• Journal of the Optical Society of Korea
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• v.11 no.4
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• pp.192-195
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• 2007

A high-conversion efficiency, nanosecond pulsed optical parametric generation and amplification with repetition rate of 20 kHz based on a periodically poled MgO-doped stoichiometric lithium tantalate was presented. Pumped by a Q-switched $Nd:YVO_4$ laser at 1064 nm with a pumping power of 4.8W, the generated output power was 1.6W for the signal and idler waves, achieving a slope efficiency of 50%. Using a seed source at signal wave the amplified signal output-pulse energy reached $65{\mu}J$. The obtained maximum gain was 72.4 dB.

• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.715-719
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• 2007

STS444 with or without $La_{0.9}Sr_{0.1}MnO_3$ (LSM)-coating was contacted to $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3$ (LSCF) cathode on various electrolyte materials and the polarization resistance $(R_p)$ was measured by impedance spectroscopy. By making a symmetric half-cell and contacting only one side of the cathode with the interconnect, the effect of chromium (Cr) poisoning was separated from the aging effects. When the LSCF cathode was contacted with LSM-coated STS (stainless steel), $R_p$ of LSCF was lower than that contacted with the uncoated STS. Impedance patterns measured for the working electrode (W.E.), the counter electrode (C.E.) at $600^{\circ}C$ in air were analyzed. Normalized data of net Cr effect showed that $Ce_{0.9}Gd_{0.1}O_2$ (GDC) electrolyte is more tolerant to the chromium poisoning than $La_{0.9}Sr_{0.1}Ga_{0.8}Mg_{0.2}$ (LSGM) or 8 mol% $Y_2O_3-doped$ $ZrO_2$ (YSZ) electrolytes.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.121-124
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• 2006

A novel quantum chemical molecular dynamics program, 'Colors' was developed to simulate the electronic structure of rare earth-doped phosphor materials as well as the destruction processes of MgO protecting layer in plasma display panel (PDP). We have also developed a quantitative prediction method based on Monte Carlo simulation technique to evaluate the electrical conductivity of insulators, semiconductors, and metals as well as the spatial distribution of electron density by Colors code. All these original simulators enable us to study theoretically a variety of materials related to PDP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.153-153
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• 2008

최근 투명전극물질이 LCD, 박막태양전지, smart window, 유기발광소자 등에 폭넓게 이용됨에 따라 그 수요가 급격이 늘어나고 있다. 이러한 투명전극 물질로는 Al : ZnO, Ga : ZnO, $MgIn_2O_4$, $AgSbO_3$, $InGaZnO_4$, ITO, Zn:ITO 등이 있으며 이중 ITO 계 산화물은 우수한 전기적 특성을 바탕으로 이미 상용화 되어있는 상태이다. 그러나 ITO 계 산화물은 indium 의 희소성과 높은 가격 때문에 폭 넓은 분야의 상용화가 어려운 실정이며, 수소 플라즈마 분위기에 화학적으로 불안정한 특성은 Si 박막태양전지 응용에 큰 문제가 되고 있다. 이에 본 연구는 박막태양전지용 ITO 계 투명전극의 indium양을 줄이면서 화학적으로 안정하고, 전기적 특성이 향상된 박막을 제조하기 위해 combinatorial sputter를 이용하여 Zn의 도핑량을 연속적으로 변화시킨 ITO 박막을 제조하였다. 또한 광학적 전기적 특성의 향상을 위해 vacuum, $H_2$, $O_2$ 분위기에서 열처리 후 각 박막의 특성 변화를 관찰하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.353-353
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• 2008

트랜지스터 속도는 현저하게 향상되어지는 반면에 RFICs(RF integrated circuits)는 대용량화, 고속화, 고집적화, 소형화, 고 효율화 온칩(on-chip) 수동소자의 부재에 의해 발전을 이루지 못하였다. 즉, 최근 전자기기의 집적화, 초소형화 됨에 따라 실장 밀도를 높이기 위해 부품의 소형화가 강하게 요구되는 동시에 Radio Frequency(RF)에서 이용가능한 수동소자인 capacitor를 개발하고자 본 논문에서는 손가락 모양(interdigital configuration)을 갖는 RF capacitor를 Ansoft사의 HFSS를 이용하여 이상적인 S-parameter, 정전용랑(capacitance), 손실계수(loss tangent)를 도출하고자 한다. 680um의 $Al_2O_3$ 기판에 BST doped MgO을 30um, Chromium과 gold를 각각 5um로 증착시켰다. 핑거 개수 (n, number), 핑거 길이(1, length), 핑거 간격(g, gap), 핑거 너비(w, width)를 변화 시켜가면서 이상적인 결과 값에 가까운 모양 (interdigital configuration)을 얻을 수 있었다. 핑거 수 3 개 일 때 입력 값에 대하여 손실 없는 출력 값(투과값)을 갖는 $S_{21}$이 1.5GHz에서 6dB이하로 떨어졌으며 핑거 간격이 줄고 핑거 너비가 커지고 핑거길이가 커질수록 높은 캐패시턴스 값을 갖는 것을 확인 할 수 있었다.

