• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.213-215
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• 2007

To clarify processes responsible for improved characteristics of protective layers (e.g. SrCaO) the ion-induced electron emission and photoemission from these layers were analyzed. Additionally, a study of ternary Mg-, Ca-, Ba-based compounds as candidate materials for a protective layer of Plasma Display Panels has been performed as well.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.961-964
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• 2008

The MgO protective layer of PDP has a strong influence on address delay. The relation, however, is not clearly understood due to the difficulty of analysis which is caused by surface charging. This paper suggests a way to avoid the charging problem and shows the correlation between workfunction measured by UPS and address delay.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.187.1-187
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• 2002

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.906-909
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• 2006

The secondary electron emission coefficient $({\gamma})$ of the cathode is an important factor for improving the discharge characteristics of AC-PDPs because of its close relationship to discharge voltage. In AC-PDPs, MgO is most widely used as a surface protective layer. In this experimental, we have investigated the electronic structure of the energy band structure of the MgO layer responsible for the high ${\gamma}$. The MgO layers have been deposited by electron beam evaporation method, where the $O_2$ partial pressures have been varied as 0, $5.2{\times}10^{-5}$ torr, $1.0{\times}10^{-4}$ torr, and $4.1{\times}10^{-4}$ torr, in this experiment. It is noted that work function that is energy gap between surface and first defect level of MgO layer has the lowest value for the highest O2 partial pressure of $4.1^{\ast}10^{-4}$ Torr.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.16-16
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• 2012

Mg and its alloys have been of great interest because of their low density of 1.7, 30% lighter than Al, but their wide applications have been limited because of their poor resistances against corrosion and/or abrasion. Corrosion resistance of Mg alloys can be improved by formation of anodic films using anodic oxidation method in aqueous electrolytes. Plasma electrolytic oxidation (PEO) is one of anodic oxidation methods by which hard anodic films can be formed as a result of micro-arc generation under high electric field. PEO method utilize not only substrate elements but also chemical components in electrolytes to form anodic films on Mg alloys. PEO films formed on AM50 magnesium alloy in an acidic fluozirconate electrolyte were observed to consist of mainly $ZrO_2$ and $MgF_2$. Liu et al reported that PEO coating on AM30 Mg alloy consists of $MgF_2$-rich outer porous layer and an MgO-rich dense inner layer. PEO films prepared on ACM522 Mg die-casting alloy in an aqueous phosphate solution were also reported to be composed of monoclinic $Mg_3(PO_4)_2$. $CeO_2$-incorporated PEO coatings were also reported to be formed on AZ31 Mg alloys in $CeO_2$ particle-containing $Na_2SiO_3$-based electrolytes. Magnesium tin hydroxide ($MgSn(OH)_6$) was also produced on AZ91D alloy by PEO process in stannate-containing electrolyte. Effects of $OH^-$, $F^-$, $PO{_4}^{3-}$ and $SiO{_3}^{2-}$ ions and alloying elements of Al and Sn on the formation of PEO films on pure Mg and Mg alloys and their protective properties against corrosion have been investigated in this work. $PO{_4}^{3-}$, $F^-$ and $SiO{_3}^{2-}$ ions were observed to contribute to the formation of PEO films but $OH^-$ ions were found to break down the surface films under high electric field. The effect of pulse current on the formation of PEO films will be also reported.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 창립10주년 제20회 학술발표회
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• pp.202-202
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• 2001

• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제23회 학술발표회 초록집
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• pp.197-197
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• 2002

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 추계학술발표회 초록집
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.125.1-125
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• 1998

• 한국세라믹학회지
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• 제35권12호
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• pp.1301-1307
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• 1998

1550$^{\circ}C$~1600$^{\circ}C$의 온도범위에서 stamp 재의 원료로서 사용되는 돌로마이트 클링커의 용강에 의한 침식거동을 연구 하였다. 돌로마이트 클링커중에 생성되는 magnesioferrite(MgO · Fe2O3)와 dicalciumferrite(2CaO · Fe2O3) 중에서 용강중으로의 용출은 dicalciumferrite가 선행되었으며, dicalciumferrite가 용출된 가동면 부분에서는 magnesioferrite의 보호층이 생성되었다. Fe2O3가 첨가되지 않은 돌로마이트 클링커의 경우에는 침투된 용강과 클링커중의 MgO와 CaO가 반응하여 각각 magnesioferrote와 dicalciumferrite를 생성하지만, 생성된 magnesioferrite는 MgO의 skeleton을 유지하면서 magnesioferrite를 생성하는 반면에 CaO는 skeleton이 소멸되어 magnesioferrite의 입계상의 형태로 존재하였다. Fe2O3가 첨가된 돌로마이트 클링커의 경우에는 출발물질중에 존재하던 magnesioferrite의 분해반응에 의하여 생성된 Fe2O3가 클링커의 가동면으로 이동하여 MgO와의 반응에 의하여 magnesioferrite를 생성함으로써 용강의 침투를 억제하며, Fe2O3가 가동면으로 확산된 층에서는 CaO가 Fe2O3-free CaO로서 존재하였다. 용강의 온도가 상승됨에 따라 Fe2O3가 함유되어 있지 않는 돌로마이트 클링커의 경우에는 dicalciumferrite의 생성깊이는 증가되는 반면에 돌로마이트 클링커의 가동면에 생성되는 magnesioferrite의 층은 미약하였다. 반면에, Fe2O3가 함유된 돌로마이트 클링커는 용강의 온도가 상승됨에 따라 dicalciumferrite의 분해반응에 의하여 생성된 CaO 성분이 용강중으로 용출되는 양이 증가되어 magnesioferrite의 층이 두꺼울 뿐만 아니라 magnesioferrite의 입성장도 수반되었다.