• Title/Summary/Keyword: MgO film

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A Study of MgO Thin Film′s Properties Fabricated by ICP Magnetron Sputtering Method (유도결합 플라즈마 마그네트론 스퍼터링에 의한 MgO 박막의 특성 연구)

  • 김선호;주정훈
    • Journal of the Korean institute of surface engineering
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    • v.37 no.3
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    • pp.169-174
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    • 2004
  • MgO thin films were reactively deposited using an internal inductively coupled plasma assisted sputtering method varying reactive gas ratio to get stoichiometric film composition, and bipolar dc substrate bias to suppress micro arcs. The minimum frequency required for arc suppression was about 10KHz depending on ICP power. Their crystallinity was analyzed using X-ray diffraction and surface morphology using AFM. The surface was very smooth with rms roughness less than 0.42nm. The preferred orientation of the films were changing from (200) to bulk-like characteristics as Ar: $O_2$ratio was controlled to 10 : 2. Optical emission spectroscopy revealed that there were two distinct discharge modes: a blue one and a green one, where enhanced emission from Ar and Mg were observed. This cannot simply be understood by metallic or oxide mode of reactive sputtering due to ICP coupled to magnetron discharge.

A Study on the Characteristics of MgO Thin Film Prepared by RF Magnetron Sputtering Method (RF 마그네트론 스퍼터링법을 이용한 MgO 박막의 특성에 관한 연구)

  • Jung, Yeon-Woo;Yoon, Cha-Keun;Whang, Ki-Woong
    • Proceedings of the KIEE Conference
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    • 1996.11a
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    • pp.206-208
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    • 1996
  • Thin films of magnesium oxide(MgO) were deposited on glass substrates by RF magnetron sputtering method. The characteristics of MgO thin films were analyzed as a function of various deposition conditions such as substrate temperature, substrate self-bias, input power and pressure. As the substrate temperature and bias voltage were increased, the grain size of MgO thin film increased. XRD peaks of (111) and (222) direction became dominant, as the substrate bias voltage increases and temperature decreases.

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A STUDY ON THE RELATIONSHIP BETWEEN PLASMA CHARACTERISTICS AND FILM PROPERTIES FOR MgO BY PULSED DC MAGNETRON SPUTTERING

  • Nam, Kyung H.;Chung, Yun M.;Han, Jeon G.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.11a
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    • pp.35-35
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    • 2001
  • agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

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A Study on the Glow Discharge Characteristics of MgO thin film prepared by Unbalanced Magnetron Sputtering (불평형 마그네트론 스파터링에 의해 형성된 MgO 박막의 글로우 방전특성에 관한 연구)

  • Kim, Young-Kee;Park, Jung-Tae;Ko, Kwang-Sic;Kim, Gyu-Seup;Park, Chung-Hoo;Cho, Jung-Soo
    • Proceedings of the KIEE Conference
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    • 1999.07e
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    • pp.2236-2238
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    • 1999
  • This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by RF unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP. The minimum discharge voltage is obtained for the sample of substrate holder bias voltage -10V. The main factors that improves the discharge characteristics by applied bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process Moreover, the anti-sputtering characteristics of MgO thin film by UBMS is more excellent than that of balanced magnetron sputtering(BMS) and E-beam evaporation method.

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The study of the relationships between the MgO crystal orientation and the conditions of deposition on AC-PDP (AC PDP의 MgO 결정방향성과 증착조건간의 상관관계에 관한 연구)

  • Jang, Yong-Min;Heo, Jeong-Eun;Kim, Duk-Won;Shin, Joong-Hong;Park, Chung-Hoo
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1523-1524
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    • 2006
  • There arc several important issues in AC PDP researches such as cost reduction, reliability, and good image quality. The properties of MgO layer is thought to be one of the most important (actors that affects the panel reliability through the firing voltage variation. The MgO thin film mainly has (111), (200) and (220) crystal orientation. It is reported that (111)-oriented film helps decreasing the discharge voltage, and (200)-oriented film improves the misfiring on high temperature and the image sticking. In this study, we investigated the relations between the crystal orientation and e-beam evaporation process parameters such asdeposition rate, temperature of substrate, and distance between the target(MgO tablet) and the substrate.

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Analysis on the Aging Process of ac-Plasma Display Panel

  • Park, Min-Soo;Park, Deok-Hai;Kim, Bo-Hyun;Ryu, Byung-Gil;Kim, Sung-Tae;Seo, Gi-Weon;Kim, Dae-Young;Park, Seung-Tea;Kim, Jong-Bin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.126-129
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    • 2006
  • AC-plasma display panels were examined before and after the aging process to analyze the effect of the aging process. The gas analysis was done to detect the impurity gases out of the MgO film and phosphor by a residual gas analyzer. There were no differences found in the components. The MgO film was analyzed to find out the effect of an ion bombardment due to discharge. The surface roughness of the MgO film was different from regional groups due to the different degree of ion bombardments. XPS analysis showed that the 8 hour aging process was not sufficient to remove $Mg(OH)_2$ and $MgCO_3$ existed on the MgO surface. Photoluminescence measurement showed the small deterioration of blue and green phosphor.

