• Title/Summary/Keyword: MgO film

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Characteristics of an MgO Green Sheet as a Protective Layer of AC-PDP

  • Park, Deok-Hai;Park, Min-Soo;Kim, Bo-Hyun;Ryu, Byung-Gil;Kim, Sung-Tae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.387-390
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    • 2006
  • The protective layer of AC-PDP was fabricated by laminating an MgO green sheet. The MgO green sheet was made by coating MgO solution composed of solvent, dispersant, binder, and MgO nano-powder. The MgO solution was coated by the die casting method on the base film. We fabricated three kinds of MgO green sheets of which thicknesses were 20, 28, and $40\;{\mu}m$, respectively. The MgO nano-powder showed lower CL intensity and ${\gamma}i$ than the e-beam MgO. The MgO green sheet applied panels showed low luminance and current density. The efficiency was almost same as the conventional e-beam MgO panel.

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Protective Metal Oxide Coatings on Zinc-sulfide-based Phosphors and their Cathodoluminescence Properties

  • Oh, Sung-Il;Lee, Hyo-Sung;Kim, Kwang-Bok;Kang, Jun-Gill
    • Bulletin of the Korean Chemical Society
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    • v.31 no.12
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    • pp.3723-3729
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    • 2010
  • We investigated the high-excitation voltage cathodoluminescence (CL) performance of blue light-emitting (ZnS:Ag,Al,Cl) and green light-emitting (ZnS:Cu,Al) phosphors coated with metal oxides ($SiO_2$, $Al_2O_3$, and MgO). Hydrolysis of the metal oxide precursors tetraethoxysilane, aluminum isopropoxide, and magnesium nitrate, with subsequent heat annealing at $400^{\circ}C$, produced $SiO_2$ nanoparticles, an $Al_2O_3$ thin film, and MgO scale-type film, respectively, on the surface of the phosphors. Effects of the phosphor surface coatings on CL intensities and aging behavior of the phosphors were assessed using an accelerating voltage of 12 kV. The MgO thick film coverage exhibited less reduction in initial CL intensity and was most effective in improving aging degradation. Phosphors treated with a low concentration of magnesium nitrate maintained their initial CL intensities without aging degradation for 2000 s. In contrast, the $SiO_2$ and the $Al_2O_3$ coverages were ineffective in improving aging degradation.

Effect of Defect Energy levels on the AC PDP Discharging Characteristics (MgO 보호막의 결함 전위 레벨이 AC-PDP 방전 특성에 미치는 효과)

  • Kwon, Sang-Jik;Kim, Yong-Jae;Cho, Eou-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.12
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    • pp.12-17
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    • 2007
  • The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel(PDP) were investigated and analyzed. Mgo films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure, were inspected using XRD(X-ray diffractometry), AFM(atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary, electron emission coefficient $(\gamma)$ was obtained at the evaporation rate of $5\AA/sec$. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of $5\AA/sec$. In the MgO film deposited at $5\AA/sec$, the (200) orientation and $F^+$ center were most intensive. The XRD results and cathode-luminescence(CL) spectra show the $\gamma$ values are correlated with $F/F^+$ centers of the molecular structure of MgO films.

Analysis of structural properties of epitaxial BST thin films prepared by pulsed laser deposition (펄스형 레이저 증착법으로 제조된 에피탁시 BST 박막의 구조 분석)

  • 김상섭;제정호
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.355-360
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    • 1998
  • Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$thin films of two different thickness (~250 $\AA$ and ~1340 $\AA$) on MgO(001) prepared by a pulsed laser deposition method were studied by synchroton x-ray scattering measurements. The film initially grew on MgO(001) with a cube-on-cube relationship, maintaining it during further growth. As the film grew, the surface of the film became rough significantly, but the interface between the film and the substrate seemed to have changed little. In the early stage, the film was highly strained in a tetragonal structure with the longer axis parallel to the surface normal direction. As the growth proceeded further, it was mostly relaxed to a cubic structure with the lattice parameter of the bulk value and the mosaic distribution improved significantly in both in-plane and out-of-plane directions.

