• Clean Technology
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• v.25 no.2
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• pp.107-113
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• 2019

Numerical model that considered the shrinking core model and elutriation and degradation of particles was developed to predict selective chlorination of ilmenite and carbo-chlorination of $TiO_2$ in a two stage fluidized bed chlorination furnace. It is possible to analyze the fluidized bed chlorination reaction to be able to reflect particle distribution for mass balances and the chlorination reaction. The numerical model showed an accuracy with error less than 6% compared with fluidized bed experiments. The chlorination degree with particle size change was greater with a smaller particle size, and there was a 100 min difference to obtain a chlorination degree of 1 between $75{\mu}m$ and $275{\mu}m$. This was not shown to such a great extent with variation of temperature ($800{\sim}1000^{\circ}C$), and there was only a 10 min difference to obtain a chlorination degree of 0.9. In the first selective chlorination process, the mass reduction rate approached to the theoretical value of 0.4735 after 180 min, and chlorination changed the Fe component into $FeCl_2$ or $FeCl_3$ and showed nearly 1. In the second carbo-chlorination process, the chlorination degree of $TiO_2$ approached 0.98 and the mass fraction reached 0.02 with conversion into $TiCl_4$. In the first selective chlorination process, 98% of $TiO_2$ was produced at 180 min, and this was changed into 99% of $TiCl_4$ after an additional 90 min. Also the mass reduction rate of $TiO_2$ was reduced to 99% in the second continuous carbo-chlorination process.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.1
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• pp.22-29
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• 2000

This paper deals with the dielectric characteristics of $SF_6$ gas gap stressed by $\pm$1.2/44[$mutextrm{s}$] non-oscillating impulse and $\pm$0.4[$mutextrm{s}$]/1.14[MHz] oscillating impulse voltages in the presence of a needle-shape metallic particle in gas-insulated switchgear(GIS). Breakdown voltage-time (V-t) and breakdown voltage-gas pressure (V-p) characteristics were investigated and discussed. The experiments were carried out under highly inhomogeneous field geometry with a needle protrusion whose length and radius are 10[mm] and 0.5[mm], respectively. The gas pressure ranges from 0.1 to 0.5[㎫]. As a result, it was found that the electrical breakdown for both the positive and negative polarity develops with steplike pulses in leader mechanism, When subjected to the positive oscillating impulse voltage, the minimum breakdown voltages appeared in all the gas pressure ranges and the V-t curves have a pronounced upturning at short times to breakdown and give a little dependence of the gas pressure. On the other hand, in the case of the negative polarity the dependence of the V-t and V-p characteristics on the wave shape of the applied voltages is known to be appreciable.

• Particle and aerosol research
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• v.13 no.2
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• pp.79-85
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• 2017

This study identified the loss of minimum fluidization velocity and pressure in accordance with the superficial velocity of $NiO/MoO_3/MoS_2$, a rare metallic oxide and high value-added material in the lab-scale fluidized bed reactor (L=0.25 m, D=0.05 m). The average pressure loss in L/D 1, 2, and 3 of $NiO/MoO_3/MoS_2$ within the scope of superficial gas velocity between 0.07 and 0.45 m/s based on the L/D 1, 2, and 3 of the specimen was shown to be 290~1952 Pa at decreasing flux and 253~1925 Pa at increasing flux. The comparison between the theoretical value proposed by Wen and the test data showed a difference between 0.021~0.36 magnification. Based on these results, this study was able to determine the operation conditions where rare metallic oxides could be applied in real phenomena.

