• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.87-92
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• 1996

The PLT thin films on (100) cleaved MgO single crystal substrate have been fabricated by rf magnetron sputtering using a PbO-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of $Ar/O_{2}$, and rf power density were $640^{\circ}C$, 10 mTorr, 10 seem, and $1.7\;W/cm^{2}$, respectively. In these conditions, the PLT thin film showed the Pb/Ti ratio of 1/2 at the surface, the resistivity of $8{\times}10^{11}{\Omega}{\cdot}cm$, and dielectric constant of 110. The pyroelectric infrared sensors with these PLT thin films showed the peak to peak voltage of 450 m V and signal to noise ratio of 7.2.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.16-23
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• 2000

The epitaxial growth of $CeO_2$ films has been investigated on three different substrates-Si(111), $SrTiO_3$(001), and MgO(001)-over wide range of growth parameters using oxygen-plasma-assisted molecular beam epitaxy. Pure-phase, single-crystalline epitaxial films of $CeO_2$ (001) have been grown only on $SrTiO_3$(001). We discuss the growth conditions in conjunction with the choice of substrates required to synthe-size this oxide, as well as the associated characterization by menas of x-ray diffraction, reflection high-energy electron diffraction, low-energy electron diffraction, and x-ray photoelectron spectroscopy and diffraction. Successful growth of single crystalline $CeO_2$ depends critically on the choice of substrate and is rather insensitive to the growth conditions studied in this investigation. $CeO_2$(001) films on $SrTiO_3$exhibit the sturcture of bulk $CeO_2$ without surface reconstructions. Ti outdiffusion is observed on the films grown temperatures above $650^{\circ}C$.

• Horticultural Science & Technology
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• v.31 no.5
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• pp.544-551
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• 2013

The effect of different silicon (Si) sources and methods of application on the growth of two chrysanthemum cultivars grown in a soilless substrate was investigated. Rooted terminal cuttings of Dendranthema grandiflorum 'Lemmon Eye' and 'Pink Eye' were transplanted into pots containing a coir-based substrate. A nutrient solution containing 0 or $50mg{\cdot}L^{-1}$ Si from calcium silicate ($CaSiO_3$), potassium silicate ($K_2SiO_3$) or sodium silicate ($Na_2SiO_3$) was supplied once a day through an ebb-and-flood sub irrigation system. A foliar spray of 0 or $50mg{\cdot}L^{-1}$ Si was applied twice a week. Cultivar and application method had a significant effect on plant height. Cultivar, application method, and Si source had a significant effect on plant width. Of the three Si sources studied, $K_2SiO_3$ was found to be the best for the increasing number of flowers, followed by $CaSiO_3$ and $Na_2SiO_3$. In both the cultivars, sub irrigational supply of Si developed necrotic lesions in the older leaves at the beginning of the flowering stage as compared to the control and foliar spray of Si. Cultivar, application method, Si source, and their interactions had significant influence on leaf tissue concentrations of calcium (Ca), potassium (K), phosphorus (P), magnesium (Mg), sulfur (S), sodium (Na), boron (B), iron (Fe), and zinc (Zn). The addition of Si to the nutrient solution decreased leaf tissue concentrations of Ca, Mg, S, Na, B, Cu, Fe, and Mn in both cultivars. The greatest Si concentration in leaf tissue was found in 'Lemmon Eye' ($1420{\mu}g{\cdot}g^{-1}$) and 'Pink Eye' ($1683{\mu}g{\cdot}g^{-1}$) when $K_2SiO_3$ was applied through a sub irrigation system and by foliar spray, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.867-871
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• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.41-44
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• 1998

Dual mode resonators were fabricated using high temperature superconductor. The deposited material was $Y_1Ba_2Cu_3O_{7-x}$(YBCO) on MgO(100) substrate using pulsed laser deposition. Dual mode resonators were patterned by standard photolithography process and wet etching. At the back-side of the substrate, the ground plane with the metal layer of Ti and Ag was fabricated. The transition temperatures of YBCO films were 85-88 K, and network analyzer was used for testing the performance of the resonators. The input/output feedline angles of each resonator were $60^{\circ}$and $100^{\circ}$. The resonant frequency of resonators was 10 GHz. In this paper, dual mode resonator was fabricated for the application of satellite communication.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.712-717
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• 2014

