• 한국진공학회지
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• 제22권1호
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• pp.7-12
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• 2013

원자층 증착법을 이용하여 서로 다른 양자우물 폭을 갖는 ZnO-ZnMgO 양자우물들을 제작하였다. 제작된 시료들은 양자우물 폭에 따라 서로 다른 광전이 특성을 나타내는데 우물 폭이 1.5 nm인 시료의 경우 후 열처리에 따른 Mg의 확산에 따라 양자화된 에너지 준위가 형성되지 않았고 이보다 더 넓은 폭을 갖는 시료들의 경우 양자화된 준위의 광전이를 보임을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.117-120
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• 1998

In this study, $Al_2O_3/MgO$ bilayer was prepared with Electron-beam evaporation and the properties of the film was investigated in order to improve the property of MgO film, which is used for the protection layer in PDP(P1asma Display Panel). The thickness of $Al_2O_3/MgO$ bilayer was optimized by the Matrix Theory for the fabrication of antireflection structure for 5350A wavelength. The secondary electron emission yields of as-deposited film and annealed film were measured and compared, the bilayer was considered for the applicability as PDP. XRD showed the strong (200) primary peak of MgO. The intensity of (200) peak in the film annealed at 300C was decreased. As the result of SEM analysis for MgO films and Alz03 films, it is considered that the morphology of the films were improved of roughness and it were condensed by annealing.

• 한국진공학회지
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• 제17권2호
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• pp.96-101
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• 2008

MgO는 플라즈마 디스플레이 패널 (Plasma Display Panel, PDP)의 보호막으로 널리 쓰이고 있다. 기존의 산소 이온빔 보조 증착(Ion-Beam-Assisted Deposition, IBAD) 방법을 이용하여 MgO 보호막을 형성시킨 경우 이온빔의 충전에 의해 야기되는 아크(Arc) 문제 등이 있었다. 이 문제점을 해결하기 위하여, 산소 중성빔 보조증착(Neutral-Beam-Assisted Deposition, NBAD) 방법을 이용하여 MgO를 증착하였다. 그리고 산소 중성빔의 에너지를 변화시킴에 따라 MgO 보호막의 특성과 PDP 패널 방전 특성에 미치는 영향을 분석하였다. 이에 따른 실험 결과로부터 산소 중성빔 에너지가 300eV일 때, 최소 방전 개시 전압, 최고 발광 휘도 및 최고 발광 효율을 얻을 수 있었다.

• 한국진공학회지
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• 제16권5호
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• pp.338-342
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• 2007

MgO는 플라즈마 디스플레이 패널 (Plasma Display Panel, PDP)의 보호막으로 널리 쓰이고 있다. 본 실험에서는 산소 이온 빔을 이용하여 증착된 MgO 보호막의 특성을 조사하였다. MgO 증착 시 보조 산소 이온 빔의 에너지를 변화시킴에 따라 MgO 보호막의 특성과 PDP 패널 발광특성에 미치는 영향을 분석하였다. 본 연구에서는 산소 이온 에너지가 300 eV 일 때 소자의 방전개시전압이 가장 낮게 나타났고, 발광 휘도 및 발광 효율은 가장 높게 나타났다. 또한 산소 이온 빔의 조사에너지에 따라 MgO 박막의 결정성 및 표면조도가 크게 영향을 받는 것을 확인할 수 있었다. 산소 이온 빔 보조 증착 방법을 이용하여 패널의 발광 휘도와 발광 효율 등 발광특성을 개선하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.621-624
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• 2002

In this study, outgassing characteristics of MgO films, and the plasma cleaning effects of the deposited MgO films by atmospheric pressure plasma on outgassing rate were compared. The MgO layer was heated up to 350 $^{\circ}C$ and the outgassing characteristics were observed for the heated conditions. As the main impurity species $H_2,\;H_2O,\;N_2,\;CO_2,\;and\;H_2O$ were released from this panel. Impurity species of plasma treatment panel were lower than non-treated panels for the heating temperature

• 반도체디스플레이기술학회지
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• 제7권2호
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• pp.63-67
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• 2008

The MgO protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by ion beam assisted deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, oxygen neutral beam assisted deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in F/$F^+$ centers, crystal orientation, surface morphology of the MgO thin film, and the discharge characteristics of AC PDP. The lowest firing voltage $(V_f)$ and the highest secondary electron emission coefficient $(\gamma)$ were obtained when the neutral beam energy was 300 eV.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 춘계 학술발표강연 및 논문개요집
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• pp.65-65
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• 2002

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1110-1111
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• 2006

[ $Ti_3SiC_2$ ] was coated with $Al_2O_3$, MgO and $SiO_2$ respectively by sol-gel method and cured at 900 and $1200^{\circ}C$. The coated oxides did not react with $Ti_3SiC_2$ at $900^{\circ}C$ but reacted with it to form $TiC_x$ at $1200^{\circ}C$. The specimen coated with $SiO_2$ at $900^{\circ}C$ formed a dense protecting layer and showed the best oxidation resistance at $800^{\circ}C$ in air. However, the dense protecting layers did not form in $Al_2O_3$ and MgO coated specimens cured even at $900^{\circ}C$. MgO coated specimen showed the worst improvement in the oxidation resistance because the reactivity of MgO with $Ti_3SiC_2$ was highest. On the other hand, the electrical conductivities were measured in MgO and $Al_2O_3$ coated specimens to have TiCx but could not be measured in the $SiO_2$ coated ones because of the nonconductive dense protected layers.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.447-450
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• 2003

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ deposited at 40$0^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4${\mu}{\textrm}{m}$ to 1.1${\mu}{\textrm}{m}$. We achieved the efficiencies of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details on MgF$_2$, CeO$_2$ films, and cell fabrication parameters are presented in this paper.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.593-596
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• 1999

This paper presents a process optimization of antireflectiun (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a doble-layer AR(DLAR) coating of MgF$_2$/CeO$_2$, We investigated CeO$_2$ films as an All layer because they hale a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ film deposited at 400 $^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 7m to 1.1 7m. We achieved the efficiencies of solar cells greater than 15% with 3.12 % improvement with DLAR coatings . Further details on MgF$_2$, CeO$_2$ films, and cell fabrication Parameters are presented in this paper.