• Journal of the Optical Society of Korea
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• v.18 no.1
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• pp.60-64
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• 2014

We report the generation of 3.3-mW single-cycle terahertz (THz) pulses at 1-kHz repetition rate via optical rectification in MgO-doped prism-cut stoichiometric LiNbO3. Efficient pulse-front tilting of 800-nm pulses was realized by an optimized single-lens focusing scheme for radially-symmetric propagation of THz beams. In this geometry, nearly-diffraction-limited THz Gaussian beams with electric field strength as high as 350 kV/cm were generated. The pump-to-THz energy conversion efficiency of $1.36{\times}10^{-3}$ and the extremely high signal-to-noise ratio of ~1:15000 achieved are among the best results for 1-kHz single-cycle terahertz pulse generation ever demonstrated in room temperature operation.

• Journal of the Korean Society of Visualization
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• v.18 no.3
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• pp.61-68
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• 2020

Thermographic phosphor (TP) thermometry is a noncontact optical measurement method and has been applied in many fields such as combustion and heat transfer. However, due to the limitation of bonding technology and measurement method, most TP thermometry studies were conducted only on the air environment with water-soluble binders. In this paper, a temperature measurement technology in water using TP is proposed by coatings of manganese activated magnesium fluorogermanate (Mg4FGeO6:Mn4+, MFG) with Polydimethylsiloxane (PDMS). Four MFG-PDMS coatings with different thicknesses were prepared. The lifetime of MFG was not affected by the thickness of the coating as a result of the experiment and analysis of phosphor intensity using a photomultiplier tube. To measure the surface temperature field of an immerged body in water, a cylinder-type cartridge heater was coated with MFG doped PDMS. Transient surface temperature field was successfully measured even the initial temperature is higher than the boiling point of water.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.10
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• pp.4660-4665
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• 2011

New precursors as a Li adsorbent, $Li_{1.6}(MnM)_{1.6}O_4$ (M=Cu, Ni, Co, Fe), were synthesized by hydrothermal method and their physicochemical properties were discussed. XRD and HRTEM results revealed that the original spinel structure was stabilized by cobalt-doping while Cu-, Ni- and Fe-doping led to structural changes. Such a structural stabilization by Cobalt-doping was maintained after lithium leaching by acid treatment. Li absorption efficiency from seawater was significantly enhanced by using the Cobalt-doped spinel manganese oxide, $Li_{1.6}[MnCo]_{1.6}O_4$, compared to the commercially available $Li_{1.33}Mn_{1.67}O_4$; the adsorbed amount of Li from 1g-adsorbent was 35 and 16 mg by $Li_{1.6}[MnCo]_{1.6}O_4$, and $Li_{1.33}Mn_{1.67}O_4$, respectively.

• Journal of the Mineralogical Society of Korea
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• v.32 no.3
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• pp.213-222
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• 2019

Birnessite (birnessite, $7{\AA}$ manganate, ${\delta}-MnO_2$) is a major mineral comprising manganese nodule. Various synthetic methods have been studied and evaluated because it can be used as an ion exchange agent and a battery recharging material. However, it is difficult to obtain a single birnessite phase because it does not have a stoichiometric chemical composition. Feitknechtite (${\beta}-MnOOH$) is formed as an intermediate product during birnessite synthesis and in this study, the transition of this phase to birnessite was compared by using XRD and SEM. Two different methods, Feng et al. (2004) and Luo et al. (1998), based on redox reaction were used. It was possible to obtain the impurity-free birnessite for the sample aged 60 days at $27^{\circ}C$ by Feng et al. (2004) method and 3 days at $60^{\circ}C$ by Luo et al. (1998) method. The phase transition rate of the feitknechtite phase was slower in the case of $Mg^{2+}$ doped birnessite which was synthesized by Luo et al. (1998) method, and almost single phase almost single phase birnessite was identified at high temperature. Crystal surface and morphology also confirmed the difference between the samples synthesized by two methods.