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Preparation of epitaxial bismuth titanate thin films by the sol-gel process (졸-겔법을 이용한 Epitaxial Bismuth Titanate 박막의 제조)

  • 김상복;이영환;윤연흠;황규석;오정선;김병훈
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.2
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    • pp.56-62
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    • 2003
  • Epitaxial $Bi_4Ti_3O_{12}$ films on $SrTiO_3$(100), L$aA1O_3$(100) and MgO(100) were prepared by sol-gel process using metal naphthenate as a starting material. As-deposited films were pyrolyzed at $500^{\circ}C$ for 10 min In air and annealed at $750^{\circ}C$ for 30 min in air. Crystallinity and in-plane alignment of the film were investigated by X-ray diffraction $\theta$-2$\theta$ scan and P scanning. A field emission-scanning electron microscope and an atomic force microscope were used for characterizing the surface morphology and the surface roughness of the film. The film prepared on MgO(100) showed the most poor crystallinity and in-plane alignment, compared to those on the other substrates. While the films on $LaA1O_3$(100) and $SrTiO_3$(100) having high crystallinity and in-plane alignment showed the form of columnar grain growth, the film on MgO(100) which had poor crystallinity showed the form of acicula grain growth.

Stress Effects CoCr2O4 Film on MgO and MgAl2O4 Grown by RF-Sputter Process

  • Ko, Hoon;Choi, Kang-Ryong;Park, Seung-Iel;Shim, In-Bo;Kim, Sam-Jin;Kim, Chul-Sung
    • Journal of Magnetics
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    • v.13 no.4
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    • pp.163-166
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    • 2008
  • Multiferroic $CoCr_2O_4$ film was deposited on MgO and $MgAl_2O_4$ substrates by the rf-sputtering process. The films were prepared at an RF-magnetron sputtering power of 50 W and a pressure of 10 mtorr (20 sccm in Ar), and at substrate temperatures of $550^{\circ}C$. The crystal structure was determined to be a spinel (Fd-3m) structure by means of X-ray diffraction (XRD) with Cu $K{\yen}{\acute{a}}$ radiation. The thickness and morphology of the films were measured by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The magnetic properties were measured using a Superconducting Quantum Interference Device (SQIUD) magnetometer. While the ferrimagnetic transitions were observed at about 93 K, which was determined as the Neel temperature, the magnetic properties all show different behaviors. The differences between the magnetic properties can be explained by the stress effects between $CoCr_2O_4$ and the substrates of MgO and $MgAl_2O_4$.

Preparation of Nb doped SrTiO$_3$ Film by Pulsed Laser Deposition and Optimum Processing Conditions (Plused Laser Depositon을 이용한 Nb doped SrTiO$_3$ 박막의 제작과 최적 조건)

  • ;Seishiro Ohya
    • Journal of the Korean Ceramic Society
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    • v.36 no.2
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    • pp.116-121
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    • 1999
  • 0.5 wt%Nb-doped SrTiO3(Nb: STO) thin film was prepared on MgO(100) single crystal substrates by Pulsed Laser Deposition (PLD). The Crystallinity and the orientation of Nb:STO thin films were characterized by XRD with changing the thin film processing condition-oxygen partial pressure, substrate temperature, deposition time and the distance between target and substrate. The orientation of Nb:STO thin film showed (100), (110) and (111) orientations at the substrate temperature of $700^{\circ}C$. The lattice parameter of Nb:STO decreased with increasing Po2 and showed 0.3905 nm at Po2=100 Pa, which was similar to that of the bulk. The thickness of Nb:STO thin film increased with increasing the deposition time and with decreasing the distance between target and substrate.

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The Electrochemical Properties and Mechanism of Formation of Anodic Oxide Films on Mg-Al Alloys

  • Kim, Seong-Jong;Okido, Masazumi
    • Bulletin of the Korean Chemical Society
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    • v.24 no.7
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    • pp.975-980
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    • 2003
  • The electrochemical properties and the mechanism of formation of anodic oxide films on Mg alloys containing 0-15 mass% Al, when anodized in NaOH solution, were investigated by focusing on the effects of anodizing potential, Al content, and anodizing time. The intensity ratio of Mg(OH)₂ in the XRD analysis decreased with increasing applied potential, while that of MgO increased. Mg(OH)₂ was barely detected at 80 V, while MgO was readily detected. The anti-corrosion properties of anodized specimens at each constant potential were better than those of non-anodized specimens. The specimen anodized at an applied potential of 3 V had the best anti-corrosion property. The intensity ratio of the β phase increased with aluminum content in Mg-Al alloys. During anodizing, the active dissolution reaction occurred preferentially in β phase until about 4 min, and then the current density increased gradually until 7 min. The dissolution reaction progressed in α phase, which had a lower Al content. In the anodic polarization test in 0.017 mol·$dm^{-3}$ NaCl and 0.1 mol·$dm^{-3}$ Na₂SO₄ at 298 K, the current density of Mg-15 mass% Al alloy anodized for 10 min increased, since the anodic film that forms on the α phase is a non-compacted film. The anodic film on the α phase at 30 min was a compact film as compared with that at 10 min.