• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.130-133
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• 2006

In order to study the relationship between the discharge characteristics of an ac PDP and the surface conductivity of MgO thin film, the surface current across a ring shaped MgO film was measured by exposure to monochromatic vacuum ultraviolet from the synchrotron radiation source whose wavelength ranges from 60nm to 240nm $(5.5eV{\sim}25eV)$. The experimental results show that the surface current begins to increase rapidly at the photon energy of about 9 eV which might correspond to the valence band edge of MgO. The difference in the surface current level correlate well with the differences in the preparation method of MgO films and their respective discharge characteristics such as the firing, minimum sustain voltages, address voltage margin and address discharge delay time.

• 대한화학회지
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• 제61권2호
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• pp.57-64
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• 2017

Monoclinic $VO_2(M)$ nanoparticles codoped with 1.5 at. % W and 2.9 at. % Mg were synthesized by the hydrothermal treatment and post-thermal transformation method of $V_2O_5-H_2C_2O_4-H_2O$ with $Na_2WO_4$ and $Mg(NO_3)_2$. The composite thin film of the W/Mg-codoped $VO_2(M)$ with a commercial acrylic block copolymer was also prepared on PET substrate by wet-coating method. The reversible phase transition characteristics of the codoped $VO_2(M)$ nanoparticles and the composite film were investigated from DSC, resistivity and Vis-NIR transmittance measurements compared with the undoped and Wdoped $VO_2(M)$ samples. Mg-codoping into W-doped $VO_2(M)$ nanoparticles synergistically enhanced the transition characteristics by increasing the sharpness of transition while the transition temperature ($T_c$) lowered by W-doping was maintained. The codoped composite film showed the prominently enhanced NIR switching efficiency compared to only W-doped $VO_2(M)$ film with a lowered $T_c$.

• 한국세라믹학회지
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• 제40권4호
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• pp.354-359
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• 2003

The microwave dielectric characteristics of (1-x)(Al$\_$$\frac{1}{2}$/Ta$\_$$\frac{1}{2}$/)O$_2$-x(Mg$\_$1/3/Ta$\_$2/3/)O$_2$ (0$\leq$x$\leq$1.0) ceramics were investigated by crystalstructure, variations of ionic polarizability, and microstructures. As x increased, (1-x)(Al$\_$$\frac{1}{2}$/Ta$\_$$\frac{1}{2}$/)O$_2$-x(Mg$\_$1/3/Ta$\_$2/3/)O$_2$ transformed to tetragonal structure. Because the ionic radius of (Mg$\_$1/3/Ta$\_$2/3/)$\^$4+/was slightly bigger than one of (Al$\_$$\frac{1}{2}$/Ta$\_$$\frac{1}{2}$/)$\^$4+/, the cell parameters increased with increase of (Mg$\_$1/3/Ta$\_$2/3/)O$_2$concentration and coincided with prediction of the molecular additivity rule. As x increased, the compositions revealed ordered phase and were of single phase above 60 mol%. The increase of the ordered phase and grain size enhanced the Q and when ordering was completed at x over 0.6, the grain size was major factor for the increase in the a. Though the grain size increased, however, the porosity deteriorated the q. Therefore, the a depended on the order/disorder, the porosity, and the grain size in regular order.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.243-246
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• 2000

The sputtering systems mainly consist of the three-target holder. The target and substrate were the on-axis type. The MgO and STO substrate were used for the deposition of each layer. The optimum conditions of single-layer thin film were investigated from the SEM images and the XRD patterns. Based on the above conditions, the multi-layer thin films such as YBaCuO/LaGaO/Au/Nb and YBaCuO/Au/Nb were fabricated. The crystalline, the electrical Properties, the energy gap structure and the characteristics of the tunneling barrier on the multi-layer thin film have been investigated and characterized.

• 센서학회지
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• 제7권2호
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• pp.103-110
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• 1998

강유전체 박막과 마이크로 가공기술을 이용하여 초전형 적외선 센서를 제작하였다. 초전형 적외선 센서는 $Pb_{l-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.05) (PLT) 강유전체 박막 커패시터를 RF 마그네트론 스퍼터링 방식으로 백감 전극이 증착된 MgO 기판상에 결정 성장시킨 구조를 갖고 있다. 스퍼터링된 PLT 박막은 높은 c-축 결정 구조를 가지므로 센서로 사용하기 위한 분극 처리 과정이 필요 없다. 이는 적외선 이미지 센서를 구현함에 있어서 수율 향상에 필수적인 요소이다. 또한 마이크로 가공 기술을 사용하여 센서의 열용량을 극소화함으로서 센서의 효율을 최대화하였다. 제작된 센서의 상부에 폴리이미드를 코팅하고 MgO 기판을 선택적으로 식각하여 코팅된 폴리이미드와 MgO가 강유전체 박막 커패시터를 지지하고 있는 구조를 구현하였다. 이렇게 제작된 센서의 감도는 상온에서 $8.5{\times}10^{8}cm{\cdot}\sqrt{Hz}/W$로 측정되었으며 이는 마이크로 가공 기술을 사용하지 않은 경우보다 약 100 배의 감도 향상을 가져왔다. 2차원 배열 구조를 갖는 센서를 가지고 인체의 유 무 뿐만 아니라 위치까지 감별할 수 있는 센싱 시스템을 구현하였다.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.211-215
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• 2010

Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{\circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{\circ}C$. From AFM, it was known that the thin film grown at $400^{\circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{\circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{\circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.

• Environmental Engineering Research
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• 제13권1호
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• pp.28-32
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• 2008

The photocatalytic treatment of water contaminated with 2,4,6-trinitrotoluene (TNT) was explored in bench-scale experiments in batch mode using a Pyrex tube coated with a thin film of $TiO_2$ located inside a photoreactor. The reactor was aerated by purging it with compressed air before initiating the photocatalytic reaction. The rate of TNT degradation approximated first-order kinetics. The reaction rate constant decreased as the TNT concentration increased from 25 to 100 mg/L, while the first-order kinetics could be modeled using a Langmuir adsorption isotherm. The addition of the organic reductants methanol and EDTA significantly enhanced the rate of TNT degradation, with optimum results in the presence of 20% methanol by volume. EDTA increased the rate of TNT removal by enhancing the role of the reductants.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.102.1-102.1
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• 2000

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2005년도 추계학술발표회 및 workshop
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• pp.166-167
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• 2005