• Title/Summary/Keyword: Mg-doped

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Optical Properties and Persistent Spectral Hole Burning of $Sm^{2+}$-doped into $Mg_{0.5}Sr_{0.5}FCl_{0.5}Br_{0.5}$ Mixed Crystal ($Mg_{0.5}Sr_{0.5}FCl_{0.5}Br_{0.5}$ 혼합결정내에 도핑된 $Sm^{2+}$의 광학적 성질 및 영구적 홀생성)

  • 조현갑;장기완;김일곤;조은진;박성태;정용화;서효진
    • Proceedings of the Optical Society of Korea Conference
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    • 2002.07a
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    • pp.136-137
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    • 2002
  • 급속도로 발전하는 정보화사회는 정보저장 및 처리에 있어서 고밀도, 대용량의 정보저장 매체를 요구한다. 따라서 3 차원적인 정보저장을 위한 연구가 활발히 진행되고 있으며, 영구적 홀 생성을 이용한 정보의 저장 및 처리도 활발히 연구되고 있는 분야 중의 하나이다. 실질적으로 응용에 필요한 실온에서의 영구적 스펙트럼 홀 생성은 희토류 금속이 첨가된 유리나 결정에서 관측되고 있는데, 이는 대부분 +2가 형태로 주입된 희토류 금속의 광학적 성질을 이용하는 것이다. (중략)

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Synthesis and Luminescent Property Investigation of the $Mg_4GeO_2:Mn$ for LEDs

  • Lee, Seung-Jae;Park, Joung-Kyu;Kim, Kyung-Nam;Bae, Pan-Kee;Kim, Chang-Hae;Chang, Hyun-Ju;Kim, Yong-Rok
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1526-1528
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    • 2007
  • In this report, Manganese doped magnesium germanate ($Mg_4GeO_2:Mn$) phosphor has been synthesized by the solid state method. Also, this phosphor was prepared by simple process under an air atmosphere for oxidation of Mn. The prepared phosphor shows a main luminescent peak at 661nm. Therefore, this phosphor is possible to be applicable to white LED lamp by GaN or InGaN chips.

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Nonlinear Properties of ZnO Varistors Doped with Rare earth Oxides (희토류 산화물이 첨가된 ZnO 바리스터의 비직선 특성)

  • Park, Jong-Ah;Lee, Hong-Hee;Kim, Myung-Jun;Ryu, Jung-Sun;Nahm, Choon-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.747-750
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    • 2003
  • The microstructure and nonlinear properties of ZPCMR-based varistors were investigated with various additives. The density of varistors were gradually decreased for the same R in order of NiO, MgO, and $Cr_2O_3$, respectively. The ZPCR-based varistors were not affected by NiO and MgO additives in nonlinear properties, whereas greatly affected by $Cr_2O_3$. Among the ZPCCR-based varistors, ZPCCD varistor exhibited the highest nonlinear properties, in which the nonlinear exponent is in the range of $40.5{\sim}67.4$ and the leakage current is in the range of $1.2{\sim}2.7{\mu}A$.

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Mechanism of Energy Transfer and Improvement Moist Stability of BaMg$Al_{10}O_{17}$:$Eu^{2+}$, $Mn^{2+}$ Phosphor

  • Liu, Ru-Shi;Ke, Wei-Chih
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.235-238
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    • 2009
  • BaMg$Al_{10}O_{17}$ (BAM) co-doped with $Eu^{2+}$ and $Mn^{2+}$ was synthesized in a solid-state reaction and their luminescence properties were investigated as functions of the concentrations of the sensitizer and activator. BAM:$Eu^{2+}$ had a broad blue emission band at 450 nm and BAM:$Mn^{2+}$ exhibited green emission at 514 nm. The energy transfer from $Eu^{2+}$ to $Mn^{2+}$ was mainly of the resonance-type via an electric dipole-quadrupole interaction. Additionally, the addition of various fluxes such as $AlF_3$ and $BaF_2$ in the synthesis improves the moist and thermal stability. This is particularly important for the phosphor in white light emitting diodes (LEDs).

