• Progress in Superconductivity
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• v.14 no.1
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• pp.34-38
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• 2012

The effect of graphene inclusion in the ex-situ $MgB_2$ was analyzed with the help of resistivity behavior and critical current density studies. Amount of graphene was systematically varied from 0% for pristine sample to 3% by the weight of $MgB_2$. Graphene that is considered as a good source of carbon was found to be intact without any significant carbon doping in $MgB_2$ structure as reveled by XRD measurements. There was no signature of graphene inclusion as far as the superconducting transition is concerned which remained same at 39 K for all the samples. The transition width being sensitive to defect doping remained more or less about 2 K for all the samples showing no variation due to doping. Although there was no change in the superconducting transition or transition width, the graphene doped sample showed noticeable decrease in the overall resistivity behavior with respect to decrease in temperature. The graphene inclusion acted as effective pinning centers which have enhanced the upper critical field of these samples.

• Environmental Engineering Research
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• v.23 no.2
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• pp.181-188
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• 2018

Photocatalytic oxidation in the presence of Fe-doped, Zn-doped or Fe-Zn co-doped $TiO_2$ was used to effectively decompose humic acids (HAs) in water. The highest HAs removal efficiency (65.7%) was achieved in the presence of $500^{\circ}C$ calcined 0.0010% Fe-Zn co-doped $TiO_2$ with the Fe:Zn ratio of 3:2. The initial solution pH value, inorganic cations and anions also affected the catalyst photocatalytic ability. The HAs removal for the initial pH of 2 was the highest, and for the pH of 6 was the lowest. The photocatalytic oxidation of HAs was enhanced with the increase of the $Ca^{2+}$ or $Mg^{2+}$ concentration, and reduced when concentrations of some anions increased. The inhibition order of the anions on $TiO_2$ photocatalytic activities was $CO{_3}^{2-}$ > $HCO_3{^-}$ > $Cl^-$, but a slightly promotion was achieved when $SO{_4}^{2-}$ was added. Total organic carbon (TOC) removal was used to evaluate the actual HAs mineralization degree caused by the $500^{\circ}C$ calcined 0.0010% Fe-Zn (3:2) co-doped $TiO_2$. For tap water added with HAs, the $UV_{254}$ and TOC removal rates were 57.2% and 49.9%, respectively. The $UV_{254}$ removal efficiency was higher than that of TOC because of the generation of intermediates that could significantly reduce the $UV_{254}$, but not the TOC.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.574-579
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• 1999

A counter-flow type horizontal reactor of metal organic chemical vapor deposition was designed with the Reynolds and the Rayleigh numbers of Re = 4.5 and Ra = 215.8, respectively. The GaN thin films were grown and characterized by Hall measurement, double crystal X-ray diffraction analysis and photoluminescence measurement. The Si and Mg were also used for doping of GaN films. The dislocation density of $2.6{\times}10^8/\textrm {cm}^2$ was included in GaN films representing the geometrical lattice mismatch between sapphire substrates and GaN films. The Si doped n-GaN films provide the electron carrier density and mobility in the regions of $10^{17}~10^{18}/\textrm{cm}^3$ and 200~400 $\textrm{cm}^2$/V .sec, respectively. Mg doped p-GaN films were post-annealed and activated with the hole carrier density of $8{\times}10^{17}/{\textrm}{cm}^3$.

• Current Photovoltaic Research
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• v.4 no.4
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• pp.150-154
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• 2016

Mg and In co-doped ZnO (MIZO) thin films with transparent conducting characteristics were successfully prepared on glass substrates by RF magnetron sputtering technique. The Influence of different substrate temperature (from RT to $400^{\circ}C$) on the structural, morphological, electrical, and optical properties of MIZO thin films were investigated. The MIZO thin film prepared at the substrate temperature of $350^{\circ}C$ showed the best electrical characteristics in terms of the carrier concentration ($4.24{\times}10^{20}cm^{-3}$), charge carrier mobility ($5.01cm^2V^{-1}S^{-1}$), and a minimum resistivity ($1.24{\times}10^{-4}{\Omega}{\cdot}cm$). The average transmission of MIZO thin films in the visible range was over 80% and the absorption edges of MIZO thin films were very sharp. The bandgap energy of MIZO thin films becomes wider from 3.44 eV to 3.6 eV as the substrate temperature increased from RT to $350^{\circ}C$. However, Band gap energy of MIZO thin film was narrow at substrate temperature of $400^{\circ}C$.

