• 제목/요약/키워드: Mg and In co-doping

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Effect of Al Doping Concentration on Resistance Switching Behavior of Sputtered Al-doped MgOx Films

  • 이규민;김종기;박성훈;손현철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.307-307
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    • 2012
  • In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

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In 코도핑 된 p-GaN의 광학적 특성 (In Co-Doping Effect on the Optical Properties of P-Type GaN Epilayers)

  • 안명환;정호용;정상조
    • 한국재료학회지
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    • 제18권8호
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    • pp.450-453
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    • 2008
  • Mg-doped and In-Mg co-doped p-type GaN epilayers were grown in a low-pressure metal organic chemical vapor deposition technique. The effect of In doping on the p-GaN layer was studied through photoluminescence (PL), persistent photoconductivity (PPC), and transmission electron microscopy (TEM) at room temperature. For the In-doped p-GaN layer, the PL intensity increases significantly and the peak position shifts to 3.2 eV from 2.95 eV of conventional p-GaN. Additionally, In doping greatly reduces the PPC, which was very strong in conventional p-GaN. A reduction in the dislocation density is also evidenced upon In doping in p-GaN according to TEM images. The improved optical properties of the In-doped p-GaN layer are attributed to the high crystalline quality and to the active participation of incorporated Mg atoms.

CO Gas-Sensor Based on Pt-Functionalized Mg-Doped ZnO Nanowires

  • Jin, Chang-Hyun;Park, Sung-Hoon;Kim, Hyun-Su;An, So-Yeon;Lee, Chong-Mu
    • Bulletin of the Korean Chemical Society
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    • 제33권6호
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    • pp.1993-1997
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    • 2012
  • Mg-doped ZnO one-dimensional (1D) nanostrutures were synthesized by using a thermal evaporation technique. The morphology, crystal structure, and sensing properties of the Mg-doped ZnO nanostructures functionalized with Pt to CO gas at $100^{\circ}C$ were examined. The diameters of the 1D nanostructures ranged from 80 to 120 nm and that the lengths were up to a few tens of micrometers. The gas sensors fabricated from multiple networked Mg-doped ZnO nanowires functionalized with Pt showed enhanced electrical response to CO gas. The responses of the nanowires were improved by approximately 70, 69, 111, and 81 times at CO concentrations of 10, 25, 50, and 100 ppm, respectively. Both the response and recovery times of the nanowire sensor for CO gas sensing were not nearly changed by Pt functionalization. It also appeared that the Mg doping concentration did not influence the sensing properties of ZnO nanowires as strongly as Pt-functionalization. In addition, the mechanism for the enhancement in the CO gas sensing properties of Mg-doped ZnO nanowires by Pt functionalization is discussed.

Effect of $Mg^{2+}$ co-doping on luminescent properties of $ZnGa_2O_4:Mn^{2+}$

  • Singh, Binod Kumar;Bartwal, Kunwar Singh;Ryu, Ho-Jin
    • 반도체디스플레이기술학회지
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    • 제6권4호
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    • pp.29-32
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    • 2007
  • Zinc gallate, $ZnGa_2O_4:Mn^{2+}$ co-doped with different concentrations of $Mg^{2+}$ (0.001- 0.5 mol%) was prepared by solid state synthesis method. These compositions were investigated for their photoluminescence and cathodoluminescence properties. The optimized composition $Zn_{0.990}Mg_{0.005}Ga_2O_4:Mn_{0.005}$ shows higher luminescence intensity compared to the parent phosphor. The intense green emission peak was found at 504 nm. The $Mg^{2+}$ doping does not affect much the decay time. It remains <10 ms for these compositions which make them potential candidate for application in TV screens.

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Doping Effects of Mg and/or Fe ions on Congruent $LiNbO_3$ Single Crystal Growth

  • Bae, So-Ik;J. Ichikawa;K. Shimamura;H. Onodera;T. Fukuda
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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    • pp.139-143
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    • 1997
  • The doping effects of Mg and/or Fe ions on congruent LiNbO$_3$ single crystal growth were studied in order to clarify the roles of MgO in Fe doped LiNbO$_3$ single crystals. The effective distribution coefficienct of Fe was found decreased drastically from 0.85 to 0.5 by the addition of MgO into the LiNbO$_3$ melt. M ssbauer spectra revealed that the addition of MgO reduces the occurrence of Fe2+ ions during growth in air. Therefore, it is likely that there would be two important roles of MgO in Fe doped LiNbO$_3$. One is to suppress the incorporation of all Fe ions, and the other is to reduce the concentration of Fe2+ ions among the total Fe ions.

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$Zn_{2-x-y}SiO_4:Mn_x,\;M_y$계 형광체의 발광특성 (Photoluminescence Properties of $Zn_{2-x-y}SiO_4:Mn_x,\;M_y$ Phosphors)