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SINGLE CRYSTAL GROWTH OF OPTIC-GRADE LiNbO3 USING A FLOATING ZONE TECHNIQUE

  • Han, Ji-Woong;Kyung Joo;Shin, Kwang-Bo;Auh, Keun-Ho
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.09a
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    • pp.43-46
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    • 1998
  • The effect of dopant and stoichiometry on the optical properties of LiNbO3 were studies. We prepared three samples, which are undoped, MgO doped LiNbO3 and near-stoichiometric LiNbO3 dielectric constant and transmittance in UV/VIS/IR light range were measured. The results showed that the features for high [Li]/[Nb] were similar to those for low [Li]/[Nb] but with high [Mg].

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A novel urine-activated microbattery

  • Jin, Bo;Gu, Hal-Bon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.396-397
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    • 2006
  • The novel urine-activated microbatteries have been successfully demonstrated. In this microbattery, a magnesium (Mg) layer and copper chloride (CuCl) in the filter paper are used as the anode and the cathode, respectively. A stack consisting of a Mg layer, CuCl-doped filter paper and a copper (Cu) layer sandwiched between two plastic layers is hot-pressed into the microbatteries at $100^{\circ}C$. The microbatteries can be activated by adding a droplet of human urine. The experimental results show that the microbattery can deliver a maximum voltage of 1.4 V and maximum power of 1.96 mW for the $1\;k{\Omega}$ load resistor.

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Preparation and Dissolution Properties of the Trace Elements doped ${K_2}O$-CaO-${P_2}{O_5}$ Glasses (미량원소함유 ${K_2}O$-CaO-${P_2}{O_5}$유리의 제조 및 용출 특성)

  • Lee, Hoi-Kwan;Kang, Won-Ho
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.6 no.2
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    • pp.144-148
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    • 2005
  • At the previous papers, we showed that ${K_2}O$-CaO-${P_2}{O_5}$ glasses had a solubility in air so that they could be used for glass fertilizer. In this work, we fabricated the Eco-glass fertilizer containing trace elements of B, Mg, Zn, Fe, Cu, Co, Mo, the needed micronutrients for plants to grow, by a melt-quenching process. The dissolution properties in these glasses were investigated with a pH meter and an ICP analyzer. The trace elements doped glasses showed similar behavior in dissolutions and stability properties with the mother glass without containing trace elements. In addition, the dissolution amount of each trace elements depends on the mother glass composition and the quantity of each trace elements, which determine the dissolving velocity of chemical elements.

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Study on Thermoelectric Properties of Cu Doping of Pulse-Electrodeposited n-type Bi2(Te-Se)3 Thin Films (펄스 전기도금법에 의해 제조된 n형 Bi2(Te-Se)3 박막의 Cu 도핑에 따른 열전특성에 관한 연구)

  • Heo, Na-Ri;Kim, Kwang-Ho;Lim, Jae-Hong
    • Journal of the Korean institute of surface engineering
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    • v.49 no.1
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    • pp.40-45
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    • 2016
  • Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

Synthesis of Semiconducting $KTaO_3$ Thin films

  • Bae, Hyung-Jin;Ku, Jayl;Ahn, Tae-Won;Lee, Won-Seok
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.1265-1268
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    • 2005
  • In this study, the synthesis and semiconducting properties of cation and defect-doped $KTaO_3$ film is reported. $KTaO_3$ is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. While numerous studies have investigated the thin-film growth of semiconducting perovskites, little is reported about semiconducting $KTaO_3$ thin films. In this work, the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the $KTaO_3$ lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting $KTaO_3:Ca$ films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were $0.27cm^2/Vs$ and $3.21018cm^{-3}$, respectively. Crystallinity and microstructure of the $KTaO_3:Ca$ films were examined using X-ray diffraction and field-emission scanning microscopy.

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