• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.144-149
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• 2000

Variables affecting the passivation capability of Cu(Mg) alloy films, which were sputter deposited from a Cu (4.5 at. %) target, have been investigated. The results show that the passivation capability of a Cu(Mg) alloy film is a function of annealing temperature, $O_2$ pressure, and Mg content in the film. Increasing the annealing temperature up to $500^{\circ}C$ favors formation of a dense MgO layer on the surface which has a growth limited thickness of 150 $\AA$. Decreasing the $O_2$ pressure enhances the preferential oxidation of Mg over Cu. Furthermore, increasing the Mg content in the Cu(Mg) film promotes formation of a dense MgO layer. Vacuum pre-annealing was found to be very effective in segregating Mg to the surface, facilitating the passivation capability of the Cu(Mg) alloy film even when the Mg content is low. In the current study, self-aligned MgO layers with low resistivity and an effective passivation capability over the Cu surface, have been obtained by manipulating these factors when Cu(Mg) thin films are annealed.

• Applied Microscopy
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• v.26 no.2
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• pp.235-241
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• 1996

Amophization and decomposition behaviour in $Mg_{62}Cu_{26}Y_{12}$ alloy prepared by melt spinning method and wedge type metal mold casting method have been investigated by a detailed transmission electron microscopy. Amorphous phase has formed in melt-spun ribbon. In the case of the wedge type specimen, however, the amorphous phase has formed only around the tip area within about 2 mm thickness. The remaining part of the wedge type specimen consists of crystalline phases, $Mg_{2}Cu\;and\;Cu_{2}Y$. The supercooling for crystallization behaviour of the amorphous $Mg_{62}Cu_{26}Y_{12}$ alloy, ${\Delta}T_x$ has been measured to be about 60 K. Such a large undercooling of the crystallization bahaviour enables formation of the amorphous phase in the $Mg_{62}Cu_{26}Y_{12}$ alloy under the cooling rate of $10^{2}K/s$. The amorphous $Mg_{62}Cu_{26}Y_{12}$ has decomposed into crystalline phases, $Mg_{2}Cu\;and\;Cu_{2}Y$ after heat treatment at $170^{\circ}C\;and\;250^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.5
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• pp.243-249
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• 2007

The age hardening behavior and mechanical properties of an extruded Al-Zn-Mg-(Cu)-0.1 wt.%Sc alloy were investigated with the Sc addition and ageing temperature. The results showed that the $Al_3Sc$ compounds were formed by Sc addition and distributed preferentially along the extrusion direction. The age hardening of Al-Zn-Mg-Cu-0.1 wt.%Sc alloy which was treated by T6 process was more significant than that of Al-Zn-Mg-0.1 wt.%Sc alloy. The tensile property of Al-Zn-Mg-Cu+0.1 wt.%Sc alloy was also higher than that of Al-Zn-Mg-0.1 wt.%Sc alloy, which is 691 MPa and 584 MPa in strength and 9% and 11% in elongation, respectively.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.5
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• pp.257-261
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• 2006

Scandium(Sc) in Al-Zn-Mg-Cu based Al alloy on precipitation phenomenon was compared to a 7001(Al-7.2%Zn-3.2%Mg-1.8%Cu) Al alloy. GP zone and ${\eta}^{\prime}$ phases were the main strengthening phases at low aging temperature under $100^{\circ}C$, but ${\eta}^{\prime}$ and $Al_3Sc$ phases were the main strengthening phases at high aging temperature above $1600^{\circ}C$ in Sc added 7000(Al-7.7%Zn-2.0%Mg-1.9%Cu-0.1%Zr) Al alloy. With the addition of 0.1%Sc in 7000 Al alloy, the activation energy for the GP zone, ${\eta}^{\prime}$ and ${\eta}$ phase decreased compared to the 7001 Al alloy. This result indicates that the Sc accelerated the precipitation for the GP zone, ${\eta}^{\prime}$ and ${\eta}$ phases in 7000 Al alloy. Al-7.7%Zn-2.0%Mg-1.9%Cu-0.1%Zr-0.1 Sc alloy has higher strength than 7001 Al alloy, which has high strength.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.97-97
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• 2017