  • 조봉현;손기선;박희동;장현주;황택성
    • 대한화학회지
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    • 제43권2호
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    • pp.206-212
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    • 1999
  • 본 연구의 목적은 기존의 $Zn_2SiO_4:Mn$형광체에 새로운 co-dopant를 첨가하여 발광특성을 향상시키는 것이다. co-dopant로서 선정한 Mg와 Cr이온들은 Zn자리를 치환하는 것으로 알려져 있으며 실제로 co-doping 시 각각 발광휘도와 decay time을 개선시키는 효과를 거두었다. $Zn_2SiO_4:Mn$에 Mg와 Cr이온들이 co-doping될 시에는 lattice 및 $Mn^{2+}$의 에너지 준위를 변화시키는 것으로 추정되어 발광휘도 및 decay time의 변화를 일으키는 것으로 해석된다. 특히 이 원소들은 발광과정에 긍정정인 영향을 끼쳐 Mg는 발광휘도를 중가시키고 Cr은 decay time을 감소시키는 결과를 얻었다. $Zn_2SiO_4:Mn,\;Mg$ 형광체의 발광휘도 개선은 DV-X${\alpha}$ embedded cluster 계산방법으로 설명할 수 있었고 반면에 $Zn_2SiO_4:Mn,\;Cr$ 형광체가 decay time을 줄이는 원인은 Mn이온과 Cr이온사이에 energy transfer가 일어나 발생되는 것으로 추정된다.

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리튬 2차 전지용 LiCo1-XMgxO2(x=0.03)의 결정구조, 전기전도도 및 전기화학적 특성 (Crystal Structures, Electrical Conductivities and Electrochemical Properties of LiCo1-XMgxO2(x=0.03) for Secondary Lithium Ion Batteries)

  • 김호진;정우창;정연욱;이준형;김정주
    • 한국세라믹학회지
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    • 제42권9호
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    • pp.602-606
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    • 2005
  • [ $LiCoO_{2}$ ] is the most common cathode electrode materials in Lithium-ion batteries. $LiCo_{0.97}Mg_{0.03}O_2$ was synthesized by the solid-state reaction method. We investigated crystal structures, electrical conductivities and electrochemical properties. The crystal structure of $LiCo_{0.97}Mg_{0.03}O_2$ was analyzed by X-ray powder diffraction and Rietveld refinement. The material showed a single phase of a layered structure with the space group R-3m. The lattice parameter(a, c) of $LiCo_{0.97}Mg_{0.03}O_2$ was larger than that of $LiCoO_2$. The electrical conductivity of sintered samples was measured by the Van der Pauw method. The electrical conductivities of $LiCoO_2$ and $LiCo_{0.97}Mg_{0.03}O_2$ were $2.11{\times}10^{-4}\;S/cm$ and $2.41{\times}10^{-1}\;S/cm$ at room temperature, respectively. On the basis of the Hall effect analysis, the increase in electrical conductivities of $LiCo_{0.97}Mg_{0.03}O_2$ is believed due to the increased carrier concentrations, while the carrier mobility was almost invariant. The electrochemical performance was investigated by coin cell test. $LiCo_{0.97}Mg_{0.03}O_2$ showed improved cycling performance as compared with $LiCoO_2$.

O2 분위기에서 p-GaN 층의 Mg 활성화가 GaN계 녹색 발광소자에 미치는 전류-전압특성 (The Influence of the Mg-doped p-GaN Layer Activated in the O2 Ambient on the Current-Voltage Characteristics of the GaN-Based Green LEDs)

  • 윤창주;배성준
    • 한국전기전자재료학회논문지
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    • 제15권5호
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    • pp.441-448
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    • 2002
  • The electrical properties of the GaN-based green light emitting diodes(LEDs) with the Mg-doped p-GaN layer activated in $N_2$ or $O_2$ ambient have been compared. For the $N_2$ -ambient activation the current-voltage behavior of LEDs has been found to be improved when the Mg dopants activation was performed in the higher temperature. However, for the $O_2$-ambient activation the current-voltage characteristic has been observed to be enhanced when the Mg dopants activation was carried out in the lower temperature. The minimum forward voltage at 20mA was obtained to be 4.8 V for LEDs with the p-GaN layer activated at $900^{\circ}C$ in the $N_2$ ambient and 4.5V for LEDs with the p-GaN layer treated at $700^{\circ}C$ in the $O_2$ambient, repectively. The forward voltage reduction of the LEDs treated in the $O_2$-ambient may be related to the oxygen co-doping of the p-GaN layer during the activation process. The $O_2$ -ambient activation process is useful for the enhancement of the LED performance as well as the fabrication process since this process can activate the Mg dopants in the low temperature.

Influence of Nitrogen moieties on CO2 capture of Carbon Aerogel

  • Jeon, Da-Hee;Min, Byung-Gak;Oh, Jong Gab;Nah, Changwoon;Park, Soo-Jin
    • Carbon letters
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    • 제16권1호
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    • pp.57-61
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    • 2015
  • Carbon aerogel is a porous carbon material possessing high porosity and high specific surface area. Nitrogen doping reduced the specific surface area and micropores, but it furnished basic sites to improve the $CO_2$ selectivity. In this work, N-doped carbon aerogels were prepared with different ratios of resorcinol/melamine by using the sol-gel method. The morphological properties were characterized by scanning electron microscopy (SEM). Nitrogen content was studied by X-ray photoelectron spectroscopy (XPS) and the specific surface area and micropore volume were analyzed by $N_2$ adsorption-desorption isotherms at 77 K. The $CO_2$ adsorption capacity was investigated by $CO_2$ adsorption-desorption isotherms at 298 K and 1 bar. Melamine containing N-doped CAs showed a high nitrogen content (5.54 wt.%). The prepared N-doped CAs exhibited a high $CO_2$ capture capacity of 118.77 mg/g (at resorcinol/melamine = 1:0.3). Therefore, we confirmed that the $CO_2$ adsorption capacity was strongly affected by the nitrogen moieties.