Glass ceramic has a high mechanical strength and low sintering temperature. So, it can be used as a thick film substrate or a high strength insulator. A series of glass ceramic samples based on MgO-$Al_2O_3-SiO_2-ZrO_2$ (MASZ) were prepared by melting at $1,600^{\circ}C$, roll-quenching and heat treatment at various temperatures from $900^{\circ}C$ to $1,400^{\circ}C$. Dependent on the heat treatment temperature used, glass ceramics with different crystal phases were obtained. Their nucleation behavior, microstructure and mechanical properties were investigated with differential thermal analysis (DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Vicker's hardness testing machine. With increasing the heat treatment temperature of MASZ samples, their hardness and toughness initially increase and then reach the maximum points at $1,300^{\circ}C$, and begin to decrease at above this temperature, which is likely to be due to the softening of glass ceramics. As the content of $ZrO_2$ in MAS glass ceramics increases from 7.0 wt.% to 13 wt.%, Vicker's hardness and fracture toughness increase from $853Kg/mm^2$ to $878Kg/mm^2$ and $1.6MPa{\cdot}m^{1/2}$ to $2.4MPa{\cdot}m^{1/2}$ respectively, which seems to be related with the nucleation of elongated phases like fiber.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.171-176
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it, deposited by reactive sputtering and rf magnetron sputtering, respectively, were analyzed with annealing temperature and time by four-point probe, SEM and XRD. Under annealing conditions of $1000^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-film, and the sheet resistivity and the resistivity of Pt thin-film deposited on it were $0.1288\;{\Omega}/{\square}$ and $12.88\;{\mu}{\Omega}{\cdot}cm$, respectively. We made Pt resistance pattern on $SiO_2$/Si substrate by lift-off method and fabricated thin-film type Pt-RTD(resistance thermometer device) for micro thermal sensors by Pt-wire, Pt-paste and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, the TCR value of fabricated Pt-RTD with thickness of $1.0{\mu}m$ was $3927\;ppm/^{\circ}C$ close to the Pt bulk value. Resistance values were varied linearly within the range of measurement temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.05a
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• pp.9-9
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• 2009

Coated conductor is required to have good critical current property for high efficiency of electric power applications. Until now, long coated conductor does not show high Jc over 3 MA/$cm^2$ in thick superconducting layer because of texture degradation by thick superconducting layer. In this study, in order to overcome this issue, thicker superconducting layer was deposited with optimized conditions to reduce the degradation of critical current density. SmBCO superconducting coated conductor was deposited with 1~3 um of thickness at $750\sim850^{\circ}C$ under 15~20 mTorr of oxygen partial pressure using batch type EDDC( evaporation using drum in dual chamber). The buffered substrate for superconducting layer deposition was used IBAD-MgO template with the architecture of $LaMnO_3/MgO/Y_2O_3/Al_2O_3$/Hastelloy. After fabrication of coated conductor, critical current was measured by 4-prove method under self-magnetic field and 77K. In addition, surface morphology and texture were analyzed by SEM and XRD, respectively. 3 um thick SmBCO coated conductor shows highest $I_C$ values of 638A/cm-w in 1 m long in the world.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.101-105
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• 2015

ZnO is gathering great interest for large square optoelectrical devices of flat panel display (FHD) and solar cell as a transparent conductive oxide (TCO). Herewith, Mg and IIIA (Al, In) co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % of Mg and ZnO have been investigated. The atomic weight % Al and In are of 3% and kept constant throughout. The numbers of samples were prepared according to their different contents, which are $M_{3%}AZO_{94%}$, $M_{4%}AZO_{93%}-(MAZO)$ and $M_{3%}IZO_{94%}$, $M_{4%}IZO_{93%}-(MIZO)$ respectively. A RF power of 225 W and working pressure of 6 m Torr was used for the deposition at $300^{\circ}C$. All of the two thin film show good uniformity in field emission scanning electron microscopy image. $M_{3%}AZO_{94%}$ thin film shows overall better performance among the all. The film shows the best lowest resistivity, carrier concentration, mobility and Sheet resistance and is found to be are of $8.16{\times}10^{-4}{\Omega}cm$, $4.372{\times}10^{20}/cm^3$, $17.5cm^2/vs$ and $8.9{\Omega}/sq$ respectively. Also $M_{3%}AZO_{94%}$ thin film shows the relatively high optical band gap energy of 3.7 eV with high transmittance more than 80% in visible region required for the better solar cell performance.

• Food Science and Biotechnology
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• v.18 no.1
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• pp.267-270
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• 2009

Naringenin is a bioactive flavanone containing antioxidative, anti-inflammatory, and anticarcinogenic properties. The inhibitory effects on hyaluronidase of naringenin and its novel derivatives were evaluated. Among these flavonoids at $200{\mu}M$ concentration, 7-O-butyl naringenin had the highest inhibitory effect on hyaluronidase with 44.84%. In addition, For naringenin at concentrations of 0, 150, and $190{\mu}M$, the apparent Michaelis constants ($_{app}K_m$) were calculated to be $0.60{\pm}0.02$, $0.43{\pm}0.02$, and $0.41{\pm}0.01\;mg/mL$ of substrate, respectively; for 7-O-butyl naringenin at 0, 20, and $30{\mu}M$ concentrations, those were $0.44{\pm}0.03$ and $0.27{\pm}0.03\;mg/mL$, respectively. The $V_{max}$ values at 150 and $190{\mu}M$ naringenin were $0.59{\pm}0.02$ and $0.56{\pm}0.01\;mg/mL/min$, respectively; and those at 20 and $30{\mu}M$ 7-O-butyl naringenin were $0.50{\pm}0.02$ and $0.33{\pm}0.02\;mg/mL/min$, respectively. However, the slopes of each inhibitory reaction were not significantly different. Therefore, naringenin and 7-O-butyl naringenin were shown to be uncompetitive inhibitors. These results demonstrate the potential use of 7-O-butyl naringenin as an anti-inflammatory substance.