• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.120-120
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.115-115
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• 2000

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.228-231
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• 2002

We report the effect of density of thin films on moisture adsorption and hydration of MgO thin film, usually used as a protective layer in AC-PDP After hydration, lots of hemispherical shaped clusters, $Mg(OH)_2$, formed on the surface of MgO thin films. However clusters formed on low-density thin films were bigger than those on high-density films. From ERD spectra, it seemed that the concentration of hydrogen was very high in the region 20 nm from the surface of MgO thin film. The low-density thin film had more hydrogen than high-density thin film. From simulation results of ERD and RBS it was found that hydration reaction also occurred in the inner part of the film. So diffusion of Mg atoms from the inner part of the film to the surface and $H_2O$ molecules from the surface to the inner part of the film is important. And because low density thin film has many short paths for diffusion of Mg atoms and $H_2O$ molecules, low-density thin film is more hydrated. So to suppress hydration of MgO thin films, high-density thin film is needed.

• Journal of Magnetics
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• v.11 no.1
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• pp.25-29
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• 2006

Recent experiments have demonstrated high TMR ratios in MTJs with the MgO barrier [1,2]. The CoFeB/MgO/CoFeB junctions showed better properties than the CoFe/MgO/CoFe junctions because the MgO layer had a good crystalline structure with (001) texture and smooth and sharp interface between CoFeB/MgO [3]. The amorphous CoFeB with 20 at%B starts the crystallization at $340^{\circ}C$ [4] and this crystallization of the CoFeB helps obtaining the high TMR ratio. In this work, the compositional changes in the MgO barrier and at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization were studied in annealed MTJs. XPS depth profiles were utilized. TEM analyses showed that the MgO barrier had (100) texture on CoFeB in the junctions. B in the bottom CoFeB layer diffused into the MgO barrier and B-oxide was formed at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• Journal of the Korean Institute of Navigation
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• v.22 no.4
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• pp.69-75
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• 1998

The super wideband electromagnetic wave absorber in RF-A-PF type has been proposed, which can be used for an anechoic chamber, wall material to prevent TV ghost, etc, In this paper, $Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$ Ferrite Powder has been fabricated. Using this, then, [$Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$-Rubber composite for RF-layer in the RF-A-PF type absorber has been fabricated and its characteristics has been analyzed. As a result, it has been shown that the $Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$-Rubber composit with the quantity $_x$ of $Ni_x$ between 0.5 and 0.6 is suitable for the RF-layer in the case of which the grain size is sub-micrometer order.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.11b
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• pp.39-50
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• 2005

Electrolytic reduction of uranium oxide to uranium metal was studied in a $LiCl-Li_{2}O$ molten salt system. The reduction mechanism of the uranium oxide to a uranium metal has been studied by means of a cyclic voltammetry. Effects of the layer thickness of the uranium oxide and the thickness of the MgO on the overpotential of the cathode and the anode were investigated by means of a chronopotentiometry. From the cyclic voltamograms, the decomposition potentials of the metal oxides are the determining factors for the mechanism of the reduction of the uranium oxide in a $LiCl-3\;wt{\%} Li_{2}O$ molten salt and the two mechanisms of the electrolytic reduction were considered with regards to the applied cathode potential. In the chronopotentiograms, the exchange current and the transfer coefficient based on the Tafel behavior were obtained with regard to the layer thickness of the uranium oxide which is loaded into the porous MgO membrane and the thickness of the porous MgO membrane. The maximum allowable currents for the changes of the layer thickness of the uranium oxide and the thickness of the MgO membrane were also obtained from the limiting potential which is the decomposition potential of LiCl.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3367-3371
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• 2013

MgO nanorods were fabricated by the thermal evaporation of $Mg_3N_2$. The influence of ZnO sheathing and hydrogen plasma exposure on the photoluminescence (PL) of the MgO nanorods was studied. PL measurements of the ZnO-sheathed MgO nanorods showed two main emission bands: the near band edge emission band centered at ~380 nm and the deep level emission band centered at ~590 nm both of which are characteristic of ZnO. The near band edge emission from the ZnO-sheathed MgO nanorods was enhanced with increasing the ZnO shell layer thickness. The near band edge emission from the ZnO-sheathed MgO nanorods appeared to be enhanced further by hydrogen plasma irradiation. The underlying mechanisms for the enhancement of the NBE emission from the MgO nanorods by ZnO sheathing and hydrogen plasma exposure are discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.916-922
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• 2008

AC PDP with MgO protective layer coated with the optimum evaporation rate of $5{\AA}/s$ can generate more enhanced efficiency through the vacuum in-line sealing process. However, the optimized process conditions still require the optimum driving scheme on the ramp-up and ramp-down slope of the reset waveform for enhancing the efficiency. In this paper, for the in-situ vacuum sealed PDP with the optimum evaporation rate of MgO protective layer, the address delay time was investigated with various slopes of ramp waveform during a reset ramp-up and ramp-down period. In this study, the minimum statistical delay time was obtained at the ramp-up rate of $6.0 V/{\mu}s$ and the ramp-down rate of $0.7 V/{\mu}s$ of the reset waveform.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.