• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.69-70
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• 2008

태양전지에서 효율성은 높이고 가격은 낮추기 위한 연구가 활발히 진행이 되고 있다. 본 연구에서는 효율성 중에서도 single layer에서의 반사율에 초점을 맞추었다. 본 연구에서는 single layer 박막에서의 반사율에 대한 시뮬레이션을 수행했다. 적절한 refractive index를 갖는 박막을 사용했을 때, 반사율 감소를 simulation과 실험을 통해서 알 수가 있었으며, MgF2 박막물질을 사용했을 경우, 물질의 refractive index가 낮을수록 반사율이 낮아짐을 알 수 있었다. 시뮬레이션 결과와 실제 실험 결과를 비교했을 때, 실제 실험 결과의 반사율이 약 3%가량 큰 것으로 나타났다. 이는 반사방지막의 증착 불균일성에 기인하는 문제로 생각된다. 또한, refractive index의 차이에 의해 substrate에 따른 최적화 반사율을 얻는 조건이 달라짐을 실험을 통해 확인할 수 있었다. Glass의 경우는 MgF2가 silicon과 GaAs의 경우에는 ZrO2 나 HfO2가 낮은 반사율을 보였다.

• Preventive Nutrition and Food Science
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• v.20 no.3
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• pp.176-182
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• 2015

Abalone protein was hydrolyzed by enzymatic hydrolysis and the optimal enzyme/substrate (E/S) ratios were determined. Abalone protein hydrolysates (APH) produced by Protamex at E/S ratio of 1:100 showed angiotensin I converting enzyme inhibitory activity with $IC_{50}$ of 0.46 mg/mL, and APH obtained by Flavourzyme at E/S ratio of 1:100 possessed the oxygen radical absorbance capacity value of $457.6{\mu}M$ trolox equivalent/mg sample. Flavourzyme abalone protein hydrolysates (FAPH) also exhibited $H_2O_2$ scavenging activity with $IC_{50}$ of 0.48 mg/mL and $Fe^{2+}$+ chelating activity with $IC_{50}$ of 2.26 mg/mL as well as high reducing power. FAPH significantly (P<0.05) protected $H_2O_2$-induced hepatic cell damage in cultured hepatocytes, and the cell viability was restored to 90.27% in the presence of FAPH. FAPH exhibited 46.20% intracellular ROS scavenging activity and 57.89% lipid peroxidation inhibition activity in cultured hepatocytes. Overall, APH may be useful as an ingredient for functional foods.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.30 no.4
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• pp.350-356
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• 1994

We have prepared superconducting Bi-Pb-Sr-Ca.Cu-O thin films by RF magnetron sputtering technique, on heated MgO(100) substrates. Sputtering was carried out in a mixture of argon and oxygen(10%) and the pressure was maintained at 5 mTorr during deposition. The substrate temperature was maintained $400^{\circ}C$ during deposition. The films sputtered were amorphous and insulating. All the films became superconducting by annealing, The films annealed at $880^{\circ}C$ for 30 minutes in air showed high-Tc phase with zero resistivity of 93K. These results indicate that the growth of the high-Tc phase is promoted by the presence of Pb at annealing temperature.

• Journal of Magnetics
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• v.6 no.3
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• pp.83-85
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• 2001

The magnetoresistance properties of NiO/NiFe/Cu/NiFe spin valve film deposited on MgO(100) substrate with YBa$_2$$Cu_3O_7$(YBCO) film were investigated at room temperature and at 77 K. The magnetoresistance (MR) curves of the hybrid superconductor-magnetoresistor film structure showed an exchange coupling field of 300 Oe and an inverse magnetoresistance ratio of -6.5%. The magnetization configurations of the two magnetic layers in the NiO spin valve were antiparallel due to an increment in the conduction electron flow to superconductor YBCO film. This sample showed an inverse MR ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.318.2-318.2
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• 2016

FeM2X4 spinel structures, where M is a transition metal and X is oxygen or sulfur, are candidate materials for spin filters, one of the key devices in spintronics. Both the Fe and M ions can occupy tetrahedral and octahedral sites; therefore, these types of compounds can display various physical and chemical properties [1]. On the other hand, the electronic and magnetic properties of these spinel structures could be modified via the control of cation distribution [2, 3]. Among the spinel oxides, iron manganese oxide is one of promising materials for applications. FeMn2O4 shows inverse spinel structure above 390 K and ferrimagnetic properties below the temperature [4]. In this work, we report on the structural and magnetic properties of epitaxial FeMn2O4 thin film on MgO(100) substrate. The reflection high energy electron diffraction (RHEED) and X-ray diffraction (XRD) results indicated that films were epitaxially grown on MgO(100) without the impurity phases. The valance states of Fe and Mn in the FeMn2O4 film were carried out using x-ray photoelectron spectrometer (XPS). The magnetic properties were measured by vibrating sample magnetometer (VSM), indicating that the samples are ferromagnetic at room temperature. The structural detail and origin of magnetic ordering in FeMn2O4 will be discussed.

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.54-61
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• 1991

YBCO films deposited on MgO(100) and Si(100) by rf-magnetron sputtering using stoichiometric single target were annealed under oxygen atmosphere at $880^{\circ}C$ for 1 hr. The microstructure and superconducting properties of YBCO thin films depended on the composition of pre-annealed thin films. Basal planesuperconducting particles grown on MgO(100) substrate had small and rod-like shade due to preferred orientation, while superconducting film grown on the basal plane-superconducting particles showed round-shape particles. If pre-annealed thin film had nonstoichiometric composition, liquid phase was formed during the heat treatment, which made it easy for particles to grow in the preferred orientation and thus to form textured structure. But the thin films with the textured structure did not show good superconducting properties, especially $T_c$, since the liquid phase transformed into second phase in the grain boundary during the cooling. The effect of the second phase on $T_{c, \;zero}$ was greater than that on $T_{c, \;on}$.