• Particle and aerosol research
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• v.19 no.3
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• pp.53-62
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• 2023

This study compared the collection efficiency of a two-stage electrostatic precipitator (ESP) with a lightweight PET film-coated carbon electrode collector plate, depending on the relative humidity of the exhaust gas and the applied voltage to the pre-charger. It was confirmed that the onset voltage at which corona discharge occurs decreases and the discharge current decreases at the same voltage as the relative humidity increases. On the other hand, even though there was almost no change in the diameter of the particles generated depending on the relative humidity, the efficiency was higher at the same voltage as the relative humidity increased. In addition, by applying a two-stage ESP structure, the collection efficiency was higher than that of a single-stage electrostatic precipitator under the same conditions. The ESP using the carbon electrode coated with PET film used in this study is expected to be effective in various aspects such as weight and in the current situation where environmental regulations are rapidly tightening.

• Journal of Environmental Health Sciences
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• v.36 no.2
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• pp.108-117
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• 2010

In this study, ambient particulate matter ($PM_{2.5}$ and $PM_{10}$) levels were measured and their chemical and physical properties were characterized. Two sites in Gwangju were sampled once a month from December 2008 to November 2009. The annual mean concentrations of $PM_{2.5}$ and $PM_{10}$ were $26.9\;{\mu}g/m^3$ and $46.3\;{\mu}g/m^3$, respectively, in Nongseongdong and $26.1\;{\mu}g/m^3$ and $44.8\;{\mu}g/m^3$, respectively, in Duam-dong. $PM_{2.5}$ levels were 1.8 times higher than the USA Environmental Protection Agency (EPA) national ambient air quality standard for $PM_{2.5}$ ($15\;{\mu}g/m^3$). The average $PM_{2.5}/PM_{10}$ ratio of 0.58 suggested that $PM_{2.5}$ is a significant component of the ambient particle pollution. The order of concentration of metallic elements in $PM_{2.5}$ and $PM_{10}$ was Si > Al > Fe > Zn > Pb > Cu > Mn. Cd was not detected. The earth crustal enrichment factors for Cr, Cu, Pb and Zn in $PM_{2.5}$ were higher than those in $PM_{10}$. When the earth crustal enrichment factors for Cr, Cu, Pb and Zn were higher than 10, this suggested influence from anthropogenic sources. The soil contribution ratios for $PM_{2.5}$ and $PM_{10}$ were 11.3% and 16.4%, respectively, and were higher in the fall and winter. Anions (${SO_4}^{-2}$, ${NO_3}^-$, and $Cl^-$) comprise 28.7% of $PM_{2.5}$ and 21.4% of $PM_{10}$. The correlation coefficient of Zn-Fe, Mn-Cu, Fe-Cu and Fe-Mn in $PM_{2.5}$ was high in the sampling sites, and metallic elements were primarily from anthropogenic sources such as fuel combustion and vehicle emissions.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.4
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• pp.423-428
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• 2010

Electrostatic precipitators (ESPs) used currently in industries for removing fine particles from semiconductors have to be made of expensive anticorrosive metallic materials in order to maintain their particle-removal performance. To satisfy the economical demands of industries, a novel ESP was developed; in this ESP, the charger is made of carbon fibers and collection plates consist of PET films among which an aluminum sheet is inserted. The ESP was evaluated by changing the voltages applied to the chargers and collection plates, flow rates, and number of charging channels. KCl particles with mean diameters of 100 nm were used, and a scanning mobility particle sizer was used to measure the changes in particle number concentrations upstream and downstream of the ESP. The experimental results showed that more than 90% of the particles were removed by using the ESP containing ionizers with nine channels and 65-mm collection plates at $500\;m^3/hr$ when voltages of 7 kV and 10 kV were applied to the ionizers and collection plates, respectively.

