와 박막두께에 따라 민감하게 변화함을 체계적으로 분석하였으며, 그 결과 기판온도와 박막 두께에 따른 YBCO 박막의 a 축, c 축 성장의 의존성을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.135-135
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• 2004

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.179-180
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• 2012

Aluminum alloys are widely known as non-ferrous metal with light weight and high strength. Consequently, these materials take center stage in the aircraft and automobile industry. The Al7075 aluminum alloy is based on the Al-Zn-Mg-Cu and one of the strongest wrought aluminum alloys. Aluminum nitride has ten times higher thermal conductivity($319W/m{\cdot}K$) than Al2O3 and also has outstanding electric insulation($1{\times}1014{\Omega}{\cdot}cm$). Furthermore, it has high mechanical property (430 MPa) even though its co-efficient of thermal expansion is less than alumina For these reasons, it has great possibilities to be used for not only the field which needs high strength lightweight but also electronic material field because of its suitability to be applied to the insulator film of PCB or wafer of ceramic with high heat conduction. This paper investigates the mechanical properties and corrosion behavior of aluminum alloy Al7075 deposited with aluminum nitride thin films To improve the surface properties of Al7075 with respect to hardness, and resistance to corrosion, aluminum nitride thin films have been deposited by pulsed DC reactive magnetron sputtering. The pulsed DC power provides arc-free deposition of insulating films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.67-67
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• 2001

The structure zone model has been used to provide an overview of the relationship between the microstructure of the films deposited by PVD and the most prominent deposition condition.s. B.AMovchan and AV.Demchishin have proposed it firstls such model. They concluded that the general features of the resulting structures could be correlated into three zones depending on $T/T_m$. Here T m is the melting point of the coating material and T is the substrate temperature in kelvines. Zone 1 ($T/Tm_) is dominated by tapered macrograins with domed tops, zone 2 ($O.3) by columnar grains with denser boundaries and zone 3 ($T/T_m>O.5$) by equiaxed grains formed by recrystallization. J.AThomton has extended this model to include the effect of the sputtering gas pressure and found a fourth zone termed zone T(transition zone) consisting of a dense array of poorly defined fibrous grains. R.Messier found that the zone I-T boundary (fourth zone of Thorton) varies in a fashion similar to the film bias potential as a function of gas pressure. However, there has not nearly enough model for explaining the change in morphology with crystal orientation of the films. The structure zone model only provide an information about the morphology of the deposited film. In general, the nucleation and growth mechanism for granular and fine structure of the deposited films are very complex in an PVD technique because the morphology and orientation depend not only on the substrate temperature but also on the energy of deposition of the atoms or ions, the kinetic mechanism between metal atoms and argon or nitrogen gas, and even on the presence of impurities. In order to clarify these relationship, AI and Mg thin films were prepared on SPCC steel substrates by PVD techniques. The influence of gas pressures and bias voltages on their crystal orientation and morphology of the prepared films were investigated by SEM and XRD, respectively. And the effect of crystal orientation and morphology of the prepared films on corrosion resistance was estimated by measuring polarization curves in 3% NaCI solution.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.3
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• pp.124-128
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• 2020

Recently, many studies on growth of single crystal diamond using MPECVD have been conducted. The heteroepitaxial method is one of the methods for growing diamonds on a large-area substrate, and research on synthesis of single crystal diamonds using SrTiO₃, MgO, and sapphire substrates has been attempted. In addition, research is being conducted to reduce the internal stress generated during diamond growth and to improve the crystallinity of the diamond. The compressive stress generated therein causes peeling and bowing from the substrate. This study aimed to synthesize heteroepitaxial single crystal diamonds with high crystallinity by surface modification. A diamond thin film was first grown on a sapphire/Ir substrate by MPECVD, and then etched with H₂ gas to modified the morphology and roughness of the surface. A secondary diamond layer was grown on the surface, and the internal stress, crystallinity of the diamond were investigated. As a result, the fabrication of single crystal diamonds with improved crystallinity was confirmed.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.193-196
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• 2000

A new type low-pass filter design method based on a coupled line and transmission line theory is proposed to suppress harmonics by attenuation poles in the stop band. The design formula are derived using the equivalent circuit of a coupled transmission line. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range and low insertion loss. The seventh-order low-pass filter designed by present method has a cutoff frequency of 0.9 CHz with a 0.01 dB ripple level. The coupled line type low-pass filter with strip line configuration was fabricated by using a high-temperature superconducting (HTS : YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on MgO(100) substrate. Since the HTS coupled tine type low-pass filter was proposed with five attenuation poles in stop band such as 1.8, 2.5, 4, 5.5, 6.2 GHz. The fabricated low-pass filter has improved the attenuation characteristics up to seven times of the cutoff frequency.