• Progress in Superconductivity
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• v.12 no.2
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• pp.118-123
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• 2011

The properties of $2^{nd}$ generation high temperature superconducting wire, coated conductor strongly depend on the quality of superconducting oxide layer and property of metal substrate is one of the most important factors affecting the quality of coated conductor. Good mechanical and chemical stability at high temperature are required to maintain the initial integrity during the various process steps required to deposit several layers consisting coated conductor. And substrate need to be nonmagnetic to reduce magnetization loss for ac application. Hastelloy and stainless steel are the most suitable alloys for metal substrate. One of the obstacles in using stainless steel as substrate for coated conductor is its difficulties in making smooth surface inevitable for depositing good IBAD layer. Conventional method involves several steps such as electro polishing, deposition of $Al_2O_3$ and $Y_2O_3$ before IBAD process. Chemical solution deposition method can simplify those steps into one step process having uniformity in large area. In this research, we tried to improve the surface roughness of stainless steel(SUS310). The precursor coating solution was synthesized by using yttrium complex. The viscosity of coating solution and heat treatment condition were optimized for smooth surface. A smooth amorphous $Y_2O_3$ thin film suitable for IBAD process was coated on SUS310 tape. The surface roughness was improved from 40nm to 1.8 nm by 4 coatings. The IBAD-MgO layer deposited on prepared substrate showed good in plane alignment(${\Delta}{\phi}$) of $6.2^{\circ}$.

• Progress in Superconductivity
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• v.5 no.2
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• pp.105-108
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• 2004

We have studied effects of in-situ annealing on the fabrication of superconducting MgB$_2$ thin films prepared by rf magnetron co-sputtering. The Films were deposited on A1$_2$O$_3$ (1102) substrates at room temperature by using Mg and B targets. To trap remnant $O_2$ gas in the chamber, we used 20 mtorr Af sputter-gas balanced with 5 mol % of H$_2$ gas. To enhance adhesion to the substrate a thin layer of B was deposited prior to the codeposition of Mg and B. After completion of the film deposition, an additional Mg layer was deposited on top to compensate for Mg loss during the subsequent in-situ annealing. We have investigated the effects of two most important annealing parameters that are the Mg-to-B composition ratio and the annealing temperature. The range of the Mg-to-B composition ratio was from 0.42 to 0.85, and that of the annealing temperature was 500 $^{\circ}C$∼750 $^{\circ}C$. The Best result was obtained for the composition ratio of about 10% Mg excess from the stoichiometry and the annealing temperature of 700 $^{\circ}C$. Based on these results, we obtained films with T$_{c}$ : 36.5 K by further refining the fabrication process.s.

• Journal of Environmental Science International
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• v.13 no.9
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• pp.807-817
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• 2004

The modified biochemical oxygen demand (MBOD) were conducted to evaluate the water quality and fertility in the Mangyeong river from november 2002 to april 2003. MBOD method was used to evaluate algal growth potentials and their limiting factors. MBOD depends on the amount of available inorganic nutrient and organic substrate during 5-day incubation in the dark condition at $20^{\circ}C.$ The MBOD assay depends on inorganic nutrients such as phosphorus and nitrogen as well as reduced carbon as called MBOD, MBOD-P, and MBOD-N, respectively. The concentration of pollutants were in the range of 3.08～48.36 mg/L for COD. The concentration of nutrients were in the range of 0.37～111.62 mg/L for dissolved inorganic nitrogen (DIN) and 0.00～1.03 mg/L for dissolved inorganic phosphorus (DIP). The results of MBOD bioassay showed that the MBOD, MBOD-P and MBOD-N values were 15～173 mg $O_2/L,$ 13～165 mg $O_2/L$ and 66～175 mg $O_2/L$ ranges, respectively. The MBOD values are found to be the highest in Iksan River and the lowest in Hari River throughout the Mangyeong River. The relationships of MBOD, MBOD-P and MBOD-N in MBOD method were generally found in MBOD$\risingdotseq$ MBOD-P$\risingdotseq$MBOD-N. But the result of Gosan was appeared to MBOD$\risingdotseq$MBOD-N > MBOD-P. The MBOD-N value was higher 3 to 5 times than the MBOD-P value in the Gosan station. The algal growth potentials expressed as the concentration of chlorophyll-a were maximum 20 times more than algal biomass in the water column.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.40-40
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• 2008

$InGaZnO_4$ based thin film transistors (TFTs) are of interest for large area and low cost electronics. The TFTs have strong potential for application in flat panel displays and portable electronics due to their high field effect mobility, high on/off current ratios, and high optical transparency. The application of such room temperature processed transistors, however, is often limited by the operation voltage and long-tenn stability. Therefore, attaining an optimum thickness is necessary. We investigated the thickness dependence of a room temperature grown $MgO_{0.3}BST_{0.7}$ composite gate dielectric and an $InGaZnO_4$ (IGZO) active semiconductor on the electrical characteristics of thin film transistors fabricated on a polyethylene terephthalate (PET) substrate. The TFT characteristics were changed markedly with variation of the gate dielectric and semiconductor thickness. The optimum gate dielectric and active semiconductor thickness were 300 nm and 30 nm, respectively. The TFT showed low operating voltage of less than 4 V, field effect mobility of 21.34 cm2/$V{\cdot}s$, an on/off ratio of $8.27\times10^6$, threshold voltage of 2.2 V, and a subthreshold swing of 0.42 V/dec.