• Clean Technology
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• v.7 no.3
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• pp.215-223
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• 2001

A present semiconductor cleaning technology is based upon RCA cleaning technology which consumes vast amounts of chemicals and ultra pure water(UPW) and is the high temperature process. Therefore, this technology gives rise to the many environmental issues, and some alternatives such as electrolyzed water(EW) are being studied. In this work, intentionally contaminated Si wafers were cleaned using the electrolyzed water. The electrolyzed water was generated by an electrolysis system which consists of three anode, cathode, and middle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case of NH4Cl electrolyte, the oxidation-reduction potential and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.8, and -750mV and 10.0, respectively. AW and CW were deteriorated after electrolyzed, but maintained their characteristics for more than 40 minutes sufficiently enough for cleaning. Their deterioration was correlated with CO2 concentration changes dissolved from air. Contact angles of UPW, AW, and CW on DHF treated Si wafer surfaces were measured to be $65.9^{\circ}$, $66.5^{\circ}$ and $56.8^{\circ}$, respectively, which characterizes clearly the eletrolyzed water. To analyze the amount of metallic impurities on Si wafer surface, ICP-MS was introduced. It was known that AW was effective for Cu removal, while CW was more effective for Fe removal. To analyze the number of particles on Si wafer surfaces, Tencor 6220 were introduced. The particle distributions after various particle removal processes maintained the same pattern. In this work, RCA consumed about $9{\ell}$ chemicals, while EW did only $400m{\ell}$ HCl electrolyte or $600m{\ell}$ NH4Cl electrolyte. It was hence concluded that EW cleaning technology would be very effective for promoting environment, safety, and health(ESH) issues in the next generation semiconductor manufacturing.

• Korean Chemical Engineering Research
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• v.54 no.5
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• pp.659-664
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• 2016

In order to resolve the AAEM species migration routes and the interaction relationship between biochar structure and AAEM species during biomass pyrolysis, experiments were performed in an entrained flow reactor with $N_2$ at $500{\sim}900^{\circ}C$. ICP-AES, XPS and SEM-EDX were used to examine content and distribution of AAEM species and the physicochemical structures of biochar. The results show that at $500{\sim}700^{\circ}C$, the precipitation rate of AAEM species is relatively high. At high temperature (>$700^{\circ}C$), the AAEM species continue to migrate from interior to exterior, but little precipitation from biochar surface. And the migration of AAEM species is mainly realized by the C-O bond as the carrier medium. The AAEM species on biochar surface are mainly Na, Mg and Ca (<$700^{\circ}C$), while changing to K, Mg and Ca (${\geq}700^{\circ}C$). From $500^{\circ}C$ to $900^{\circ}C$, the biochar particle morphology gradually changes from fibers to porous structures, finally to molten particles. At $700{\sim}900^{\circ}C$, Ca element is obviously enriched on the molten edge of the biochar porous structures.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.251-257
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• 2001

A present semiconductor cleaning technology is based upon RCA cleaning, high temperature process which consumes vast chemicals and ultra Pure water(UPW). This technology gives rise to the many environmental issues, therefore some alternatives have been studied. In this study, intentionally contaminated Si wafers were cleaned using the electrolyzed water(EW). The EW was generated by an electrolysis equipment which was composed of anode. cathode, and toddle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case $NH_4$Cl electrolyte, the oxidation-reduction potential(ORP) and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.7, and -750mV and 9.8, respectively. For cleaning metallic impurities, AW was confirmed to be more effective than that of CW, and the particle distribution after various particle removal processes was shown to be same distribution.

• Journal of Powder Materials
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• v.21 no.6
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• pp.434-440
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• 2014

Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at $1500-1650^{\circ}C$ has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at $1500^{\circ}C$ obtains nearly stoichiometric composition, the composition of the SiC layer coated at $1300-1400^{\circ}C$ shows discrepancy from stoichiometric ratio(1:1). $3-7{\mu}m$ grain size of SiC layer coated at $1500^{\circ}C$ is decreased to sub-micrometer (< $1{\mu}m$) $-2{\mu}m$ grain size when coated at $1400^{\circ}C$, and further decreased to nano grain size when coated at $1300-1350^{\circ}C$. Moreover, the high density of SiC layer (${\geq}3.19g/cm^3$) which is easily obtained at $1500^{\circ}C$ coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.