• Journal of Information Display
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• v.2 no.3
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• pp.13-17
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• 2001

The manganese-doped magnesium tin oxide with spinel structure was selected as a green phosphor for FED application and was synthesized by the solid state reaction. Its luminescence properties were investigated under low-voltage electron excitation. The $Mg_2SnO_4$:Mn phosphor showed green emission with the spectrum centered at 500 nm due to energy transfer from $^4T_1$ to $^6A_1$ of $Mn^{2+}$ ion. Optimum Mn concentration was 0.6 mole % and the decay time was shorter than 10 ms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.173-173
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• 2009

높은 휘도를 갖는 $Eu^{2+}$가 도핑된 $Sr_3MgSi_2O_8$ 형광체는 고상반응법을 사용하여 합성하였다. 몰 비에 따른 조성을 정밀전자저울을 사용 무게를 칭량하여 에탄올을 용매로 하여 혼합, 건조 후 하소 온도는 $1000^{\circ}C$, 합성 온도는 $1200^{\circ}C$에서 $1400^{\circ}C$까지 $H_2$ 5% Ar 95% 환원분위기에서 소성 온도 별 결정상을 관찰하였고, 그 형태에 따라서는 Powder상태일 때와 Powder를 Press하여 bulk상태로써의 결정상의 변화를 연구하였다. 그 결과 분말상태와 성형을 가한 pellet의 두 가지 형태로 합성하여 비교한 결과 성형공정을 거친 시료의 경우가 분말 상태일 때 보다 좋지 못한 결정상이 관찰되었다. $Sr_3MgSi_2O_8$의 미세구조는 SEM으로 관찰하였다.

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.92-92
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• 2009

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.620-626
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• 1996

$LiNbO_{3}$ single crystals were grown using a self-designed radio-frequency heating Czochralski crystal grower. Congruently melting composition was used and the optimum growth conditions were established. The compensated power control method was very effective to control the outer diameter of the crystal ingots within ${\pm}5\;%$. Scanning electron microscopy was performed to characterize the effect of the $Mg^{2+}$ ions on the formation of the ferroelectric domain in $LiNbO_{3}$.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.667-671
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• 1998

The photoluminescence (pL) characteristics of hydride vapor phase epiyaxy (HVPE) grown GaN films on $MgAl_{2}O_{4}$ substrate were investigated with several growth conditions. The GaN films on $MgAl_{2}O_{4}$ substrate is autodoped with Mg atoms which thermally out-diffused from substrate lead to a PL characteristics of impurity doped ones. The Mg-related emission band intensity decreased with growth temperature may due to the evaporation of Mg atoms at the GaN film surfaces. and it also decreased with GaN film thicknesses. We can estimate the diffusion coefficient of Mg atoms in GaN under the consideration of diffusion phenomena between two infinite solids lead to a value of D= 2$\times$$lO^{-10}\textrm{cm}^2/sec.

• Carbon letters
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• v.28
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• pp.116-120
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• 2018

Nitrogen-doped carbons have attracted much attention due to their novel application in relation to gas storage. In this study, nitrogen-doped porous carbons were synthesized using SBA-15 as a template, polypyrrole as the carbon and nitrogen precursor, and KOH as an activating agent. The effect of the activation temperature ($600-850^{\circ}C$) on the $CO_2$ adsorption capacity of the obtained porous carbons was studied. Characterization of the resulting carbons showed that they were micro-/meso-porous carbon materials with a well-developed pore structure that varied with the activation temperature. The highest surface area of $1488m^2g^{-1}$ was achieved at an activation temperature of $800^{\circ}C$ (AC-800). The nitrogen content of the activated carbon decreased from 4.74 to 1.39 wt% with an increase in the activation temperature from 600 to $850^{\circ}C$. This shows that nitrogen is oxidized and more easily removed than carbon during the activation process, which indicates that C-N bonds are more easily ruptured at higher temperatures. Furthermore, $CO_2$ adsorption isotherms showed that AC-800 exhibited the best $CO_2$ adsorption capacity of $110mg\;g^{-1}$ at 298 K and 1 bar.