This study investigated the corrosion protection by electrodeposited copper layer on AZ31 Mg alloy with and without additional silver layer by immersion test, salt spray test, OCP transient and potentiodynamic polarization experiment. The single electrodeposited Cu layer on AZ31 Mg alloy showed a nodular structure with many imperfections of crevices between the nodules, which resulted in the fast initiation of pitting corrosion within first few hours of immersion. Double-layer coating of Cu and outer Ag layer slightly increased the initiation time for pitting corrosion. Triple-layer coatings of Cu/Ag/Cu exhibited the most efficient corrosion protection of AZ31 Mg alloy, compared to the single- and double-layer coatings. Surface morphology of the outer Cu layer in the triple-layer was changed from the nodular structure to fine particle structure with no crevices due to the presence of an additional Ag layer. Thus, the improved corrosion resistance of AZ31 Mg alloy by electrodeposited Cu/Ag or Cu/Ag/Cu layers is readily ascribed to the decreased number of imperfections in the electrodeposited layers due to the additional silver layer. It is concluded that the additional silver layer provides many nucleation sites for the second Cu plating, resulting in the formation of finer and denser structure than the first Cu electrodeposit.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.46-51
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• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.160-165
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• 2000

We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.

• Journal of Korea Foundry Society
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• v.29 no.6
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• pp.265-269
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• 2009

The optimum RRA heat treating conditions and SCC (stress corrosion cracking) resistance of semi-solid Al-Zn-Mg-Cu alloy fabricated by inclined cooling plate were compared with those of conventional mould cast alloys. The non-stirring method characterized by using a cooling plate can effectively eliminate dendritic structure and form a fine globular semisolid microstructure in as-cast Al-Zn-Mg-Cu alloy and the SCC resistance of semi-solid Al-Zn-Mg-Cu alloy was higher than that of conventional mold cast alloy. Also, after retrogressed treatment at RRA heat treatment of semi-solid Al-Zn-Mg-Cu alloy, retrogressed treatment time has increased more than 10 minutes at $180^{\circ}C$ to recovery the T6 heat treatment strength.

• Journal of Powder Materials
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• v.7 no.1
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• pp.12-18
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• 2000

Effects of the microstrucrure of rapidy solidified Al-Pb-Cu-Mg alloys on the wear investigated. In order to overcome the miscility gap between Al and pb under equilibrium conditions, both in the solid and the liquid states, the alloy were rapidy solidifies to produce them in a segregation-free condition. Although the Pb particles showed relatively fine dispersion in the Al matrix in all the alloys by this process. the Al-16Pb alloy was found to have the most favorable microstructure with discretre with discrete Pb particles of abount 0.5 ${\mu}$m in size. With the addition of Cu and Cu-Mg to Al-16Pb, cellular structures were newly formed; not seen in the binary Al-Pb alloy. Wear properties of the Al-Pb binary alloys measured as a function of the sliding speen, sliding distance, and applied load showed that the Al-16Pb alloy has the best wear resistance, as expected from the fine microstructural features in this alloy. The were resistance of the alloy containing Cu-and Cu-Mg was higher than that of the Al-16Pvb alloy, due to matrix strengthening by precipitation hardeing. The wear mechanism was identified by examining the traces and wear debris.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.234-240
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• 2001

The diffusion barrier properties of TiN by using Cu(Mg) alloy film have been investigated. Cu(Mg) alloy film was deposited on air-exposed TiN film. Upon annealing, interfacial MgO of 100 $\AA$ has been formed due to the reaction of Mg with oxygen existed on the surface of TiN. Combined MgO/TiN structure prevented the interdiffusion of Cu and Si up to $800^{\circ}C$. To improve the adhesion of Cu(Mg) alloy film to the TiN, TiN layer was treated by $O_2$ plasma, followed by vacuum annealing at $300^{\circ}C$. It was found that increased oxygen on the surface of TiN film by plasma treatment enhanced segregation of Mg toward the interface, resulting in the formation of dense MgO layer. Improved adhesion characteristics have been formed through this treatment. However, increased power of $O_2$ plasma led to the formation of TiO$_2$ and decreased the Mg content to be segregated to the interface, resulting in the decrease in adhesion property. In addition, the deposition of 50 ${\AA}$ Si on the TiN enhanced the adhesion of Cu(Mg) alloy to TiN without deteriorating the TiN diffusion barrier characteristics.