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Fabrication of Pt Thin-film Type Microheater for Thermal Microsensors and Its Characteristics (열형 마이크로센서용 백금박막형 미세발열체의 제작과 그 특성)

  • 정귀상;홍석우
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.6
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    • pp.509-513
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    • 2000
  • The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

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A Study of Thin-Film Transistor with Mg0.1Zn0.9O/ZnO Active Structure (Mg0.1Zn0.9O/ZnO 활성층 구조의 박막트랜지스터 연구)

  • Lee, Jong Hoon;Kim, Hong Seung;Jang, Nak Won;Yun, Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.7
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    • pp.472-476
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    • 2014
  • We report the characteristics of thin-film transistor (TFT) to make the bi-channel structure with stacked $Mg_{0.1}Zn_{0.9}O$ (Mg= 10 at.%) and ZnO. The ZnO and $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited by radio frequency (RF) co-sputter system onto the thermally oxidized silicon substrate. A total thickness of active layer was 50 nm. Firstly, the ZnO thin films were deposited to control the thickness from 5 nm to 30 nm. Sequentially, the $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited to change from 45 nm to 20 nm. The bi-layer TFT shows more improved properties than the single layer TFT. The field effect mobility and subthreshold slope for $Mg_{0.1}ZnO_{0.9}O$/ZnO-TFT are $7.40cm^2V^{-1}s^{-1}$ and 0.24 V/decade at the ZnO thickness of 10 nm, respectively.

Influence of surface geometrical structures on the secondary electron emission coefficient $({\gamma})$ of MgO protective layer

  • Park, W.B.;Lim, J.Y.;Oh, J.S.;Jeong, H.S.;Jeong, J.C.;Kim, S.B.;Cho, I.R.;Cho, J.W.;Kang, S.O.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.806-809
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    • 2003
  • Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

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Ion-induced secondary electron emission coefficient and work function for MgO thin film with $O_2$ plasma treatment

  • Jung, J.C.;Jeong, H.S.;Lee, J.H.;Oh, J.S.;Park, W.B.;Lim, J.Y.;Cho, J.W.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.525-528
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    • 2004
  • The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

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Fabrication of $MgB_2$ Thin Films by rf-sputtering (rf-sputtering을 이용한 $MgB_2$ 박막 제작)

  • 안종록;황윤석;이순걸
    • Progress in Superconductivity
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    • v.4 no.2
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    • pp.153-156
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    • 2003
  • We have studied fabrication of $MgB_2$ thin film on $SrTiO_3$ (001) and r-cut $A1_2$$O_3$ substrates by rf magnetron sputtering method using and $ MgB_2$ single target and two targets of Mg and B, respectively. Based on P -T phase diagram of $MgB_2$ and vapor pressure curves of Mg and B, a three-step process was employed. B layer was deposited at the bottom to enhance the film adhesion to the substrate. Secondly, co-sputtering of Mg and B was done. Finally, Mg was sputtered on top to compensate fur the loss of Mg during annealing. Subsequently, $MgB_2$ films were in-situ annealed in various conditions. The sample fabricated using the three-step process showed $T_{c}$ of 24 K and formation of superconducting $MgB_2$ phase was confirmed by XRD spectra. In case of co-sputtering deposition, $T_{c}$ depended on annealing time and argon pressure. However, those made by single-target sputtering showed non-superconducting behavior or low transition temperature, at best.est.

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The effects of Mg impurities on β-Ga2O3 thin films grown by MOCVD (MOCVD로 성장한 β-Ga2O3 박막에 대한 Mg 불순물 주입 효과)

  • Park, Sang Hun;Lee, Seo Young;Ahn, Hyung Soo;Yu, Young Moon;Yang, Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.28 no.2
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    • pp.57-62
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    • 2018
  • In this study, we investigated the impurity effect of $Ga_2O_3$ doped thin film by simple doping method using Mg acetate solution. Both undoped $Ga_2O_3$ thin films and Mg-doped $Ga_2O_3$ thin films were grown on Si substrates at 600 and $900^{\circ}C$ for 30 minutes by means of a customized MOCVD method. As a result of the surface analysis, there were no obvious morphological differences by Mg impurity implantation. The surface of the thin film grown at $900^{\circ}C$ was rougher than those grown at $600^{\circ}C$ and polycrystallization was achieved. As a result of the optical property analysis, in the case of the doped sample, the overall emission peak was red shifted and the UV radiation intensity was increased. As a result of the I-V curve, the leakage current of the $600^{\circ}C$ growth thin film decreased by the Mg impurity and the photocurrent of the growth thin film of $900^{\circ}C$ increased.